Modeling And Analysis Of Chargedparticle Cmos Image Sensor Arrays

• doi: 10.1109/TNS.2009.2015303
• title: Modeling and Analysis of Charged-Particle CMOS Image Sensor Arrays
• publisher: IEEE
• isbn:
• issn: 1558-1578
• rank: 3018
• access_type: LOCKED
• content_type: Journals
• abstract: Direct-detection CMOS image sensors optimized for charged-particle imaging applications, such as electron microscopy and particle physics, have been designed, fabricated and characterized. Based on standard silicon CMOS active pixel sensor (APS) technology, the sensor arrays uses an 8 to 20 mum epitaxial layer that acts as a thicker sensitive region in the generation and collection of ionization electrons resulting from impinging high-energy particles. A range of optimizations to this technology have been developed via simulation and experimental device design. These include the simulation and measurement of charge collection efficiency versus recombination, effect of diode size and stray capacitance versus signal gain and noise, and the effect of different epitaxial silicon depths and the energy of incident electrons. Results from several experimental devices are presented and compared with simulations, including measurements from two prototypes that systematically and independently vary pixel pitch and diode area.
• article_number: 5076092
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5076092
• html_url: https://ieeexplore.ieee.org/document/5076092/
• abstract_url: https://ieeexplore.ieee.org/document/5076092/
• publication_title: IEEE Transactions on Nuclear Science
• conference_location:
• conference_dates:
• publication_number: 23
• is_number: 5075924
• publication_year: 2009
• publication_date: June 2009
• start_page: 1062
• end_page: 1068
• citing_paper_count: 3
• citing_patent_count: 0
• download_count: 310
• insert_date: 20090616
• index_terms:
  • ieee_terms:
    • Sensor arrays
    • Semiconductor device modeling
    • Image analysis
    • CMOS image sensors
    • Electrons
    • Design optimization
    • Silicon
    • Sensor phenomena and characterization
    • CMOS technology
    • Diodes
  • author_terms:
    • Active pixel sensor
    • image sensors
    • ionization
    • Monte Carlo simulation
    • photodiodes
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Sensor Array
    • Electron Impact
    • Electron Ionization
    • Electron Impact Ionization
    • Particle Physics
    • Electronic Collection
    • General Region
    • Charge Collection
    • Epitaxial Layer
    • Epilayer
    • High-energy Particles
    • Incident Electron
    • Pixel Pitch
    • Charge Collection Efficiency
    • Standard Sensor
    • Standard CMOS
    • Stray Capacitance
    • Spatial Resolution
    • Monte Carlo Simulation
    • Monte Carlo Method
    • Charge Carriers
    • General Solution
    • Weak Solution
    • Recombination Rate
    • Equivalent Thickness
    • keV X-ray
    • High-energy Electrons
    • Charged Particles
    • Conversion Gain
    • Depletion Region
    • Space Charge Region
    • Depletion Layer
    • Depletion Zone
    • Pixels In Region
    • Charge Diffusion
    • Beer-Lambert
    • Lambert-Beer
    • Beer Lambert Law
    • Probability Of Recombination
• authors:
  • Author Name: Shengdong Li
    Affiliation: University of California, Irvine, Irvine, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/37279611100
    ID: 37279611100
    Order: 1
    Author Affiliations:
    • University of California, Irvine, Irvine, CA, USA
  • Author Name: Howard S. Matis
    Affiliation: Lawrence Berkeley National Laboratory, Berkeley, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/37268832200
    ID: 37268832200
    Order: 2
    Author Affiliations:
    • Lawrence Berkeley National Laboratory, Berkeley, CA, USA
  • Author Name: Nguyen-Huu Xuong
    Affiliation: University of California, San Diego, La Jolla, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/37354643800
    ID: 37354643800
    Order: 3
    Author Affiliations:
    • University of California, San Diego, La Jolla, CA, USA
  • Author Name: Stuart Kleinfelder
    Affiliation: University of California, Irvine, Irvine, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/37278135600
    ID: 37278135600
    Order: 4
    Author Affiliations:
    • University of California, Irvine, Irvine, CA, USA

Image Sensor

• sensor_type: CMOS active pixel sensor (APS)
• resolution: 1024x1024
• dynamic_range: not specified
• pixel_size: 5 by 5 μm
• dark_current: not specified

Optical Data

• focal_length: not specified
• aperture: not specified
• field_of_view: not specified
• distortion: not specified

Performance Metrics

Applications & Benefits

• cell_imaging: Optimized for charged particle imaging applications such as electron microscopy and particle physics.
• benefits: High signal-to-noise ratio and ability to record minimum-ionizing charged particles.

Supporting Organizations

• supported_by: University of California at Irvine, Lawrence Berkeley National Laboratory, University of California San Diego

Manuscript Details

• publication_date: June 2009

Relevancy Score

• score: 10
• missing_fields:
  • dynamic_range
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise

Processed JSON Filename

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