Lownoise And Highefficiency Nearir Spads In 110Nm Cis Technology

• doi: 10.1109/ESSDERC.2019.8901757
• title: Low-Noise and High-Efficiency Near-IR SPADs in 110nm CIS Technology
• publisher: IEEE
• isbn: 978-1-7281-1540-5
• issn: 1930-8876
• rank: 2936
• access_type: LOCKED
• content_type: Conferences
• abstract: Photon detection at longer wavelengths is much desired for LiDAR applications. Silicon photodiodes with deeper junctions and larger multiplication regions are in principle more sensitive to near-IR photons. This paper presents the complete electro-optical characterization of a P-well/ Deep N-well singlephoton avalanche diodes integrated in 110nm CMOS image sensor technology. The performance of time-of-flight image sensors is determined by the characteristics of the individual SPADs. In order to fully characterize this technology, devices with various sizes, shapes and guard ring widths have been fabricated and tested. The measured mean breakdown voltage is of 18V. The proposed structure has 0.4Hz/µm2 dark count rate, 0.5% afterpulsing, 188ps FWHM (total) jitter and around 10% photon detection probability at 850nm wavelength. All figures have been measured at 3V excess voltage.
• article_number: 8901757
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8901757
• html_url: https://ieeexplore.ieee.org/document/8901757/
• abstract_url: https://ieeexplore.ieee.org/document/8901757/
• publication_title: ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC)
• conference_location: Cracow, Poland
• conference_dates: 23-26 Sept. 2019
• publication_number: 8894830
• is_number: 8901681
• publication_year: 2019
• publication_date: 23-26 Sept. 2019
• start_page: 250
• end_page: 253
• citing_paper_count: 7
• citing_patent_count: 0
• download_count: 600
• insert_date: 20191118
• index_terms:
  • author_terms:
    • single-photon avalanche diode (SPAD)
    • dark count rate
    • afterpulsing
    • FHWM jitter
    • photon detection probability
    • breakdown voltage
  • dynamic_index_terms:
    • Single-photon Avalanche Diode
    • Single Photon Avalanche Diode
    • CMOS Image Sensor Technology
    • Photodiode
    • Longer Wavelengths
    • Longer Wavelength
    • Image Sensor
    • Camera Sensor
    • Count Rate
    • Photon Detection
    • Dark Count
    • Avalanche Diode
    • Dark Count Rate
    • Active Area
    • Low Noise
    • Single Photon
    • Fill Factor
    • Instrument Response Function
• isbn_formats:
  • format: Print on Demand(PoD) ISBN, value: 978-1-7281-1540-5, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-7281-1539-9, isbnType: New-2005
• authors:
  • Author Name: I. Vornicu
    Affiliation: Instituto de Microelectrónica de Sevilla, IMSE-CNM (CSIC-Universidad de Sevilla)
    Author URL: https://ieeexplore.ieee.org/author/37072567800
    ID: 37072567800
    Order: 1
    Author Affiliations:
    • Instituto de Microelectrónica de Sevilla, IMSE-CNM (CSIC-Universidad de Sevilla)
  • Author Name: F. Bandi
    Affiliation: Instituto de Microelectrónica de Sevilla, IMSE-CNM (CSIC-Universidad de Sevilla)
    Author URL: https://ieeexplore.ieee.org/author/37086111725
    ID: 37086111725
    Order: 2
    Author Affiliations:
    • Instituto de Microelectrónica de Sevilla, IMSE-CNM (CSIC-Universidad de Sevilla)
  • Author Name: R. Carmona-Galán
    Affiliation: Instituto de Microelectrónica de Sevilla, IMSE-CNM (CSIC-Universidad de Sevilla)
    Author URL: https://ieeexplore.ieee.org/author/38270644000
    ID: 38270644000
    Order: 3
    Author Affiliations:
    • Instituto de Microelectrónica de Sevilla, IMSE-CNM (CSIC-Universidad de Sevilla)
  • Author Name: Á. Rodríguez-Vázquez
    Affiliation: Instituto de Microelectrónica de Sevilla, IMSE-CNM (CSIC-Universidad de Sevilla)
    Author URL: https://ieeexplore.ieee.org/author/38274433100
    ID: 38274433100
    Order: 4
    Author Affiliations:
    • Instituto de Microelectrónica de Sevilla, IMSE-CNM (CSIC-Universidad de Sevilla)

Image Sensor

• sensor_type: CMOS
• resolution: Not specified in the paper
• dynamic_range: Not specified in the paper
• pixel_size: Not specified in the paper
• dark_current: 0.4 Hz/μm² at 3V excess voltage

Optical Data

• focal_length: Not specified in the paper
• aperture: Not specified in the paper
• field_of_view: Not specified in the paper
• distortion: Not specified in the paper

Performance Metrics

• frame_rate: Not specified in the paper
• signal_to_noise_ratio: Not specified in the paper
• sensitivity: Not specified in the paper
• shutter_speed: Not specified in the paper
• power_consumption: Not specified in the paper
• noise: Not specified in the paper

Applications & Benefits

• cell_imaging: The SPAD designed is focused on applications such as LiDAR and photon detection, which is related to imaging technologies.
• benefits: The proposed SPAD structure achieves low dark count rate, high efficiency at near-IR range, and better photon detection probability.

Supporting Organizations

• supported_by: Office of Naval Research (USA), Junta de Andalucía, MINECO, European Regional Development Fund (ERDF/FEDER).

Manuscript Details

• publication_date: 23-26 Sept. 2019

Relevancy Score

• score: 9
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise
  • focal_length
  • aperture
  • field_of_view
  • distortion

Processed JSON Filename

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