Mos Capacitors Characterization Under Illumination

• doi: 10.1109/ICMEL.2008.4559353
• title: MOS capacitors characterization under illumination
• publisher: IEEE
• isbn: 978-1-4244-1882-4
• issn:
• partnum: 08TH8992
• rank: 2969
• access_type: LOCKED
• content_type: Conferences
• abstract: This work reports on an investigation of capacitance-voltage (C-V) and current-voltage (I-V) measurements on metal-oxide-semiconductor (MOS) capacitors and transistors under illumination. C-V characteristics under illumination differ considerably from those in dark due to an inversion of the substrate. The measurement frequency and illumination dependency has been investigated, a model has been introduced and an application for CMOS image sensor transistors is presented. I-V measurements under illumination allow the extraction of photogenerated carriers and thanks to a carrier separation method it is possible to determine their density and localization.
• article_number: 4559353
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=4559353
• html_url: https://ieeexplore.ieee.org/document/4559353/
• abstract_url: https://ieeexplore.ieee.org/document/4559353/
• publication_title: 2008 26th International Conference on Microelectronics
• conference_location: Nis, Serbia and Montenegro
• conference_dates: 11-14 May 2008
• publication_number: 4545382
• is_number: 4559204
• publication_year: 2008
• publication_date: 11-14 May 2008
• start_page: 583
• end_page: 585
• citing_paper_count: 3
• citing_patent_count: 0
• download_count: 514
• insert_date: 20080709
• index_terms:
  • ieee_terms:
    • MOS capacitors
    • Lighting
    • Capacitance-voltage characteristics
    • Capacitance measurement
    • Current measurement
    • MOSFETs
    • Frequency measurement
    • Semiconductor device modeling
    • CMOS image sensors
    • Density measurement
  • dynamic_index_terms:
    • Measurement Frequency
    • Image Sensor
    • Camera Sensor
    • Current Voltage Measurements
    • Light Intensity
    • Digital Camera
    • Optical Detection
    • Illumination Intensity
    • Inverted Regions
    • Gate Current
    • PIN Photodiode
• isbn_formats:
  • format: CD, value: 978-1-4244-1882-4, isbnType: New-2005
  • format: Print ISBN, value: 978-1-4244-1881-7, isbnType: New-2005
• authors:
  • Author Name: D. Lopez
    Affiliation: STMicroelectronics, Crolles, France
    Author URL: https://ieeexplore.ieee.org/author/37671513100
    ID: 37671513100
    Order: 1
    Author Affiliations:
    • STMicroelectronics, Crolles, France
  • Author Name: F. Monsieur
    Affiliation: STMicroelectronics, Crolles, France
    Author URL: https://ieeexplore.ieee.org/author/37427371600
    ID: 37427371600
    Order: 2
    Author Affiliations:
    • STMicroelectronics, Crolles, France
  • Author Name: F. Balestra
    Affiliation: Electromagnetisme et Photonique of Grenoble, Institut de Microelectronique, Grenoble, France
    Author URL: https://ieeexplore.ieee.org/author/37268327000
    ID: 37268327000
    Order: 3
    Author Affiliations:
    • Electromagnetisme et Photonique of Grenoble, Institut de Microelectronique, Grenoble, France

Image Sensor

• sensor_type: CMOS
• resolution: not specified in text
• dynamic_range: not specified in text
• pixel_size: not specified in text
• dark_current: not specified in text

Optical Data

• focal_length: not specified in text
• aperture: not specified in text
• field_of_view: not specified in text
• distortion: not specified in text

Performance Metrics

• frame_rate: not specified in text
• signal_to_noise_ratio: not specified in text
• sensitivity: not specified in text
• shutter_speed: not specified in text
• power_consumption: not specified in text
• noise: not specified in text

Applications & Benefits

• cell_imaging: not specified in text
• benefits: not specified in text

Supporting Organizations

• supported_by: STMicroelectronics, Institut de Microelectronique, Electromagnetisme et Photonique of Grenoble

Manuscript Details

• publication_date: 11-14 May 2008

Relevancy Score

• score: 9
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise
  • cell_imaging
  • benefits

Processed JSON Filename

request_a1156bd0-ab84-469b-bd60-c5e04adf8ec8-mos_capacitors_characterization_under_illumination.json