Novel And Low Cost Through Silicon Via Solution For Wafer Scale Packaging Of Image Sensors

• doi: 10.1109/EDAPS.2008.4736029
• title: Novel and low cost through silicon via solution for wafer scale packaging of image sensors
• publisher: IEEE
• isbn: 978-1-4244-2634-8
• issn: 2151-1233
• partnum: 08EX2425
• rank: 3146
• access_type: LOCKED
• content_type: Conferences
• abstract: Solid state CMOS image sensor are being incorporated in an every increasing diversity of products. This paper presents a new TSV solution suitable for both single die and stacked die wafer-scale packages. So- called 'via-through-pad' interconnects are a novel form of interconnect that superficially resemble a TSV but the differences are important and have profound implications for the product cost and reliability. Unusually, the materials of the package construction are sourced from outside the semiconductor industry. This is done to keep costs as low as possible. The process technology is wholly scaleable so the same tool set can be used irrespective of the wafer diameter. Data will be presented showing via-through-pad interconnects are able to surpass by a wide margin, the exacting reliability requirements of the automotive industry, both at the package and board level.
• article_number: 4736029
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=4736029
• html_url: https://ieeexplore.ieee.org/document/4736029/
• abstract_url: https://ieeexplore.ieee.org/document/4736029/
• publication_title: 2008 Electrical Design of Advanced Packaging and Systems Symposium
• conference_location: Seoul, Korea (South)
• conference_dates: 10-12 Dec. 2008
• publication_number: 4723928
• is_number: 4735975
• publication_year: 2008
• publication_date: 10-12 Dec. 2008
• start_page: 179
• end_page: 182
• citing_paper_count: 4
• citing_patent_count: 6
• download_count: 206
• insert_date: 20081230
• index_terms:
  • ieee_terms:
    • Costs
    • Silicon
    • Image sensors
    • Through-silicon vias
    • Semiconductor device packaging
    • Solid state circuits
    • CMOS image sensors
    • Building materials
    • Semiconductor materials
    • Electronics industry
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Wafer Scale
    • Through Silicon Via
    • Digital Camera
    • Electronic Products
    • Semiconductor Industry
    • Semiconductor Manufacturing
    • Semiconductor Fabrication
    • Cost Implications
    • Packaging Technology
    • Board Level
    • Camera Module
    • Conductive
    • Electrical Conductivity
    • Corrosion Resistance
    • Edge Contact
• isbn_formats:
  • format: CD, value: 978-1-4244-2634-8, isbnType: New-2005
  • format: Print ISBN, value: 978-1-4244-2633-1, isbnType: New-2005
• authors:
  • Author Name: G. Humpston
    Affiliation: Tessera, Aylesbury, UK
    Author URL: https://ieeexplore.ieee.org/author/37660653100
    ID: 37660653100
    Order: 1
    Author Affiliations:
    • Tessera, Aylesbury, UK

Image Sensor

• sensor_type: CMOS
• resolution: not directly specified
• dynamic_range: not directly specified
• pixel_size: not directly specified
• dark_current: not directly specified

Optical Data

• focal_length: not directly specified
• aperture: not directly specified
• field_of_view: not directly specified
• distortion: not directly specified

Performance Metrics

• frame_rate: not stated
• signal_to_noise_ratio: not directly specified

Applications & Benefits

• cell_imaging: Applicable in portable electronics such as camera ‘phones, digital still cameras, and automotive driver aids.
• benefits: Facilitates low-cost, high-volume manufacturing of image sensors.

Supporting Organizations

• supported_by: Tessera

Manuscript Details

• publication_date: 10-12 Dec. 2008

Relevancy Score

• score: 8
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise

Processed JSON Filename

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