Novel Photodetectors And Image Sensors Based On Silicononinsulator
Substrate
- doi: 10.1109/ICICDT.2019.8790932
-
title: Novel photodetectors and image sensors based on
silicon-on-insulator substrate
- publisher: IEEE
- isbn: 978-1-7281-1854-3
- issn: 2381-3555
- rank: 3152
- access_type: LOCKED
- content_type: Conferences
-
abstract: In this paper, we review our recent work on
several novel photodetectors and image sensors based on
silicon-on-insulator substrate (SOI). Interface coupled photodetector
(ICPD) is demonstrated to largely improve the responsivity of the SOI
photodetector by interface coupling effect. In order to tune the
response spectrum, a MoS2/SOI heterogenous ICPD is developed, where the
MoS2 gate is used as sensitizer to tune the response spectrum of the
device from UV-band to visible/near-infrared band. Besides, a novel
one-transistor active pixel sensor (1T-APS) is presented, which uses
deep depletion effect in SOI substrate to collect photoelectrons and the
MOSFET on top Si layer to sense the accumulated photoelectron. The
1T-APS in-situ integrates photosensing, charge integration, buffer
amplification and random access in only one transistor. This is very
attractive for image sensing application thanks to it’s much more
compact pixel structure compared to conventional CMOS APS.
- article_number: 8790932
-
pdf_url:
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8790932
-
html_url:
https://ieeexplore.ieee.org/document/8790932/
-
abstract_url:
https://ieeexplore.ieee.org/document/8790932/
-
publication_title: 2019 International Conference on IC
Design and Technology (ICICDT)
- conference_location: Suzhou, China
- conference_dates: 17-19 June 2019
- publication_number: 8784132
- is_number: 8790825
- publication_year: 2019
- publication_date: 17-19 June 2019
- start_page: 1
- end_page: 2
- citing_paper_count: 2
- citing_patent_count: 0
- download_count: 399
- insert_date: 20190808
-
index_terms:
-
author_terms:
- Silicon-on-insulator (SOI)
- photodetector
- interface coupling effect
- one-transistor active pixel sensor
-
dynamic_index_terms:
- Photodetector
- Image Sensor
- Camera Sensor
- Silicon-on-insulator
- Buried Oxide
- Silicon On Insulator
- Photoelectron
- Photoelectric
- Active Sensors
- Random Access
- Response Spectrum
- Interfacial Coupling
- Sensor Pixel
- CCD Camera
- Charge-coupled Device
- Charge Coupled Device
- Quantum Efficiency
- Photocurrent
- Top Channel
- UV Band
- Bulk Si
- bulk-Si
-
isbn_formats:
-
format: Print on Demand(PoD) ISBN,
value: 978-1-7281-1854-3,
isbnType: New-2005
-
format: Electronic ISBN,
value: 978-1-7281-1853-6,
isbnType: New-2005
-
authors:
-
Author Name: J. Wan
Affiliation: State Key Laboratory of ASIC and
System, Fudan University, Shanghai, China
Author URL:
https://ieeexplore.ieee.org/author/37586866700
ID: 37586866700
Order: 1
Author Affiliations:
-
State Key Laboratory of ASIC and System, Fudan University,
Shanghai, China
-
Author Name: WZ. Bao
Affiliation: State Key Laboratory of ASIC and
System, Fudan University, Shanghai, China
Author URL:
https://ieeexplore.ieee.org/author/37086265013
ID: 37086265013
Order: 2
Author Affiliations:
-
State Key Laboratory of ASIC and System, Fudan University,
Shanghai, China
-
Author Name: JN. Deng
Affiliation: State Key Laboratory of ASIC and
System, Fudan University, Shanghai, China
Author URL:
https://ieeexplore.ieee.org/author/37086346661
ID: 37086346661
Order: 3
Author Affiliations:
-
State Key Laboratory of ASIC and System, Fudan University,
Shanghai, China
-
Author Name: J. Liu
Affiliation: State Key Laboratory of ASIC and
System, Fudan University, Shanghai, China
Author URL:
https://ieeexplore.ieee.org/author/37085851276
ID: 37085851276
Order: 4
Author Affiliations:
-
State Key Laboratory of ASIC and System, Fudan University,
Shanghai, China
-
Author Name: M. Arsalan
Affiliation: State Key Laboratory of ASIC and
System, Fudan University, Shanghai, China
Author URL:
https://ieeexplore.ieee.org/author/37086523727
ID: 37086523727
Order: 5
Author Affiliations:
-
State Key Laboratory of ASIC and System, Fudan University,
Shanghai, China
-
Author Name: ZX. Guo
Affiliation: State Key Laboratory of ASIC and
System, Fudan University, Shanghai, China
Author URL:
https://ieeexplore.ieee.org/author/37086537567
ID: 37086537567
Order: 6
Author Affiliations:
-
State Key Laboratory of ASIC and System, Fudan University,
Shanghai, China
-
Author Name: XY. Cao
Affiliation: State Key Laboratory of ASIC and
System, Fudan University, Shanghai, China
Author URL:
https://ieeexplore.ieee.org/author/37086364511
ID: 37086364511
Order: 7
Author Affiliations:
-
State Key Laboratory of ASIC and System, Fudan University,
Shanghai, China
Image Sensor
- sensor_type: CMOS
- resolution: (not specified in text)
- dynamic_range: (not specified in text)
- pixel_size: (not specified in text)
- dark_current: (not specified in text)
Optical Data
- focal_length: (not specified in text)
- aperture: (not specified in text)
- field_of_view: (not specified in text)
- distortion: (not specified in text)
Performance Metrics
- frame_rate: (not specified in text)
- signal_to_noise_ratio: (not specified in text)
- sensitivity: (not specified in text)
- shutter_speed: (not specified in text)
- power_consumption: (not specified in text)
- noise: (not specified in text)
Applications & Benefits
- cell_imaging: (not specified in text)
- benefits: (not specified in text)
Supporting Organizations
-
supported_by: Program of Shanghai Rising-star
(19QA1401100)
Manuscript Details
- publication_date: 17-19 June 2019
Relevancy Score
- score: 8
-
missing_fields:
- resolution
- dynamic_range
- pixel_size
- dark_current
- focal_length
- aperture
- field_of_view
- distortion
- frame_rate
- sensitivity
- shutter_speed
- power_consumption
- noise
- cell_imaging
- benefits
- publication_date
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