Overview Of Ionizing Radiation Effects In Image Sensors Fabricated In A Deepsubmicrometer Cmos Imaging Technology

• doi: 10.1109/TED.2009.2030623
• title: Overview of Ionizing Radiation Effects in Image Sensors Fabricated in a Deep-Submicrometer CMOS Imaging Technology
• publisher: IEEE
• isbn:
• issn: 1557-9646
• rank: 3211
• access_type: LOCKED
• content_type: Journals
• abstract: An overview of ionizing radiation effects in imagers manufactured in a 0.18-mum CMOS image sensor technology is presented. Fourteen types of image sensors are characterized and irradiated by a 60Co source up to 5 kGy. The differences between these 14 designs allow us to separately estimate the effect of ionizing radiation on microlenses, on low- and zero-threshold-voltage MOSFETs and on several pixel layouts using P+ guard-rings and edgeless transistors. After irradiation, wavelength dependent responsivity drops are observed. All the sensors exhibit a large dark current increase attributed to the shallow trench isolation that surrounds the photodiodes. Saturation voltage rises and readout chain gain variations are also reported. Finally, the radiation hardening perspectives resulting from this paper are discussed.
• article_number: 5272218
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5272218
• html_url: https://ieeexplore.ieee.org/document/5272218/
• abstract_url: https://ieeexplore.ieee.org/document/5272218/
• publication_title: IEEE Transactions on Electron Devices
• conference_location:
• conference_dates:
• publication_number: 16
• is_number: 5290333
• publication_year: 2009
• publication_date: Nov. 2009
• start_page: 2594
• end_page: 2601
• citing_paper_count: 46
• citing_patent_count: 0
• download_count: 1079
• insert_date: 20090929
• index_terms:
  • ieee_terms:
    • Radiation effects
    • Photodiodes
    • Pixel
    • MOSFETs
    • Image sensors
  • author_terms:
    • Active pixel sensors (APSs)
    • CMOS image sensors (CISs)
    • dark current
    • ionizing radiation
    • microlenses
    • quantum efficiency
    • radiation hardening by design
    • responsivity
    • total dose
  • dynamic_index_terms:
    • Ionizing Radiation
    • Ion Irradiation
    • Ion Implantation
    • Effects Of Radiation
    • Effects Of Radiotherapy
    • Effect Of Irradiation
    • Image Sensor
    • Camera Sensor
    • Effects Of Ionizing Radiation
    • Dark Current
    • Radiation Tolerance
    • Radiation Hardness
    • Microlenses
    • Micro Lens
    • Saturation Voltage
    • Parasite
    • Quantum Efficiency
    • Dose Rate
    • Decrease In Response
    • Decrease In Reactivity
    • Increase In Velocity
    • Threshold Voltage
    • Spectral Response
    • Sensor Response
    • Voltage Variation
    • Transconductance
    • Conductive Transfer
    • Interface States
    • Interface Conditions
    • Charge Trapping
    • Threshold Voltage Shift
    • Ray Irradiation
    • Ray Radiation
    • Gate Oxide
    • Pixel Pitch
    • Double Sampling
    • Drain Voltage
    • Pixel Array
    • Part Of The Circuit
• authors:
  • Author Name: Vincent Goiffon
    Affiliation: Institut Supérieur de l'Aéronautique et de l'Espace, Université de Toulouse, Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/37593862700
    ID: 37593862700
    Order: 1
    Author Affiliations:
    • Institut Supérieur de l'Aéronautique et de l'Espace, Université de Toulouse, Toulouse, France
  • Author Name: Magali Estribeau
    Affiliation: Institut Supérieur de l'Aéronautique et de l'Espace, Université de Toulouse, Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/38111056500
    ID: 38111056500
    Order: 2
    Author Affiliations:
    • Institut Supérieur de l'Aéronautique et de l'Espace, Université de Toulouse, Toulouse, France
  • Author Name: Pierre Magnan
    Affiliation: Institut Supérieur de l'Aéronautique et de l'Espace, Université de Toulouse, Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/37400751600
    ID: 37400751600
    Order: 3
    Author Affiliations:
    • Institut Supérieur de l'Aéronautique et de l'Espace, Université de Toulouse, Toulouse, France

Image Sensor

• sensor_type: CMOS
• resolution: 128x128 pixels
• dynamic_range: not specified
• pixel_size: 7 μm and 10 μm
• dark_current: increased; specific values not provided

Optical Data

• focal_length: not specified
• aperture: not specified
• field_of_view: not specified
• distortion: not specified

Performance Metrics

• noise: increased dark current due to radiation exposure

Applications & Benefits

• cell_imaging: medical imaging, particle detection, space remote sensing
• benefits: low power consumption, random access of image data, integration of on-chip functionalities

Supporting Organizations

• supported_by: UCL, Belgium; Europractice-IMEC team

Manuscript Details

• publication_date: Nov. 2009

Relevancy Score

• score: 9
• missing_fields:
  • dynamic_range
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise

Processed JSON Filename

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