Nano Cv Imaging Of Semiconductor Devices With Scanning Microwave Impedance Microscopy

• doi: 10.1109/IPFA.2018.8452492
• title: Nano C-V imaging of Semiconductor Devices with Scanning Microwave Impedance Microscopy
• publisher: IEEE
• isbn: 978-1-5386-4930-5
• issn: 1946-1550
• rank: 3082
• access_type: LOCKED
• content_type: Conferences
• abstract: Two doped semiconductor samples are measured using probe-based Scanning Microwave Impedance Microscopy (sMIM). One is a plan-view polished CMOS image sensor and the other is a cross-section polished power device. Both samples are imaged with sMIM using two different approaches: the first using a dual pass method with dC/dV images acquired simultaneously with sMIM during the first pass in contact mode, and the second pass at a fixed offset from the surface. The second method uses a non-resonant mode where C- V are acquired at specific lateral locations. The C- V curves are used to determine polarity compared to dC/dV and also to distinguish p-n junctions, characterize doping concentration, and build images at constant DC values to discern subtle changes not evident in traditional SCM imaging.
• article_number: 8452492
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8452492
• html_url: https://ieeexplore.ieee.org/document/8452492/
• abstract_url: https://ieeexplore.ieee.org/document/8452492/
• publication_title: 2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
• conference_location: Singapore
• conference_dates: 16-19 July 2018
• publication_number: 8443568
• is_number: 8452167
• publication_year: 2018
• publication_date: 16-19 July 2018
• start_page: 1
• end_page: 5
• citing_paper_count: 0
• citing_patent_count: 0
• download_count: 190
• insert_date: 20180902
• index_terms:
  • ieee_terms:
    • Capacitance-voltage characteristics
    • Semiconductor device measurement
    • Doping
    • Dielectrics
    • Microwave imaging
    • Microwave measurement
  • author_terms:
    • Scanning Microwave Impedance Microscopy
    • Nano-CeV
    • Scanning Probe Microscopy
    • doping characterization
    • Scanning Capacitance Microscopy
    • sMIM
    • SCM
  • dynamic_index_terms:
    • Semiconductor Devices
    • Scanning Microwave Impedance Microscopy
    • Subtle Changes
    • First Pass
    • Power Devices
    • Power Transistors
    • Power Semiconductor Devices
    • Doping Concentration
    • Chemical Doping
    • Doped Silicon
    • P-doping
    • P-n Junction
    • Phase Contrast
    • Phase Images
    • Phase-contrast
    • Logarithmic Scale
    • Log-scale
    • Log Scale
    • Image Regions
    • Carrier Concentration
    • Charge Carrier Density
    • Positive Slope
    • Doping Level
    • DC Bias
    • Scanning Probe Microscopy
    • Carrier Type
    • Low Doping
    • Amplitude Images
    • Photocathode
• isbn_formats:
  • format: Print on Demand(PoD) ISBN, value: 978-1-5386-4930-5, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-5386-4929-9, isbnType: New-2005
• authors:
  • Author Name: Oskar Amster
    Affiliation: PrimeNano, Inc., Santa Clara, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/37085839728
    ID: 37085839728
    Order: 1
    Author Affiliations:
    • PrimeNano, Inc., Santa Clara, CA, USA
  • Author Name: Kurt Rubin
    Affiliation: PrimeNano, Inc., Santa Clara, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/37086449870
    ID: 37086449870
    Order: 2
    Author Affiliations:
    • PrimeNano, Inc., Santa Clara, CA, USA
  • Author Name: Yongliang Yang
    Affiliation: PrimeNano, Inc., Santa Clara, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/37085843303
    ID: 37085843303
    Order: 3
    Author Affiliations:
    • PrimeNano, Inc., Santa Clara, CA, USA
  • Author Name: Dorai Iyer
    Affiliation: On Semiconductor, Phoenix, AZ, USA
    Author URL: https://ieeexplore.ieee.org/author/37086448761
    ID: 37086448761
    Order: 4
    Author Affiliations:
    • On Semiconductor, Phoenix, AZ, USA
  • Author Name: A. Messinger
    Affiliation: On Semiconductor, Phoenix, AZ, USA
    Author URL: https://ieeexplore.ieee.org/author/37086449225
    ID: 37086449225
    Order: 5
    Author Affiliations:
    • On Semiconductor, Phoenix, AZ, USA
  • Author Name: R. Crowder
    Affiliation: On Semiconductor, Phoenix, AZ, USA
    Author URL: https://ieeexplore.ieee.org/author/37086449238
    ID: 37086449238
    Order: 6
    Author Affiliations:
    • On Semiconductor, Phoenix, AZ, USA

Image Sensor

• sensor_type: CMOS
• resolution: Not explicitly stated in the text (commonly varies depending on the sensor design)
• dynamic_range: Not specified
• pixel_size: Not specified
• dark_current: Not specified

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

Applications & Benefits

• cell_imaging: Enables digital imaging in applications such as smartphones, medical devices, and automotive systems.
• benefits: Converts light into electrical signals, allowing for efficient digital imaging and integration into various technologies.

Supporting Organizations

• supported_by: Not specified

Manuscript Details

• publication_date: 16-19 July 2018

Relevancy Score

• score: 10
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise

Processed JSON Filename

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