Leakage Current Modeling Of Test Structures For Characterization Of Dark Current In Cmos Image Sensors

• doi: 10.1109/TED.2002.807249
• title: Leakage current modeling of test structures for characterization of dark current in CMOS image sensors
• publisher: IEEE
• isbn:
• issn: 1557-9646
• rank: 2867
• access_type: LOCKED
• content_type: Journals
• abstract: In this paper, we present an extensive study of leakage current mechanisms in diodes to model the dark current of various pixel architectures for active pixel CMOS image sensors. Dedicated test structures made in 0.35-/spl mu/m CMOS have been investigated to determine the various contributions to the leakage current. Three pixel variants with different photodiodes-n/sup +//pwell, n/sup +//nwell/p-substrate and p/sup +//nwell/p-substrate-are described. We found that the main part of the total dark current comes from the depletion of the photodiode edge at the surface. Furthermore, the source of the reset transistor contributes significantly to the total leakage current of a pixel. From the investigation of reverse current-voltage (I-V) characteristics, temperature dependencies of leakage current, and device simulations we found that for a wide depletion, such as n-well/p-well, thermal Shockley-Read-Hall generation is the main leakage mechanism, while for a junction with higher dopant concentrations, such as n/sup +//p-well or p/sup +//n-well, tunneling and impact ionization are the dominant mechanisms.
• article_number: 1185166
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=1185166
• html_url: https://ieeexplore.ieee.org/document/1185166/
• abstract_url: https://ieeexplore.ieee.org/document/1185166/
• publication_title: IEEE Transactions on Electron Devices
• conference_location:
• conference_dates:
• publication_number: 16
• is_number: 26588
• publication_year: 2003
• publication_date: Jan. 2003
• start_page: 77
• end_page: 83
• citing_paper_count: 86
• citing_patent_count: 3
• download_count: 3448
• insert_date: 20030310
• index_terms:
  • ieee_terms:
    • Leakage currents
    • Tunneling
    • Impact ionization
    • Integrated circuit modeling
    • Conductivity
    • Integrated circuit testing
    • Photodiodes
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Dark Current
    • Temperature Dependence
    • Total Current
    • Impact Ionization
    • Reverse Current
    • Opposite Currents
    • Device Simulation
    • Shockley–Read–Hall
    • Square Root
    • Straight Line
    • Low Voltage
    • Voltage-gated Channels
    • Voltage Dependence
    • Voltage-dependent Anion Channel 1
    • Voltage-gated Ion Channels
    • Depletion Region
    • Space Charge Region
    • Depletion Layer
    • Depletion Zone
    • Thermal Power Plants
    • Thermal Generation
    • Thermal Plants
    • Partial Contribution
    • Contribution Of Each Part
    • P-n Junction
    • Maximum Electric Field
    • Pixel Matrix
    • Pixel Matrices
    • Diffusion Current
    • Depletion Width
• authors:
  • Author Name: N.V. Loukianova
    Affiliation: Philips Semiconductors Image Sensors, Eindhoven, Netherlands
    Author URL: https://ieeexplore.ieee.org/author/37087627456
    ID: 37087627456
    Order: 1
    Author Affiliations:
    • Philips Semiconductors Image Sensors, Eindhoven, Netherlands
    • Mobile Display Systems, Philips Components, Heerlen, Netherlands
  • Author Name: H.O. Folkerts
    Affiliation: Philips Semiconductors Image Sensors, Eindhoven, Netherlands
    Author URL: https://ieeexplore.ieee.org/author/37992964500
    ID: 37992964500
    Order: 2
    Author Affiliations:
    • Philips Semiconductors Image Sensors, Eindhoven, Netherlands
  • Author Name: J.P.V. Maas
    Affiliation: Philips Semiconductors Image Sensors, Eindhoven, Netherlands
    Author URL: https://ieeexplore.ieee.org/author/37741353400
    ID: 37741353400
    Order: 3
    Author Affiliations:
    • Philips Semiconductors Image Sensors, Eindhoven, Netherlands
  • Author Name: D.W.E. Verbugt
    Affiliation: Philips Semiconductors Image Sensors, Eindhoven, Netherlands
    Author URL: https://ieeexplore.ieee.org/author/37352091200
    ID: 37352091200
    Order: 4
    Author Affiliations:
    • Philips Semiconductors Image Sensors, Eindhoven, Netherlands
  • Author Name: A.J. Mierop
    Affiliation: Philips Semiconductors Image Sensors, Eindhoven, Netherlands
    Author URL: https://ieeexplore.ieee.org/author/37294018800
    ID: 37294018800
    Order: 5
    Author Affiliations:
    • Philips Semiconductors Image Sensors, Eindhoven, Netherlands
  • Author Name: W. Hoekstra
    Affiliation: Philips Semiconductors Image Sensors, Eindhoven, Netherlands
    Author URL: https://ieeexplore.ieee.org/author/37378557000
    ID: 37378557000
    Order: 6
    Author Affiliations:
    • Philips Semiconductors Image Sensors, Eindhoven, Netherlands
  • Author Name: E. Roks
    Affiliation: Philips Semiconductors Image Sensors, Eindhoven, Netherlands
    Author URL: https://ieeexplore.ieee.org/author/37346914400
    ID: 37346914400
    Order: 7
    Author Affiliations:
    • Philips Semiconductors Image Sensors, Eindhoven, Netherlands
  • Author Name: A.J.P. Theuwissen
    Affiliation: Philips Semiconductors Image Sensors, Eindhoven, Netherlands
    Author URL: https://ieeexplore.ieee.org/author/37282956500
    ID: 37282956500
    Order: 8
    Author Affiliations:
    • Philips Semiconductors Image Sensors, Eindhoven, Netherlands
    • Delft University of Technnology, Delft, Netherlands

Image Sensor

• sensor_type: CMOS
• resolution: 5.6x5.6
• dynamic_range: Not specified
• pixel_size: 5.6 µm
• dark_current: Not specified

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

Applications & Benefits

• cell_imaging: CMOS image sensors are utilized in various applications including smartphones, medical devices, and automotive systems.
• benefits: CMOS image sensors enable digital imaging, improving dynamic range and reducing fixed pattern noise.

Supporting Organizations

• supported_by: Philips Semiconductors

Manuscript Details

• publication_date: Jan. 2003

Relevancy Score

• score: 10
• missing_fields:
  • dynamic_range
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise

Processed JSON Filename

request_241aa258-af9c-4088-9015-5518c4cb31f6-leakage_current_modeling_of_test_structures_for_characterization_of_dark_current_in_cmos_image_sensors.json