Low Power High Dynamic Range Cmos Image Sensor Employing Pixellevel Oversampling Sigmadelta Analogtodigital Conversion

• doi: 10.1109/JSEN.2011.2158818
• title: Low Power, High Dynamic Range CMOS Image Sensor Employing Pixel-Level Oversampling $\Sigma\Delta$ Analog-to-Digital Conversion
• publisher: IEEE
• isbn:
• issn: 2379-9153
• rank: 2914
• access_type: LOCKED
• content_type: Journals
• abstract: We present a theoretical analysis, design, and experimental characterization of a CMOS image sensor with pixel-level ΣΔ oversampling analog-to-digital conversion (ADC). The design employs five transistors per-pixel to implement a charge-based ΣΔ ADC at each pixel. In the current design a dynamic regenerative latch comparator is divided into an input transistor, which is contained within each pixel, and the remaining comparator structure shared among the pixels of each column. A charge feedback digital-to-analog converter (DAC) is implemented at each pixel with a three-transistor structure. As opposed to more traditional CMOS image sensors, this image sensor architecture is suitable for implementations in advanced low supply voltage CMOS technologies since its dynamic range is not affected by the reduction of the pixel reset voltage. In addition, similar to the readout methods in low power random access memory designs, this pixel readout architecture does not employ any active amplifiers which allows for low static power operation. Experimental characterization of a prototype fabricated in a 0.35 μm silicided CMOS technology is presented. The estimated power consumption of the fully integrated 128 × 128 imager including decimation filters and I/O interface is 60 nW/pixel at 30 frames per second for 8-bits per-pixel. A peak signal-to-noise ratio of 52 dB and intra-scene dynamic range of 74 dB were measured. The dynamic range was extended to 91 dB through control of the in-pixel DAC supply voltage over the range of 0.8 V-3.3 V.
• article_number: 5784286
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5784286
• html_url: https://ieeexplore.ieee.org/document/5784286/
• abstract_url: https://ieeexplore.ieee.org/document/5784286/
• publication_title: IEEE Sensors Journal
• conference_location:
• conference_dates:
• publication_number: 7361
• is_number: 6145763
• publication_year: 2012
• publication_date: April 2012
• start_page: 737
• end_page: 746
• citing_paper_count: 28
• citing_patent_count: 5
• download_count: 3446
• insert_date: 20110606
• index_terms:
  • ieee_terms:
    • Pixel
    • Image sensors
    • Photodiodes
    • Noise
    • Dynamic range
    • Transistors
    • Quantization
  • author_terms:
    • High dynamic range
    • image sensors
    • low power consumption
    • sigma-delta modulation
  • dynamic_index_terms:
    • Dynamic Range
    • Analog-to-digital Converter
    • Analog-to-digital
    • Digital-to-analog Converter
    • Image Sensor
    • Camera Sensor
    • High Dynamic Range
    • Power Consumption
    • Low Voltage
    • Peak Signal-to-noise Ratio
    • PSNR
    • Random Access Memory
    • Noise Sources
    • Pixel Level
    • Amount Of Charge
    • Charge Quantity
    • Bitstream
    • Binary Sequence
    • Light Sensitivity
    • Photophobic
    • Gain Settings
    • Charge Injection
    • Pixel Array
    • Quantization Noise
    • Packet Size
    • System-on-chip
    • Voltage Swing
    • Noise Injection
    • Start-up Phase
    • Sensitivity To Light
    • Sun Sensitivity
    • Switching Noise
    • Memory Block
    • Regeneration Buffer
    • Framebuffer
    • Display Memory
    • Conventional Sensors
    • Array Images
    • Array Tomography
    • Delta-sigma
    • Sigma-delta
• authors:
  • Author Name: Zeljko Ignjatovic
    Affiliation: Electrical and Computer Engineering Department, University of Rochester, Rochester, NY, USA
    Author URL: https://ieeexplore.ieee.org/author/37270103900
    ID: 37270103900
    Order: 1
    Author Affiliations:
    • Electrical and Computer Engineering Department, University of Rochester, Rochester, NY, USA
  • Author Name: Danijel Maricic
    Affiliation: Electrical and Computer Engineering Department, University of Rochester, Rochester, NY, USA
    Author URL: https://ieeexplore.ieee.org/author/37887608500
    ID: 37887608500
    Order: 2
    Author Affiliations:
    • Electrical and Computer Engineering Department, University of Rochester, Rochester, NY, USA
  • Author Name: Mark F. Bocko
    Affiliation: Electrical and Computer Engineering Department, University of Rochester, Rochester, NY, USA
    Author URL: https://ieeexplore.ieee.org/author/37270106500
    ID: 37270106500
    Order: 3
    Author Affiliations:
    • Electrical and Computer Engineering Department, University of Rochester, Rochester, NY, USA

Image Sensor

• sensor_type: CMOS
• resolution: 128x128
• dynamic_range: 74 dB (extended to 91 dB)
• pixel_size: Not specified
• dark_current: Not specified

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• frame_rate: 30 fps
• signal_to_noise_ratio: 52 dB
• sensitivity: Measured to be 0.2 (unit not specified)
• power_consumption: 60 nW/pixel
• noise: Quantization noise at levels determined by the DAC

Applications & Benefits

• cell_imaging: Suitable for battery-powered remote viewing and handheld consumer products. High dynamic range applications like automotive lane departure systems.
• benefits: Reduced power consumption, high dynamic range, low fixed pattern noise (FPN), efficient pixel-level operation.

Supporting Organizations

• supported_by: Office of Naval Research, NASA/APRA

Manuscript Details

• publication_date: April 2012

Relevancy Score

• score: 10
• missing_fields:
  • fill factor
  • quantum efficiency
  • readout speed
  • noise sources
  • analog-to-digital conversion techniques
  • microlenses
  • on-chip colour filters
  • global or rolling shutters
  • backside illumination

Processed JSON Filename

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