Long Exposure Time Noise In Pinned Photodiode Cmos Image Sensors
- doi: 10.1109/LED.2018.2839711
-
title: Long Exposure Time Noise in Pinned Photodiode
CMOS Image Sensors
- publisher: IEEE
- isbn:
- issn: 1558-0563
- rank: 2905
- access_type: LOCKED
- content_type: Journals
-
abstract: This letter focuses on a new noise source
within a pinned photodiode in complimentary metal-oxide-semiconductor
(CMOS) image sensors. The noise originates from the feedforward effect,
which is related to the barrier height under the transfer gate during
the exposure phase. TCAD simulations using the Monte Carlo method show
that the barrier height varies with CMOS process fluctuations even for
the same pixel design and applied voltage. Furthermore, a model
extending our previous work is proposed. The model results indicate that
a larger barrier height and shorter exposure time improve the noise
performance. The same conclusion can also be obtained from the
measurements of a prototype image sensor that can adjust the pixel
implants.
- article_number: 8362966
-
pdf_url:
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8362966
-
html_url:
https://ieeexplore.ieee.org/document/8362966/
-
abstract_url:
https://ieeexplore.ieee.org/document/8362966/
- publication_title: IEEE Electron Device Letters
- conference_location:
- conference_dates:
- publication_number: 55
- is_number: 8398557
- publication_year: 2018
- publication_date: July 2018
- start_page: 979
- end_page: 982
- citing_paper_count: 6
- citing_patent_count: 0
- download_count: 1205
- insert_date: 20180523
-
index_terms:
-
ieee_terms:
- Semiconductor device modeling
- CMOS image sensors
- Electric potential
- Photodiodes
- Semiconductor process modeling
- Monte Carlo methods
- CMOS process
-
author_terms:
- CMOS image sensor
- long exposure time noise
- Monte Carlo simulation
- feedforward effect
-
dynamic_index_terms:
- Exposure Time
- Image Sensor
- Camera Sensor
- PIN Photodiode
- Monte Carlo Simulation
- Monte Carlo Method
- Noise Sources
- Barrier Height
- Noise Performance
- Exposure Phase
- TCAD Simulation
- Spatial Domain
- Low Noise
- Solid Curve
- Influence Of Noise
- Dark Current
- Pixel Array
- Saturation Region
- Emission Current
- Knee Point
- Temporal Noise
- Level-2 Model
-
authors:
-
Author Name: Liqiang Han
Affiliation: School of Electrical and Information
Engineering, Tianjin University, Tianjin, China
Author URL:
https://ieeexplore.ieee.org/author/37085733626
ID: 37085733626
Order: 1
Author Affiliations:
-
School of Electrical and Information Engineering, Tianjin
University, Tianjin, China
-
Author Name: Jiangtao Xu
Affiliation: School of Microelectronics, Tianjin
University, Tianjin, China
Author URL:
https://ieeexplore.ieee.org/author/37577831800
ID: 37577831800
Order: 2
Author Affiliations:
-
School of Microelectronics, Tianjin University, Tianjin, China
Image Sensor
- sensor_type: CMOS
- resolution: Not specified
- dynamic_range: Not specified
- pixel_size: 15×15 μm²
- dark_current: 5 mV/s (at 301 K)
Optical Data
- focal_length: Not specified
- aperture: Not specified
- field_of_view: Not specified
- distortion: Not specified
Performance Metrics
-
noise: 3.5 mV_rms for Pixel A and 0.02 lux ×s for Pixel
B
Applications & Benefits
- cell_imaging: Not specified
- benefits: Not specified
Supporting Organizations
-
supported_by: National Natural Science Foundation of
China and Tianjin Research Program of Application Foundation and
Advanced Technology
Manuscript Details
- publication_date: July 2018
Relevancy Score
- score: 10
-
missing_fields:
- resolution
- dynamic_range
- focal_length
- aperture
- field_of_view
- distortion
- frame_rate
- signal_to_noise_ratio
- sensitivity
- shutter_speed
- power_consumption
- cell_imaging
- benefits
Processed JSON Filename
request_238750cf-5c46-4eb4-8b9c-ddf571fe1eac-long_exposure_time_noise_in_pinned_photodiode_cmos_image_sensors.json