Low Voltage Low Power Inverterbased Switchedcapacitor Deltasigma Modulator

• doi: 10.1109/JSSC.2008.2010973
• title: Low Voltage, Low Power, Inverter-Based Switched-Capacitor Delta-Sigma Modulator
• publisher: IEEE
• isbn:
• issn: 1558-173X
• rank: 2916
• access_type: LOCKED
• content_type: Journals
• abstract: An operational transconductance amplifier (OTA) is a major building block and consumes most of the power in switched-capacitor (SC) circuits, but it is difficult to design low-voltage OTAs in scaled CMOS technologies. Instead of using an OTA, this paper proposes an inverter-based SC circuit and its application to low-voltage, low-power delta-sigma (DeltaSigma) modulators. Detailed analysis and design optimizations are also provided. Three inverter-based DeltaSigma modulators are implemented for an implantable pacemaker, a CMOS image sensor, and an audio codec. The modulator-I for an implantable pacemaker achieves 65-dB peak-SNDR for 120-Hz bandwidth consuming 0.73 muW with 1.5 V supply. The modulator-II for a CMOS image sensor implemented with 320-channel parallel ADC architecture achieves 63-dB peak-SNDR for 8-kHz bandwidth consuming 5.6 muW for each channel with 1.2-V supply. The modulator-III for an audio codec achieves 81-dB peak-SNDR with 20-kHz bandwidth consuming 36 muW with 0.7-V supply. The prototype DeltaSigma modulators achieved high power efficiency maintaining sufficient performances for practical applications.
• article_number: 4768910
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=4768910
• html_url: https://ieeexplore.ieee.org/document/4768910/
• abstract_url: https://ieeexplore.ieee.org/document/4768910/
• publication_title: IEEE Journal of Solid-State Circuits
• conference_location:
• conference_dates:
• publication_number: 4
• is_number: 4768865
• publication_year: 2009
• publication_date: Feb. 2009
• start_page: 458
• end_page: 472
• citing_paper_count: 267
• citing_patent_count: 5
• download_count: 17624
• insert_date: 20090127
• index_terms:
  • ieee_terms:
    • Low voltage
    • Delta modulation
    • CMOS image sensors
    • Bandwidth
    • Circuits
    • CMOS technology
    • Modulation coding
    • Pacemakers
    • Codecs
    • Transconductance
  • author_terms:
    • Delta-sigma modulator
    • inverter-based switched-capacitor circuit
    • operational transconductance amplifier
    • scaled CMOS technology
    • switched-capacitor circuit
  • dynamic_index_terms:
    • Delta–sigma Modulator
    • Delta Sigma Modulator
    • High Power
    • Image Sensor
    • Camera Sensor
    • Power Efficiency
    • CMOS Technology
    • Major Building Blocks
    • Power Consumption
    • Thermal Noise
    • Current Noise
    • Noise Power
    • Settling Time
    • Colonial Times
    • Supply Voltage
    • Phase Error
    • Parasitic Capacitance
    • High Power Consumption
    • Intrinsic Noise
    • Intrinsic Randomness
    • Intrinsic Stochasticity
    • Inductive Load
    • Load Capacitance
    • Digital Circuits
    • Digital Circuitry
    • Inverted Regions
    • Common-mode Voltage
    • Weak Inverse
    • Gain Error
    • Low Supply Voltage
    • Power Supply Voltage
    • Transistor Size
    • Transistor Count
    • Clock Generator
    • Flicker Noise
    • Virtual Ground
    • Design Points
    • Threshold Voltage
    • Clock Frequency
• authors:
  • Author Name: Youngcheol Chae
    Affiliation: Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37274797400
    ID: 37274797400
    Order: 1
    Author Affiliations:
    • Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea
  • Author Name: Gunhee Han
    Affiliation: Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37270066200
    ID: 37270066200
    Order: 2
    Author Affiliations:
    • Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea

Image Sensor

• sensor_type: CMOS
• resolution: 320x240
• dynamic_range: 76 dB
• pixel_size: 5.6 μm
• dark_current: Not specified

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• frame_rate: 30 fps
• signal_to_noise_ratio: 72 dB
• power_consumption: 5.6 W
• noise: column fixed pattern noise of 0.135%

Applications & Benefits

• cell_imaging: The modulator is integrated into a CMOS image sensor with a column-parallel ADC architecture for imaging applications.
• benefits: Enables small area and low power consumption, suitable for portable devices.

Supporting Organizations

• supported_by: Samsung Electronics Co. Ltd.

Manuscript Details

• publication_date: Feb. 2009

Relevancy Score

• score: 9
• missing_fields:
  • fill factor
  • quantum efficiency
  • readout speed
  • noise sources
  • analog-to-digital conversion techniques
  • microlenses
  • on-chip colour filters
  • global or rolling shutters
  • backside illumination

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