Multimgy Radiation Hard Cmos Image Sensor Design Characterization And Xgamma Rays Total Ionizing Dose Tests

• doi: 10.1109/TNS.2015.2490479
• title: Multi-MGy Radiation Hard CMOS Image Sensor: Design, Characterization and X/Gamma Rays Total Ionizing Dose Tests
• publisher: IEEE
• isbn:
• issn: 1558-1578
• rank: 3062
• access_type: CCBY - IEEE is not the copyright holder of this material. Please follow the instructions via https://creativecommons.org/licenses/by/4.0/ to obtain full-text articles and stipulations in the API documentation.
• content_type: Journals
• abstract: A Radiation Hard CMOS Active Pixel Image Sensor has been designed, manufactured and exposed to X and $^{60}{\rm Co}\,\, \gamma $-ray sources up to several MGy of Total Ionizing Dose (TID). It is demonstrated that a Radiation-Hardened-By-Design (RHBD) CMOS Image Sensor (CIS) can still provide useful images after $10~\hbox{MGy}({\rm SiO}_2)$ (i.e. 1 Grad). This paper also presents the first detailed characterizations of CIS opto-electrical performances (i.e. dark current, quantum efficiency, gain, noise, transfer functions, etc.) in the MGy range. These results show that it is possible to design a CIS with good performances even after having absorbed several MGy. Four different RHBD photodiode designs are compared: a standard photodiode design, two well known RHBD layouts and a proposed improvement of the gated photodiode design. The proposed layout exhibits the best performances over the entire studied TID range and further optimizations are discussed. Several original MGy radiation effects are presented and discussed at the device and circuit levels and mitigation techniques are proposed to improve further the radiation hardness of future Rad-Hard CIS developments for extreme TID applications (e.g. for nuclear power plant monitoring/dismantling, experimental reactors (e.g. ITER) or next generation particle physics experiments (e.g. CERN)).
• article_number: 7348949
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7348949
• html_url: https://ieeexplore.ieee.org/document/7348949/
• abstract_url: https://ieeexplore.ieee.org/document/7348949/
• publication_title: IEEE Transactions on Nuclear Science
• conference_location:
• conference_dates:
• publication_number: 23
• is_number: 7348735
• publication_year: 2015
• publication_date: Dec. 2015
• start_page: 2956
• end_page: 2964
• citing_paper_count: 20
• citing_patent_count: 0
• download_count: 3042
• insert_date: 20151217
• index_terms:
  • ieee_terms:
    • Active pixel sensors
    • CMOS image sensors
    • Dark current
    • Ionizing radiation
    • Radiation effects
    • X-rays
    • Gamma-rays
  • author_terms:
    • Active pixel sensors
    • APS
    • CIS
    • CMOS
    • CMOS image sensors
    • complementary-metal-oxide-semiconductor
    • dark current
    • deep submicron process
    • DSM
    • ELT
    • enclosed layout transistors
    • gamma-rays
    • gigarad
    • Grad
    • image sensors
    • integrated circuit
    • interface states
    • ionizing radiation
    • MAPS
    • MGy
    • monolithic active pixel sensor
    • quantum efficiency
    • rad-hard
    • radiation damage
    • radiation effects
    • radiation hard
    • radiation hardening
    • radiation tolerant
    • RHBD
    • shallow trench isolation
    • STI
    • TID
    • total ionizing dose
    • trapped charge
    • X-rays
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Dose Concentration
    • Absorbed Dose
    • Total Ionizing Dose
    • Radiation Tolerance
    • Radiation Hardness
    • Effects Of Radiation
    • Effects Of Radiotherapy
    • Effect Of Irradiation
    • Quantum Efficiency
    • Nuclear Power Plant
    • Nuclear Facilities
    • Nuclear Plant
    • Standard Design
    • Dark Current
    • Research Reactor
    • Experimental Reactor
    • Positively Charged
    • Current Source
    • Current Regulations
    • Translational Level
    • Level Shift
    • Bias Voltage
    • Output Current
    • Depletion Region
    • Space Charge Region
    • Depletion Layer
    • Depletion Zone
    • Interface States
    • Interface Conditions
    • Charge Trapping
    • Digital Circuits
    • Digital Circuitry
    • Pixel Array
    • Optimal Voltage
    • Ray Irradiation
    • Ray Radiation
    • Gate Oxide
    • Threshold Voltage Shift
    • PIN Photodiode
    • Test Chip
    • Analog Circuits
    • Electric Field Enhancement
    • Readout Noise
    • Linear Range
• authors:
  • Author Name: Vincent Goiffon
    Affiliation: ISAE-SUPAERO, Université de Toulouse, Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/37593862700
    ID: 37593862700
    Order: 1
    Author Affiliations:
    • ISAE-SUPAERO, Université de Toulouse, Toulouse, France
  • Author Name: Franck Corbière
    Affiliation: ISAE-SUPAERO, Université de Toulouse, Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/38230497100
    ID: 38230497100
    Order: 2
    Author Affiliations:
    • ISAE-SUPAERO, Université de Toulouse, Toulouse, France
  • Author Name: Sébastien Rolando
    Affiliation: ISAE-SUPAERO, Université de Toulouse, Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/37085619853
    ID: 37085619853
    Order: 3
    Author Affiliations:
    • ISAE-SUPAERO, Université de Toulouse, Toulouse, France
  • Author Name: Magali Estribeau
    Affiliation: ISAE-SUPAERO, Université de Toulouse, Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/38111056500
    ID: 38111056500
    Order: 4
    Author Affiliations:
    • ISAE-SUPAERO, Université de Toulouse, Toulouse, France
  • Author Name: Pierre Magnan
    Affiliation: ISAE-SUPAERO, Université de Toulouse, Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/37400751600
    ID: 37400751600
    Order: 5
    Author Affiliations:
    • ISAE-SUPAERO, Université de Toulouse, Toulouse, France
  • Author Name: Barbara Avon
    Affiliation: ISAE-SUPAERO, Université de Toulouse, Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/37085613680
    ID: 37085613680
    Order: 6
    Author Affiliations:
    • ISAE-SUPAERO, Université de Toulouse, Toulouse, France
  • Author Name: Jérémy Baer
    Affiliation: ISAE-SUPAERO, Université de Toulouse, Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/37085632316
    ID: 37085632316
    Order: 7
    Author Affiliations:
    • ISAE-SUPAERO, Université de Toulouse, Toulouse, France
  • Author Name: Marc Gaillardin
    Affiliation: CEA, DAM, DIF, Arpajon, France
    Author URL: https://ieeexplore.ieee.org/author/37428401600
    ID: 37428401600
    Order: 8
    Author Affiliations:
    • CEA, DAM, DIF, Arpajon, France
  • Author Name: Romain Molina
    Affiliation: ISAE-SUPAERO, Université de Toulouse, Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/38285932500
    ID: 38285932500
    Order: 9
    Author Affiliations:
    • ISAE-SUPAERO, Université de Toulouse, Toulouse, France
  • Author Name: Philippe Paillet
    Affiliation: CEA, DAM, DIF, Arpajon, France
    Author URL: https://ieeexplore.ieee.org/author/37283486900
    ID: 37283486900
    Order: 10
    Author Affiliations:
    • CEA, DAM, DIF, Arpajon, France
  • Author Name: Sylvain Girard
    Affiliation: Université de Saint-Etienne, Laboratoire Hubert Curien, UMR-CNRS, Saint-Etienne, France
    Author URL: https://ieeexplore.ieee.org/author/37272737300
    ID: 37272737300
    Order: 11
    Author Affiliations:
    • Université de Saint-Etienne, Laboratoire Hubert Curien, UMR-CNRS, Saint-Etienne, France
  • Author Name: Aziouz Chabane
    Affiliation: ISAE-SUPAERO, Université de Toulouse, Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/37085629759
    ID: 37085629759
    Order: 12
    Author Affiliations:
    • ISAE-SUPAERO, Université de Toulouse, Toulouse, France
  • Author Name: Paola Cervantes
    Affiliation: ISAE-SUPAERO, Université de Toulouse, Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/38230496000
    ID: 38230496000
    Order: 13
    Author Affiliations:
    • ISAE-SUPAERO, Université de Toulouse, Toulouse, France
  • Author Name: Claude Marcandella
    Affiliation: CEA, DAM, DIF, Arpajon, France
    Author URL: https://ieeexplore.ieee.org/author/37331678900
    ID: 37331678900
    Order: 14
    Author Affiliations:
    • CEA, DAM, DIF, Arpajon, France

