Low Readout Noise Photodiode Based Cmos Image Sensor With High Fill Factor For Biomedical Application

• doi: 10.1109/DELCON54057.2022.9753074
• title: Low Readout Noise Photodiode based CMOS Image Sensor with High Fill Factor for Biomedical application
• publisher: IEEE
• isbn: 978-1-6654-5884-9
• issn:
• rank: 2915
• access_type: LOCKED
• content_type: Conferences
• abstract: The Complementary Metal-Oxide Semiconductor(CMOS) technology image sensor contemplate rather than Charge Coupled Device (CCD), owing to low noise, dark current, miniaturization, decline production cost, chip area susceptibility, and also the picture quality. Particularly in the visual prosthesis implantable devices, the signal process begins from capturing the image through the sensor. In this paper, a 180nm CMOS Image sensor (CIS) $128(\mathrm{H})^{\ast}128(\mathrm{V})$ pixel array designed with the proposed pixel leaf cell using photodiode can operates in three modes. The new leaf cell designed by photodiode specification reduces dark current and improves Full-Well Capacity (FWC) & Fill Factor (obtained by having 20.5pF diode capacitance) is perfectly measured. Further by adopting the Correlated Double Sampling (CDS) technique in the column readout circuitry reduces the temporal noise in image sensor with evidence of better closed-loop gain & linearity. The leaf cell layout generation characterizes the CIS parametric analysis.
• article_number: 9753074
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9753074
• html_url: https://ieeexplore.ieee.org/document/9753074/
• abstract_url: https://ieeexplore.ieee.org/document/9753074/
• publication_title: 2022 IEEE Delhi Section Conference (DELCON)
• conference_location: New Delhi, India
• conference_dates: 11-13 Feb. 2022
• publication_number: 9752769
• is_number: 9752688
• publication_year: 2022
• publication_date: 11-13 Feb. 2022
• start_page: 1
• end_page: 5
• citing_paper_count: 1
• citing_patent_count: 0
• download_count: 446
• insert_date: 20220420
• index_terms:
  • ieee_terms:
    • Semiconductor device measurement
    • Image resolution
    • Fill factor (solar cell)
    • Layout
    • Linearity
    • CMOS image sensors
    • Dark current
  • author_terms:
    • CMOS Image Sensor (CIS)
    • Correlated Double Sampling (CDS) technique
    • Quantum Efficiency
    • Fill Factor(FF)
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Fill Factor
    • High Fill Factor
    • Readout Noise
    • CCD Camera
    • Charge-coupled Device
    • Charge Coupled Device
    • Implantable Devices
    • Leaf Cells
    • Dark Current
    • Pixel Array
    • Picture Quality
    • Impression Of Quality
    • Complementary Metal Oxide Semiconductor Technology
    • Complementary Metal-oxide-semiconductor Technology
    • Temporal Noise
    • Control Signal
    • Graphics Processing Unit
    • GPUs
    • Quantum Efficiency
    • Analog-to-digital Converter
    • Analog-to-digital
    • Digital-to-analog Converter
    • Output Response
    • Operational Amplifier
    • Op-amp
    • Mode Of Integration
    • PIN Photodiode
    • Conversion Gain
    • Output Pixel
• isbn_formats:
  • format: Print on Demand(PoD) ISBN, value: 978-1-6654-5884-9, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-6654-5883-2, isbnType: New-2005
• authors:
  • Author Name: Hima Bindu Katikala
    Affiliation: Department of Electronics and Communication Engineering, Vignan's Foundation for Science Technology and Research, India
    Author URL: https://ieeexplore.ieee.org/author/37086354627
    ID: 37086354627
    Order: 1
    Author Affiliations:
    • Department of Electronics and Communication Engineering, Vignan's Foundation for Science Technology and Research, India
  • Author Name: Telagathoti Pitchaiah
    Affiliation: Department of Electronics and Communication Engineering, Vignan's Foundation for Science Technology and Research, India
    Author URL: https://ieeexplore.ieee.org/author/37085347333
    ID: 37085347333
    Order: 2
    Author Affiliations:
    • Department of Electronics and Communication Engineering, Vignan's Foundation for Science Technology and Research, India
  • Author Name: G. Ramana Murthy
    Affiliation: Department of Electronics and Communication Engineering, Alliance College of Engineering and Design, Alliance University, Bangalore, India
    Author URL: https://ieeexplore.ieee.org/author/37086284000
    ID: 37086284000
    Order: 3
    Author Affiliations:
    • Department of Electronics and Communication Engineering, Alliance College of Engineering and Design, Alliance University, Bangalore, India

Image Sensor

• sensor_type: CMOS Image Sensor (CIS)
• resolution: 128(H) x 128(V)
• dynamic_range: 14.43 dB
• pixel_size: 4.66 x 4.66 µm2
• dark_current: 0.6209 pA/cm2 @ room T°C

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• signal_to_noise_ratio: 59.98 dB
• noise: 0.56 e-rms

Applications & Benefits

• cell_imaging: Used for low light condition imaging applications, such as in biomedical applications.
• benefits: Low noise and improved signal-to-noise ratio for better image quality.

Supporting Organizations

• supported_by: Vignan's Foundation for Science Technology and Research, Alliance University

Manuscript Details

• publication_date: 11-13 Feb. 2022

Relevancy Score

• score: 10
• missing_fields:
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • sensitivity
  • shutter_speed
  • power_consumption

Processed JSON Filename

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