Lownoise Single Photon Avalanche Diodes In A 110Nm Cis Technology

• doi: 10.1109/ESSDERC.2018.8486883
• title: Low-Noise Single Photon Avalanche Diodes in a 110nm CIS Technology
• publisher: IEEE
• isbn: 978-1-5386-5402-6
• issn: 1930-8876
• rank: 2935
• access_type: LOCKED
• content_type: Conferences
• abstract: The increasing performance requirements on the development of single-photon image sensors has led to a tendency towards smaller technological nodes which allow to get higher levels of integration. This makes necessary the successful implementation of Single Photon Avalanches Diodes (SPAD) on deep sub-micron processes. This work presents the design and characterization of SPADs fabricated in a 110nm CMOS Image Sensor technology. These devices are characterized by a remarkably low dark count rate varying linearly with the SPAD active area, with median values per unit area as low as 0.06 to \pmb1.15Hz/μm2: when they are biased 1 to 6V above their breakdown voltage, respectively. A Photon Detection Efficiency larger than 50% (at 455nm) has been obtained biasing the device 6V over the breakdown voltage. The timing resolution does not exhibit any diffusion tail, and the FWHM values that have been measured at 4V excess bias are 86.5 (468-nm laser) and 69ps (831-nm laser).
• article_number: 8486883
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8486883
• html_url: https://ieeexplore.ieee.org/document/8486883/
• abstract_url: https://ieeexplore.ieee.org/document/8486883/
• publication_title: 2018 48th European Solid-State Device Research Conference (ESSDERC)
• conference_location: Dresden, Germany
• conference_dates: 3-6 Sept. 2018
• publication_number: 8476153
• is_number: 8486846
• publication_year: 2018
• publication_date: 3-6 Sept. 2018
• start_page: 94
• end_page: 97
• citing_paper_count: 11
• citing_patent_count: 0
• download_count: 792
• insert_date: 20181011
• index_terms:
  • ieee_terms:
    • Photonics
    • CMOS technology
    • Temperature measurement
    • Timing
    • Semiconductor device measurement
    • Ring lasers
    • P-i-n diodes
  • author_terms:
    • single-photon
    • avalanche diode
    • SPAD
    • image sensors
  • dynamic_index_terms:
    • Single Photon
    • Avalanche Diode
    • Single-photon Avalanche Diode
    • Single Photon Avalanche Diode
    • CMOS Image Sensor Technology
    • Unit Area
    • Time Resolution
    • Image Sensor
    • Camera Sensor
    • High Level Of Integration
    • Technology Node
    • Dark Count
    • Dark Count Rate
    • Activation Energy
    • Time-correlated Single-photon Counting
    • TCSPC
    • Time-correlated Single Photon Counting
    • Thermal Power Plants
    • Thermal Generation
    • Thermal Plants
    • CMOS Technology
• isbn_formats:
  • format: Print on Demand(PoD) ISBN, value: 978-1-5386-5402-6, isbnType: New-2005
  • format: USB ISBN, value: 978-1-5386-5400-2, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-5386-5401-9, isbnType: New-2005
• authors:
  • Author Name: Manuel Moreno-García
    Affiliation: Center for Materials & Microsystems Fondazione, Bruno Kessler Trento, Italy
    Author URL: https://ieeexplore.ieee.org/author/37086343244
    ID: 37086343244
    Order: 1
    Author Affiliations:
    • Center for Materials & Microsystems Fondazione, Bruno Kessler Trento, Italy
  • Author Name: Hesong Xu
    Affiliation: Center for Materials & Microsystems Fondazione, Bruno Kessler Trento, Italy
    Author URL: https://ieeexplore.ieee.org/author/37085387270
    ID: 37085387270
    Order: 2
    Author Affiliations:
    • Center for Materials & Microsystems Fondazione, Bruno Kessler Trento, Italy
  • Author Name: Leonardo Gasparini
    Affiliation: Center for Materials & Microsystems Fondazione, Bruno Kessler Trento, Italy
    Author URL: https://ieeexplore.ieee.org/author/37567529200
    ID: 37567529200
    Order: 3
    Author Affiliations:
    • Center for Materials & Microsystems Fondazione, Bruno Kessler Trento, Italy
  • Author Name: Mattero Perenzoni
    Affiliation: Center for Materials & Microsystems Fondazione, Bruno Kessler Trento, Italy
    Author URL: https://ieeexplore.ieee.org/author/37301008100
    ID: 37301008100
    Order: 4
    Author Affiliations:
    • Center for Materials & Microsystems Fondazione, Bruno Kessler Trento, Italy

Image Sensor

• sensor_type: CMOS
• resolution: Not specified
• dynamic_range: Not specified
• pixel_size: Not specified
• dark_current: Lowest median DCR per unit area is 0.06 Hz/µm^2 (at VEXC=1V) and 1.15 Hz/µm^2 (at VEXC=6V) with up to 70Hz for largest SPAD (L=20µm) at 293K; characterized at various temperatures and excess biases)

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• sensitivity: Not specificed
• noise: Median dark count rate as low as 0.06 Hz/µm^2.

Applications & Benefits

• cell_imaging: Sensitive, low-noise, time-resolved single-photon sensors for photon-starved applications
• benefits: High photon detection efficiency, good timing resolution, low dark count rate, and capability for large area SPADs.

Supporting Organizations

• supported_by: European Commission through SUPERTWIN project, id. 686731.

Manuscript Details

• publication_date: 3-6 Sept. 2018

Relevancy Score

• score: 8
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • fill_factor
  • quantum_efficiency
  • readout_speed

Processed JSON Filename

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