Lownoise Single Photon Avalanche Diodes In 015 M Cmos Technology

• doi: 10.1109/ESSDERC.2011.6044205
• title: Low-noise single Photon Avalanche Diodes in 0.15 μm CMOS technology
• publisher: IEEE
• isbn: 978-1-4577-0706-3
• issn: 1930-8876
• partnum: 11EX5535
• rank: 2950
• access_type: LOCKED
• content_type: Conferences
• abstract: Two different Single-Photon Avalanche Diode (SPAD) structures in a standard 0.15-nm CMOS technology are presented. A characterization of the two detectors, having a 10-μm active-area diameter, and monolithically integrated with a passive quenching circuit and a fast comparator is presented. The two devices exhibit respectively a typical dark count rate of 230cps and 160cps, an afterpulsing probability of 2.1% and 1.3% at 30ns dead time, a Photon Detection Probability of 31% and 26 % at λ=470nm and a timing resolution of 170ps and 60ps. The adopted technology is therefore promising for the realization of SPAD-based image sensors with good overall performance.
• article_number: 6044205
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6044205
• html_url: https://ieeexplore.ieee.org/document/6044205/
• abstract_url: https://ieeexplore.ieee.org/document/6044205/
• publication_title: 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)
• conference_location: Helsinki, Finland
• conference_dates: 12-16 Sept. 2011
• publication_number: 6034694
• is_number: 6044153
• publication_year: 2011
• publication_date: 12-16 Sept. 2011
• start_page: 179
• end_page: 182
• citing_paper_count: 27
• citing_patent_count: 0
• download_count: 1188
• insert_date: 20111013
• index_terms:
  • ieee_terms:
    • CMOS integrated circuits
    • CMOS technology
    • Junctions
    • Photonics
    • Temperature measurement
    • Detectors
    • Timing
  • dynamic_index_terms:
    • CMOS Technology
    • Avalanche Diode
    • Single-photon Avalanche Diode
    • Time Resolution
    • Image Sensor
    • Camera Sensor
    • Dead Time
    • Standard Technology
    • Dark Count Rate
    • Active Area
    • High Voltage
    • Higher Tendency
    • Pulse Width
    • Pulsewidth Modulation
    • Function Of Voltage
    • Readout Circuit
    • Buried Layer
• isbn_formats:
  • format: Online ISBN, value: 978-1-4577-0706-3, isbnType: New-2005
  • format: Print ISBN, value: 978-1-4577-0707-0, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-4577-0708-7, isbnType: New-2005
• authors:
  • Author Name: Lucio Pancheri
    Affiliation: Integrated Optical Sensors and Interfaces, Fondazione Bruno Kessler, Trento, Italy
    Author URL: https://ieeexplore.ieee.org/author/37282907500
    ID: 37282907500
    Order: 1
    Author Affiliations:
    • Integrated Optical Sensors and Interfaces, Fondazione Bruno Kessler, Trento, Italy
  • Author Name: David Stoppa
    Affiliation: Integrated Optical Sensors and Interfaces, Fondazione Bruno Kessler, Trento, Italy
    Author URL: https://ieeexplore.ieee.org/author/37268553400
    ID: 37268553400
    Order: 2
    Author Affiliations:
    • Integrated Optical Sensors and Interfaces, Fondazione Bruno Kessler, Trento, Italy

Image Sensor

• sensor_type: CMOS
• resolution: not specified
• dynamic_range: not specified
• pixel_size: not specified
• dark_current: 230 cps (pwell/niso), 160 cps (p+/nwell)

Optical Data

• focal_length: not specified
• aperture: not specified
• field_of_view: not specified
• distortion: not specified

Performance Metrics

Applications & Benefits

• cell_imaging: time-resolved fluorescence microscopy
• benefits: SPADs allow for shot-noise limited operation and excellent timing resolution.

Supporting Organizations

• supported_by: Provincia Autonoma of Trento, Italy

Manuscript Details

• publication_date: 12-16 Sept. 2011

Relevancy Score

• score: 7
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise
  • focal_length
  • aperture
  • field_of_view
  • distortion

Processed JSON Filename

request_42702e02-67dd-425a-92ff-4a7b600c83dd-lownoise_single_photon_avalanche_diodes_in_015_m_cmos_technology.json