Low Dark Noise And 85K E Full Well Capacity In A 2Layer Transistor Stacked 08 M Dual Pixel Cis With Intermediate Polysi Wiring

• doi: 10.1109/IEDM50854.2024.10873371
• title: Low Dark Noise and 8.5k e− Full Well Capacity in a 2-Layer Transistor Stacked 0.8μ m Dual Pixel CIS with Intermediate Poly-Si Wiring
• publisher: IEEE
• isbn: 979-8-3503-6543-6
• issn: 0163-1918
• rank: 2907
• access_type: LOCKED
• content_type: Conferences
• abstract: This paper describes an advanced 2-Layer transistor pixel stacked CMOS image sensor with the world's smallest $0.8\mu \mathrm{m}$ dual pixel. Intermediate poly-Si wiring is implemented between deep contacts and photo diode Si to improve layout flexibility and reduce input-referred random noise. We also optimize the photodiode design, achieving high full well capacity of 8500 $\mathrm{e}^{-}$ without degrading pinning and electrical separation in dual pixel. In addition, the proposed $0.8\mu \mathrm{m}$ dual pixel device is demonstrated to exhibit high-resolution image and comparable optical characteristics to those of the $0.8\mu \mathrm{m}$ single pixel device with a $2\times 2$ on-chip lens.
• article_number: 10873371
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10873371
• html_url: https://ieeexplore.ieee.org/document/10873371/
• abstract_url: https://ieeexplore.ieee.org/document/10873371/
• publication_title: 2024 IEEE International Electron Devices Meeting (IEDM)
• conference_location: San Francisco, CA, USA
• conference_dates: 7-11 Dec. 2024
• publication_number: 10872985
• is_number: 10872987
• publication_year: 2024
• publication_date: 7-11 Dec. 2024
• start_page: 1
• end_page: 4
• citing_paper_count: 0
• citing_patent_count: 0
• download_count: 130
• insert_date: 20250218
• index_terms:
  • ieee_terms:
    • Wiring
    • Noise
    • Layout
    • Optical imaging
    • Silicon
    • System-on-chip
    • Transistors
    • Photodiodes
    • Optical sensors
    • Quantum capacitance
  • dynamic_index_terms:
    • Low Dark Noise
    • High-resolution Images
    • Image Features
    • Imaging Characteristics
    • Photodiode
    • Optical Characteristics
    • Optical Features
    • Optical Quality
    • Input-referred Noise
    • Quantum Efficiency
    • Conversion Gain
    • Reset Gate
    • Dark Signal
    • 3D Integration
• isbn_formats:
  • format: Print on Demand(PoD) ISBN, value: 979-8-3503-6543-6, isbnType: New-2005
  • format: Electronic ISBN, value: 979-8-3503-6542-9, isbnType: New-2005
• authors:
  • Author Name: Y. Satake
    Affiliation: Sony Semiconductor Solutions Corp., Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37089461201
    ID: 37089461201
    Order: 1
    Author Affiliations:
    • Sony Semiconductor Solutions Corp., Kanagawa, Japan
  • Author Name: Y. Tanaka
    Affiliation: Sony Semiconductor Solutions Corp., Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37089613798
    ID: 37089613798
    Order: 2
    Author Affiliations:
    • Sony Semiconductor Solutions Corp., Kanagawa, Japan
  • Author Name: S. Sato
    Affiliation: Sony Semiconductor Solutions Corp., Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37333589900
    ID: 37333589900
    Order: 3
    Author Affiliations:
    • Sony Semiconductor Solutions Corp., Kanagawa, Japan
  • Author Name: M. Takase
    Affiliation: Sony Semiconductor Solutions Corp., Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37088617556
    ID: 37088617556
    Order: 4
    Author Affiliations:
    • Sony Semiconductor Solutions Corp., Kanagawa, Japan
  • Author Name: M. Hoyano
    Affiliation: Sony Semiconductor Solutions Corp., Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/501785102343004
    ID: 501785102343004
    Order: 5
    Author Affiliations:
    • Sony Semiconductor Solutions Corp., Kanagawa, Japan
  • Author Name: S. Kasukawa
    Affiliation: Sony Semiconductor Solutions Corp., Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37086489092
    ID: 37086489092
    Order: 6
    Author Affiliations:
    • Sony Semiconductor Solutions Corp., Kanagawa, Japan
  • Author Name: M. Tomita
    Affiliation: Sony Semiconductor Solutions Corp., Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37089925257
    ID: 37089925257
    Order: 7
    Author Affiliations:
    • Sony Semiconductor Solutions Corp., Kanagawa, Japan
  • Author Name: Y. Kikuchi
    Affiliation: Sony Semiconductor Solutions Corp., Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37089925911
    ID: 37089925911
    Order: 8
    Author Affiliations:
    • Sony Semiconductor Solutions Corp., Kanagawa, Japan
  • Author Name: J. Yamamoto
    Affiliation: Sony Semiconductor Manufacturing Corp., Nagasaki, Japan
    Author URL: https://ieeexplore.ieee.org/author/37087216734
    ID: 37087216734
    Order: 9
    Author Affiliations:
    • Sony Semiconductor Manufacturing Corp., Nagasaki, Japan
  • Author Name: K. Tokuhiro
    Affiliation: Sony Semiconductor Manufacturing Corp., Nagasaki, Japan
    Author URL: https://ieeexplore.ieee.org/author/891974890264753
    ID: 891974890264753
    Order: 10
    Author Affiliations:
    • Sony Semiconductor Manufacturing Corp., Nagasaki, Japan
  • Author Name: K. Furumoto
    Affiliation: Sony Semiconductor Manufacturing Corp., Nagasaki, Japan
    Author URL: https://ieeexplore.ieee.org/author/406837576833059
    ID: 406837576833059
    Order: 11
    Author Affiliations:
    • Sony Semiconductor Manufacturing Corp., Nagasaki, Japan
  • Author Name: H. Sugino
    Affiliation: Sony Semiconductor Manufacturing Corp., Nagasaki, Japan
    Author URL: https://ieeexplore.ieee.org/author/38092768200
    ID: 38092768200
    Order: 12
    Author Affiliations:
    • Sony Semiconductor Manufacturing Corp., Nagasaki, Japan
  • Author Name: Y. Murakawa
    Affiliation: Sony Semiconductor Manufacturing Corp., Nagasaki, Japan
    Author URL: https://ieeexplore.ieee.org/author/37087614859
    ID: 37087614859
    Order: 13
    Author Affiliations:
    • Sony Semiconductor Manufacturing Corp., Nagasaki, Japan
  • Author Name: S. Yamazaki
    Affiliation: Sony Semiconductor Manufacturing Corp., Nagasaki, Japan
    Author URL: https://ieeexplore.ieee.org/author/37361377600
    ID: 37361377600
    Order: 14
    Author Affiliations:
    • Sony Semiconductor Manufacturing Corp., Nagasaki, Japan
  • Author Name: H. Mizuno
    Affiliation: Sony Semiconductor Manufacturing Corp., Nagasaki, Japan
    Author URL: https://ieeexplore.ieee.org/author/37089121810
    ID: 37089121810
    Order: 15
    Author Affiliations:
    • Sony Semiconductor Manufacturing Corp., Nagasaki, Japan
  • Author Name: H. Tomita
    Affiliation: Sony Semiconductor Manufacturing Corp., Nagasaki, Japan
    Author URL: https://ieeexplore.ieee.org/author/37978926300
    ID: 37978926300
    Order: 16
    Author Affiliations:
    • Sony Semiconductor Manufacturing Corp., Nagasaki, Japan
  • Author Name: N. Yamada
    Affiliation: Sony Semiconductor Manufacturing Corp., Nagasaki, Japan
    Author URL: https://ieeexplore.ieee.org/author/37089925155
    ID: 37089925155
    Order: 17
    Author Affiliations:
    • Sony Semiconductor Manufacturing Corp., Nagasaki, Japan
  • Author Name: T. Hirano
    Affiliation: Sony Semiconductor Solutions Corp., Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/721724823977834
    ID: 721724823977834
    Order: 18
    Author Affiliations:
    • Sony Semiconductor Solutions Corp., Kanagawa, Japan
  • Author Name: Y. Kitano
    Affiliation: Sony Semiconductor Solutions Corp., Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37089700775
    ID: 37089700775
    Order: 19
    Author Affiliations:
    • Sony Semiconductor Solutions Corp., Kanagawa, Japan