Image Sensor

• sensor_type: CMOS Image Sensor (CIS)
• resolution: Not explicitly stated
• dynamic_range: Not explicitly stated
• pixel_size: Not explicitly stated
• dark_current: Varies; standard photodiode has a low dark current before irradiation, while RHBD designs have significantly lower dark currents (x10 higher dark current than standard for RHBD photodiodes after irradiation) at initial tests and show a saturation regime in dark current after hundreds of kGy TID absorption. For RHBD photodiodes, the dark current improves significantly (factors over five orders of magnitude) at the MGy range compared to the standard design, which loses sensitivity due to STI inversion effects after around 10 kGy TID absorption, becoming impossible to measure thereafter.

Optical Data

• focal_length: Not explicitly stated
• aperture: Not explicitly stated
• field_of_view: Not explicitly stated
• distortion: Not explicitly stated

Performance Metrics

• frame_rate: Not explicitly stated
• signal_to_noise_ratio: Not explicitly stated
• sensitivity: Not explicitly stated
• shutter_speed: Not explicitly stated
• power_consumption: Not explicitly stated
• noise: Readout noise for RHBD designs remained stable around Vrms, while the standard design showed around Vrms.

Applications & Benefits

• cell_imaging: Potential applications include monitoring and remote handling in radioactive areas, mobile rescue robots in nuclear incidents, and particle physics experiments.
• benefits: High resilience against Total Ionizing Dose (TID), operable in extreme TID environments above 1 MGy while maintaining functionality and image quality.

Supporting Organizations

• supported_by: ISAE-SUPAERO, CEA, DAM, DIF, Université de Saint-Etienne

Manuscript Details

• publication_date: Dec. 2015

Relevancy Score

• score: 10
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption

Processed JSON Filename

request_3ac0ff24-08bc-476b-a30e-7374a3613378-multimgy_radiation_hard_cmos_image_sensor_design_characterization_and_xgamma_rays_total_ionizing_dose_tests.json