Monolithic 33 V Ccdsoicmos Imager Technology

• doi: 10.1109/IEDM.2000.904414
• title: Monolithic 3.3 V CCD/SOI-CMOS imager technology
• publisher: IEEE
• isbn: 0-7803-6438-4
• issn:
• partnum: 00CH37138
• rank: 3041
• access_type: LOCKED
• content_type: Conferences
• abstract: We have developed a merged CCD/SOI-CMOS technology that enables the fabrication of monolithic, low-power imaging systems on a chip. The CCD's, fabricated in the bulk handle wafer, have charge-transfer inefficiencies of about 1/spl times/10/sup -5/ and well capacities of more than 100,000 electrons with 3.3-V clocks and 8/spl times/8-/spl mu/m pixels. Fully depleted 0.35-/spl mu/m SOI-CMOS ring oscillators have stage delay of 48 ps at 3.3 V. We demonstrate for the first time an integrated image sensor with charge-domain A/D conversion and on-chip clocking.
• article_number: 904414
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=904414
• html_url: https://ieeexplore.ieee.org/document/904414/
• abstract_url: https://ieeexplore.ieee.org/document/904414/
• publication_title: International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)
• conference_location: San Francisco, CA, USA
• conference_dates: 10-13 Dec. 2000
• publication_number: 7241
• is_number: 19535
• publication_year: 2000
• publication_date: 10-13 Dec. 2000
• start_page: 697
• end_page: 700
• citing_paper_count: 3
• citing_patent_count: 1
• download_count: 150
• insert_date: 20020806
• index_terms:
  • ieee_terms:
    • Charge coupled devices
    • CMOS image sensors
    • CMOS technology
    • Fabrication
    • Optical imaging
    • Image sensors
    • Optical noise
    • Circuits
    • Clocks
    • Crosstalk
  • dynamic_index_terms:
    • CCD Camera
    • Charge-coupled Device
    • Silicon-on-insulator
    • Buried Oxide
    • Bulk Region
    • Gate Length
• isbn_formats:
  • format: Print ISBN, value: 0-7803-6438-4, isbnType: Historical
• authors:
  • Author Name: V. Suntharalingam
    Affiliation: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
    Author URL: https://ieeexplore.ieee.org/author/37348650100
    ID: 37348650100
    Order: 1
    Author Affiliations:
    • Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
  • Author Name: B. Burke
    Affiliation: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
    Author URL: https://ieeexplore.ieee.org/author/37268760700
    ID: 37268760700
    Order: 2
    Author Affiliations:
    • Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
  • Author Name: M. Cooper
    Affiliation: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
    Author URL: https://ieeexplore.ieee.org/author/37089125667
    ID: 37089125667
    Order: 3
    Author Affiliations:
    • Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
  • Author Name: D. Yost
    Affiliation: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
    Author URL: https://ieeexplore.ieee.org/author/37338237800
    ID: 37338237800
    Order: 4
    Author Affiliations:
    • Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
  • Author Name: P. Gouker
    Affiliation: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
    Author URL: https://ieeexplore.ieee.org/author/37408001100
    ID: 37408001100
    Order: 5
    Author Affiliations:
    • Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
  • Author Name: M. Anthony
    Affiliation: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
    Author URL: https://ieeexplore.ieee.org/author/37088829889
    ID: 37088829889
    Order: 6
    Author Affiliations:
    • Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
    • Massachusetts Institute of Technology, Cambridge, MA, US
  • Author Name: H. Whittingham
    Affiliation:
    Author URL: https://ieeexplore.ieee.org/author/37088830461
    ID: 37088830461
    Order: 7
    
  • Author Name: J. Sage
    Affiliation: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
    Author URL: https://ieeexplore.ieee.org/author/37369320900
    ID: 37369320900
    Order: 8
    Author Affiliations:
    • Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
  • Author Name: J. Burns
    Affiliation: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
    Author URL: https://ieeexplore.ieee.org/author/37324984900
    ID: 37324984900
    Order: 9
    Author Affiliations:
    • Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
  • Author Name: S. Rabe
    Affiliation: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
    Author URL: https://ieeexplore.ieee.org/author/37266793400
    ID: 37266793400
    Order: 10
    Author Affiliations:
    • Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
  • Author Name: C. Chen
    Affiliation: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
    Author URL: https://ieeexplore.ieee.org/author/37367497900
    ID: 37367497900
    Order: 11
    Author Affiliations:
    • Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
  • Author Name: J. Knecht
    Affiliation: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
    Author URL: https://ieeexplore.ieee.org/author/37326337000
    ID: 37326337000
    Order: 12
    Author Affiliations:
    • Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
  • Author Name: S. Cann
    Affiliation: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
    Author URL: https://ieeexplore.ieee.org/author/37354500700
    ID: 37354500700
    Order: 13
    Author Affiliations:
    • Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
  • Author Name: P. Wyatt
    Affiliation: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
    Author URL: https://ieeexplore.ieee.org/author/37322345100
    ID: 37322345100
    Order: 14
    Author Affiliations:
    • Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
  • Author Name: C. Keast
    Affiliation: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
    Author URL: https://ieeexplore.ieee.org/author/37266797000
    ID: 37266797000
    Order: 15
    Author Affiliations:
    • Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA

Image Sensor

• sensor_type: CCD/SOI-CMOS
• resolution: 128x128 pixels
• dynamic_range: 10-12 bits (targeted)
• pixel_size: 8x8 µm
• dark_current: ~20 e-/pixel/frame (at -50°C)

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• power_consumption: low (specific value not provided but noted as reduced)
• noise: ~20 e- (dark current)

Applications & Benefits

• cell_imaging: Monolithic imaging sensor suitable for scientific or remote applications; precise imaging capabilities.
• benefits: Low-power imaging system on a chip, integrating CCD with SOI-CMOS to enhance performance.

Supporting Organizations

• supported_by: U.S. Government under contract F19628-00-C-0002.

Manuscript Details

• publication_date: 10-13 Dec. 2000

Relevancy Score

• score: 10
• missing_fields:
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed

Processed JSON Filename

request_b4556d42-3b58-4d97-93b8-bc865cf02112-monolithic_33_v_ccdsoicmos_imager_technology.json