Leakage Reduction In Advanced Image Sensors Using An Improved Rm Ab2rm C Scheme

• doi: 10.1109/JSEN.2011.2157123
• title: Leakage Reduction in Advanced Image Sensors Using an Improved ${\rm AB}^{2}{\rm C}$ Scheme
• publisher: IEEE
• isbn:
• issn: 2379-9153
• rank: 2866
• access_type: LOCKED
• content_type: Journals
• abstract: Static leakage currents in advanced CMOS processes have become the main source of power consumption in many of today's systems. This is especially true for systems with a large number of devices that are in a stable state for most of their operation time, such as image sensors and memory arrays. This paper introduces an improved adaptive bulk biasing control (AB2C) scheme for reduction of leakage currents during these “standby” periods in serially accessed arrays, while enabling device acceleration during active cycles. We provide a theoretical analysis of the AB2C operation, showing its advantages and limitations. The proposed scheme has been integrated with a test-case advanced wide dynamic range (WDR) image sensor with an on-chip memory. The scheme was applied to both the pixel and bitcell arrays, providing configurable leakage reduction and performance enhancement. An 80 nm test chip was fabricated with a 10 k pixel/bitcell test-case system and successfully tested, showing a 21% power reduction compared to a standard system and up to 44% compared to an accelerated system.
• article_number: 5771526
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5771526
• html_url: https://ieeexplore.ieee.org/document/5771526/
• abstract_url: https://ieeexplore.ieee.org/document/5771526/
• publication_title: IEEE Sensors Journal
• conference_location:
• conference_dates:
• publication_number: 7361
• is_number: 6145763
• publication_year: 2012
• publication_date: April 2012
• start_page: 773
• end_page: 784
• citing_paper_count: 3
• citing_patent_count: 0
• download_count: 1020
• insert_date: 20110519
• index_terms:
  • ieee_terms:
    • Threshold voltage
    • Image sensors
    • Pixel
    • Capacitance
    • Transistors
    • Equations
    • Random access memory
  • author_terms:
    • Advanced bulk biasing control
    • advanced image sensors
    • forward body biasing
    • leakage reduction
    • low power image sensors
    • low power SRAM
    • reverse body biasing
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Reduction In Leakage
    • Dynamic Range
    • Power Consumption
    • Ergogenic
    • Performance Enhancement
    • Advanced Processes
    • Promotion Process
    • Reduction In Power
    • CMOS Process
    • Pixel Array
    • Memory Array
    • Test Chip
    • Large Capacity
    • Large Capacitance
    • Voltage Drop
    • Potential Drop
    • IR Drop
    • Bias Voltage
    • Dynamic Performance
    • Dynamic Operation
    • Threshold Voltage
    • Capacitive Coupling
    • AC-coupled
    • Electrostatic Coupling
    • Forward Bias
    • Forward Voltage
    • Dynamic Power
    • Application Of Bias
    • Shift Register
    • Dynamic Power Consumption
    • Static Power Consumption
    • Bias Point
    • Sensor Pixel
    • Entire Row
    • Power Components
    • Advanced Sensors
• authors:
  • Author Name: Adam Teman
    Affiliation: Low Power Circuits and Systems Laboratory, VLSI Systems Center, Ben-Gurion University of the Negev, Beersheva, Israel
    Author URL: https://ieeexplore.ieee.org/author/37569751900
    ID: 37569751900
    Order: 1
    Author Affiliations:
    • Low Power Circuits and Systems Laboratory, VLSI Systems Center, Ben-Gurion University of the Negev, Beersheva, Israel
  • Author Name: Orly Yadid-Pecht
    Affiliation: Electrical Engineering Department, University of Calgary, AB, Canada
    Author URL: https://ieeexplore.ieee.org/author/38298354100
    ID: 38298354100
    Order: 2
    Author Affiliations:
    • Electrical Engineering Department, University of Calgary, AB, Canada
  • Author Name: Alexander Fish
    Affiliation: Low Power Circuits and Systems Laboratory, VLSI Systems Center, Ben-Gurion University of the Negev, Beersheva, Israel
    Author URL: https://ieeexplore.ieee.org/author/37268457100
    ID: 37268457100
    Order: 3
    Author Affiliations:
    • Low Power Circuits and Systems Laboratory, VLSI Systems Center, Ben-Gurion University of the Negev, Beersheva, Israel

Image Sensor

• sensor_type: CMOS
• resolution: 100x100 pixels
• dynamic_range: Wide Dynamic Range (WDR)
• pixel_size: 4.375x3.85 µm
• dark_current: Not specified

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• frame_rate: 30 fps
• power_consumption: 21% power reduction compared to standard system, 44% compared to accelerated system
• noise: Sources of noise include subthreshold leakage, temporal noise, and fixed-pattern noise.

Applications & Benefits

• cell_imaging: Used for various functions, such as image processing, target tracking, and dynamic range expansion, providing advantages in cost, speed, and power.
• benefits: Low power, adaptable leakage reduction, performance enhancement during active cycles.

Supporting Organizations

• supported_by: Ben-Gurion University, University of Calgary

Manuscript Details

• publication_date: April 2012

Relevancy Score

• score: 10
• missing_fields:
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed

Processed JSON Filename

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