Oxram Resistive Switching For Dr Improvement

• doi: 10.1109/ISCAS.2018.8351348
• title: OxRAM Resistive Switching for DR Improvement
• publisher: IEEE
• isbn: 978-1-5386-4882-7
• issn: 2379-447X
• rank: 3212
• access_type: LOCKED
• content_type: Conferences
• abstract: On-chip presence of emerging nonvolatile resistive memory devices provide opportunities to perform different types of computing and storage operations with several advantages. A unique application of oxide based resistive memory (OxRAM) devices in CMOS Image Sensors (CIS) for improvement of pixel dynamic range (DR) is proposed in this paper. In CIS, DR signifies the detectable range of light intensity. A modified 3T-APS (Active Pixel Sensor) circuit that incorporates OxRAM in 1T-1R configuration is proposed for DR improvement in case of low exposure situations. We show relative pixel DR improvement through OxRAM resistive switching during exposure and study the impact of different preconditioning states. Best case, simulated relative pixel DR improvement of ~34 dB was obtained for the proposed design. To study the system level impact of the proposed pixel a simplified behavioral model based simulation of an array with 580 × 950 pixels was performed.
• article_number: 8351348
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8351348
• html_url: https://ieeexplore.ieee.org/document/8351348/
• abstract_url: https://ieeexplore.ieee.org/document/8351348/
• publication_title: 2018 IEEE International Symposium on Circuits and Systems (ISCAS)
• conference_location: Florence, Italy
• conference_dates: 27-30 May 2018
• publication_number: 8334884
• is_number: 8350884
• publication_year: 2018
• publication_date: 27-30 May 2018
• start_page: 1
• end_page: 5
• citing_paper_count: 4
• citing_patent_count: 0
• download_count: 360
• insert_date: 20180504
• index_terms:
  • ieee_terms:
    • Switches
    • Resistance
    • Modulation
    • Dynamic range
    • Metals
    • Electrodes
    • Imaging
  • author_terms:
    • OxRAM
    • RRAM
    • Hybrid pixel
    • Pixel DR
    • Resistive computing
    • Memristive computing
  • dynamic_index_terms:
    • Resistive Switching
    • Dynamic Range
    • Behavioral Model
    • Low Exposure
    • Image Sensor
    • Camera Sensor
    • Memory Devices
    • Non-volatile Memory
    • Resistive Memory
    • Non-volatile Memory Devices
    • Illumination
    • Lighting
    • Metal Oxide
    • Metal-oxide
    • High Exposure
    • Light Exposure
    • Active Layer
    • Voltage Drop
    • Potential Drop
    • IR Drop
    • Resistance State
    • Resistance Status
    • I-V Curves
    • Current Voltage Characteristics
    • I-V Characteristics
    • Current-voltage Characteristics
    • Switching Events
    • Effect Of Switching
    • Fast Switching
    • Thyristor
    • High Dynamic Range
    • High-dynamic-range
    • Start Of Exposure
    • End Of Exposure
    • Different Rates Of Change
    • Pixel Array
    • Circuit Simulation
    • Gain Factor
    • Voltage Of The Device
    • Conductive Filaments
• isbn_formats:
  • format: Print on Demand(PoD) ISBN, value: 978-1-5386-4882-7, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-5386-4881-0, isbnType: New-2005
• authors:
  • Author Name: Ashwani Kumar
    Affiliation: Indian Institute of Technology Delhi, New Delhi, India
    Author URL: https://ieeexplore.ieee.org/author/37085771739
    ID: 37085771739
    Order: 1
    Author Affiliations:
    • Indian Institute of Technology Delhi, New Delhi, India
  • Author Name: Mukul Sarkar
    Affiliation: Indian Institute of Technology Delhi, New Delhi, India
    Author URL: https://ieeexplore.ieee.org/author/37394227700
    ID: 37394227700
    Order: 2
    Author Affiliations:
    • Indian Institute of Technology Delhi, New Delhi, India
  • Author Name: Manan Suri
    Affiliation: Indian Institute of Technology Delhi, New Delhi, India
    Author URL: https://ieeexplore.ieee.org/author/37902980300
    ID: 37902980300
    Order: 3
    Author Affiliations:
    • Indian Institute of Technology Delhi, New Delhi, India

Image Sensor

• sensor_type: CMOS
• resolution: 580 x 950 pixels
• dynamic_range: 94 dB
• pixel_size: not specified
• dark_current: not specified

Optical Data

• focal_length: not specified
• aperture: not specified
• field_of_view: not specified
• distortion: not specified

Performance Metrics

Applications & Benefits

• cell_imaging: CMOS Image Sensors (CIS) are used in modern imaging systems, improving detection of a broad range of light intensities.
• benefits: Improvement in dynamic range for low exposure stimuli, enabling clearer images in low-light conditions.

Supporting Organizations

• supported_by: Indian Institute of Technology Delhi

Manuscript Details

• publication_date: 27-30 May 2018

Relevancy Score

• score: 10
• missing_fields:
  • fill factor
  • quantum efficiency
  • readout speed
  • noise sources
  • analog-to-digital conversion techniques
  • microlenses
  • on-chip colour filters
  • global or rolling shutters
  • backside illumination

Processed JSON Filename

request_9f8d64bd-f4a8-432f-a8a6-acce57ca4076-oxram_resistive_switching_for_dr_improvement.json