Magnetoelectric Flexural Gate Transistor With Nanotesla Sensitivity

• doi: 10.1109/JMEMS.2012.2215012
• title: Magnetoelectric Flexural Gate Transistor With Nanotesla Sensitivity
• publisher: IEEE
• isbn:
• issn: 1941-0158
• rank: 2975
• access_type: LOCKED
• content_type: Journals
• abstract: Magnetic sensors capable of detecting tiny ac magnetic fields ranging from microtesla to picotesla are of great interest. In this paper, we demonstrate an integrated magnetoelectric (ME) flexural gate transistor with nanotesla magnetic field detection sensitivity at room temperature. The device capacitively couples a Metglas (Fe0.85B0.05Si0.1)-based magnetostrictive unimorph micromechanical cantilever beam to the gate of an n-channel field-effect transistor. Using this sensor configuration, a sensitivity of 0.23 mV/μT and a minimum detectable field of 60 nT/√Hz at 1 Hz and 1.5 mV/μT and 150 pT/√Hz at the flexural resonance of the cantilever structure of 4.9 kHz were obtained. The results demonstrate a significant improvement in the thin-film ME sensor integration with standard CMOS process and open the possibility of monolithic magnetic sensor arrays fabrication for biomedical imaging applications.
• article_number: 6301667
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6301667
• html_url: https://ieeexplore.ieee.org/document/6301667/
• abstract_url: https://ieeexplore.ieee.org/document/6301667/
• publication_title: Journal of Microelectromechanical Systems
• conference_location:
• conference_dates:
• publication_number: 84
• is_number: 6423868
• publication_year: 2013
• publication_date: Feb. 2013
• start_page: 71
• end_page: 79
• citing_paper_count: 9
• citing_patent_count: 0
• download_count: 707
• insert_date: 20120912
• index_terms:
  • ieee_terms:
    • Amorphous magnetic materials
    • Logic gates
    • Magnetostriction
    • Magnetic resonance imaging
    • Magnetoelectric effects
    • Transistors
  • author_terms:
    • Magnetoelectric (ME)
    • magnetostriction
    • ME flexural gate transistor (MEFGT)
    • Metglas $(\hbox{Fe}_{0.85}\hbox{B}_{0.05} \hbox{Si}_{0.1})$ thin films
    • microelectromechanical systems (MEMS)
  • dynamic_index_terms:
    • Gate Electrode
    • Microtesla
    • Millitesla
    • Nanotesla
    • mTesla
    • Magnetic Field
    • Magnetometer
    • Magnetometry
    • Magnetic Sensor
    • Field-effect Transistors
    • Magnetostrictive
    • Magnetic Array
    • AC Magnetic Field
    • Young’s Modulus
    • Elastic Modulus
    • Tensile Modulus
    • Resonance Frequency
    • Fabrication Process
    • Noise Sources
    • Permanent Magnet
    • Effective Capacity
    • Effective Capacitance
    • Residual Stress
    • Air Gap
    • Noise Spectrum
    • Colored Noise
    • Bias Field
    • Formation Of Arrays
    • Amorphous Silicon
    • Silicon Thin Film
    • Magnetic Field Measurements
    • Top Gate
    • Flicker Noise
    • Bias Magnetic Field
    • DC Magnetic Field
    • Gate Oxide
    • Helmholtz Coils
    • Transistor Channel
    • Etching
• authors:
  • Author Name: Feng Li
    Affiliation: Department of Electrical Engineering, Pennsylvania State University, University Park, PA, USA
    Author URL: https://ieeexplore.ieee.org/author/37533883300
    ID: 37533883300
    Order: 1
    Author Affiliations:
    • Department of Electrical Engineering, Pennsylvania State University, University Park, PA, USA
  • Author Name: Rajiv Misra
    Affiliation: Department of Physics, Pennsylvania State University, University Park, PA, USA
    Author URL: https://ieeexplore.ieee.org/author/37304708400
    ID: 37304708400
    Order: 2
    Author Affiliations:
    • Department of Physics, Pennsylvania State University, University Park, PA, USA
  • Author Name: Zhao Fang
    Affiliation: Texas Instruments, Inc., Dallas, TX, USA
    Author URL: https://ieeexplore.ieee.org/author/37401391400
    ID: 37401391400
    Order: 3
    Author Affiliations:
    • Texas Instruments, Inc., Dallas, TX, USA
  • Author Name: Yufei Wu
    Affiliation: Department of Electrical Engineering, Pennsylvania State University, University Park, PA, USA
    Author URL: https://ieeexplore.ieee.org/author/38546965700
    ID: 38546965700
    Order: 4
    Author Affiliations:
    • Department of Electrical Engineering, Pennsylvania State University, University Park, PA, USA
  • Author Name: Peter Schiffer
    Affiliation: Department of Physics, Pennsylvania State University, University Park, PA, USA
    Author URL: https://ieeexplore.ieee.org/author/37315484500
    ID: 37315484500
    Order: 5
    Author Affiliations:
    • Department of Physics, Pennsylvania State University, University Park, PA, USA
  • Author Name: Qiming Zhang
    Affiliation: Department of Electrical Engineering, Pennsylvania State University, University Park, PA, USA
    Author URL: https://ieeexplore.ieee.org/author/37307994000
    ID: 37307994000
    Order: 6
    Author Affiliations:
    • Department of Electrical Engineering, Pennsylvania State University, University Park, PA, USA
  • Author Name: Srinivas A. Tadigadapa
    Affiliation: Department of Electrical Engineering, Pennsylvania State University, University Park, PA, USA
    Author URL: https://ieeexplore.ieee.org/author/37427904000
    ID: 37427904000
    Order: 7
    Author Affiliations:
    • Department of Electrical Engineering, Pennsylvania State University, University Park, PA, USA
  • Author Name: Suman Datta
    Affiliation: Department of Electrical Engineering, Pennsylvania State University, University Park, PA, USA
    Author URL: https://ieeexplore.ieee.org/author/37273578800
    ID: 37273578800
    Order: 8
    Author Affiliations:
    • Department of Electrical Engineering, Pennsylvania State University, University Park, PA, USA

Image Sensor

• sensor_type: CMOS
• resolution: not specified
• dynamic_range: not specified
• pixel_size: not specified
• dark_current: not specified

Optical Data

• focal_length: not specified
• aperture: not specified
• field_of_view: not specified
• distortion: not specified

Performance Metrics

Applications & Benefits

• cell_imaging: not specified
• benefits: not specified

Supporting Organizations

• supported_by: not specified

Manuscript Details

• publication_date: Feb. 2013

Relevancy Score

• score: 3
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise
  • cell_imaging
  • benefits
  • supported_by

Processed JSON Filename

request_b3cea92e-341c-4681-9984-dc820e0ab9bf-magnetoelectric_flexural_gate_transistor_with_nanotesla_sensitivity.json