Laser Thermal Annealing Enabling Ultralow Thermal Budget Processes For 3D
Junctions Formation And Devices
- doi: 10.1109/IWJT.2012.6212810
-
title: Laser Thermal Annealing: Enabling ultra-low
thermal budget processes for 3D junctions formation and devices
- publisher: IEEE
- isbn: 978-1-4673-1256-1
- issn:
- partnum: 12EX6220
- rank: 2861
- access_type: LOCKED
- content_type: Conferences
-
abstract: Annealing of 3D architectures is one of the
major challenges for current and next generation devices for various
applications ranging from sensors, microprocessors or high density
memories. One of the most promising solutions is Laser Thermal Annealing
(LTA), an ultrafast and low thermal budget process already adopted in
production for passivation of BackSide Illuminated CMOS Imaging Sensors
(CIS) and Power Diodes and Transistors (IGBT). The high temperature
annealing required (>;1400°C) needs to be restrained to very thin layers
while keeping low temperature of underlying fragile layers and devices.
To achieve that, one needs to use a unique ultrafast annealing duration
(sub μsec) and a proper Laser wavelength. This enables to reach
metastable thermal processes, locking-in the electrical surface
properties of the semiconductor while not damaging buried devices. We
present a review of those new processes including recent development in
emerging memory applications where 3D vertical stack of functional
layers of devices is realized.
- article_number: 6212810
-
pdf_url:
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6212810
-
html_url:
https://ieeexplore.ieee.org/document/6212810/
-
abstract_url:
https://ieeexplore.ieee.org/document/6212810/
-
publication_title: 2012 12th International Workshop on
Junction Technology
- conference_location: Shanghai, China
- conference_dates: 14-15 May 2012
- publication_number: 6205554
- is_number: 6212790
- publication_year: 2012
- publication_date: 14-15 May 2012
- start_page: 57
- end_page: 62
- citing_paper_count: 8
- citing_patent_count: 2
- download_count: 779
- insert_date: 20120607
-
index_terms:
-
ieee_terms:
- Lasers
- Annealing
- Abstracts
- Three dimensional displays
- Absorption
- Junctions
- Silicon
-
dynamic_index_terms:
- Thermal Annealing
- Budget Process
- Thermal Budget
- Thin Layer
- Thermal Process
- Promising Solution
- Image Sensor
- Camera Sensor
- Power Devices
- Power Transistors
- Power Semiconductor Devices
- Device Layer
- High-temperature Annealing
- Low Budget
- Ultrafast Process
- Vertical Stacking
- Thermal Annealing Process
- Energy Density
- Temperature Gradient
- Thermal Gradient
- Device Performance
- Pulse Duration
- Electrical Contact
- Field Exposure
- Properties Of Junctions
- Laser Energy Density
- Doping Profile
- 3D Integration
- Top Hat
-
isbn_formats:
-
format: Online ISBN,
value: 978-1-4673-1256-1,
isbnType: New-2005
-
format: Print ISBN,
value: 978-1-4673-1258-5,
isbnType: New-2005
-
format: Electronic ISBN,
value: 978-1-4673-1257-8,
isbnType: New-2005
-
authors:
Image Sensor
- sensor_type: CMOS
- resolution: Not specified
- dynamic_range: Not specified
- pixel_size: Not specified
- dark_current: Not specified
Optical Data
- focal_length: Not specified
- aperture: Not specified
- field_of_view: Not specified
- distortion: Not specified
Performance Metrics
Applications & Benefits
-
cell_imaging: CMOS imaging sensors used in BackSide
Illuminated configurations for high sensitivity and performance.
-
benefits: High quantum efficiency, particularly in the
blue wavelength region, allowing for high-quality sensor performance.
Supporting Organizations
Manuscript Details
- publication_date: 14-15 May 2012
Relevancy Score
- score: 9
-
missing_fields:
- resolution
- dynamic_range
- pixel_size
- dark_current
- focal_length
- aperture
- field_of_view
- distortion
- frame_rate
- signal_to_noise_ratio
- sensitivity
- shutter_speed
- power_consumption
- noise
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