Image Sensor

• sensor_type: CMOS
• resolution: Not explicitly provided
• dynamic_range: Not explicitly provided
• pixel_size: 0.8μm
• dark_current: Not explicitly provided

Optical Data

• focal_length: Not explicitly provided
• aperture: Not explicitly provided
• field_of_view: Not explicitly provided
• distortion: Not explicitly provided

Performance Metrics

• frame_rate: Not explicitly provided
• signal_to_noise_ratio: Not explicitly provided
• sensitivity: Not explicitly provided
• shutter_speed: Not explicitly provided
• power_consumption: Not explicitly provided
• noise: Input-referred noise level reduced by approximately 42% compared to 1.0μm DP.

Applications & Benefits

• cell_imaging: Enabled by 2-Layer DP CIS technology.
• benefits: High resolution, high full well capacity (FWC) of 8500 e−, low dark noise.

Supporting Organizations

• supported_by: Sony Semiconductor Solutions Corp., Sony Semiconductor Manufacturing Corp.

Manuscript Details

• publication_date: 7-11 Dec. 2024

Relevancy Score

• score: 8
• missing_fields:
  • brightness
  • noise sources
  • quantum efficiency
  • fill factor
  • readout speed
  • analog-to-digital conversion techniques
  • microlenses
  • on-chip colour filters
  • global or rolling shutters
  • backside illumination

Processed JSON Filename

request_2a5c10c9-9a3c-48a2-8efb-a28290035a19-low_dark_noise_and_85k_e_full_well_capacity_in_a_2layer_transistor_stacked_08_m_dual_pixel_cis_with_intermediate_polysi_wiring.json