Largeformat Geigermode Avalanche Photodiode Arrays And Readout Circuits

• doi: 10.1109/JSTQE.2017.2736440
• title: Large-Format Geiger-Mode Avalanche Photodiode Arrays and Readout Circuits
• publisher: IEEE
• isbn:
• issn: 1558-4542
• rank: 2860
• access_type: LOCKED
• content_type: Journals
• abstract: Over the past 20 years, we have developed arrays of custom-fabricated silicon and InP Geiger-mode avalanche photodiode arrays, CMOS readout circuits to digitally count or time stamp single-photon detection events, and techniques to integrate these two components to make back-illuminated solid-state image sensors for lidar, optical communications, and passive imaging. Starting with 4 × 4 arrays, we have recently demonstrated 256 × 256 arrays, and are working to scale to megapixel-class imagers. In this paper, we review this progress and discuss key technical challenges to scaling to large format.
• article_number: 8007179
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8007179
• html_url: https://ieeexplore.ieee.org/document/8007179/
• abstract_url: https://ieeexplore.ieee.org/document/8007179/
• publication_title: IEEE Journal of Selected Topics in Quantum Electronics
• conference_location:
• conference_dates:
• publication_number: 2944
• is_number: 7985003
• publication_year: 2018
• publication_date: March-April 2018
• start_page: 1
• end_page: 10
• citing_paper_count: 36
• citing_patent_count: 0
• download_count: 2968
• insert_date: 20170810
• index_terms:
  • ieee_terms:
    • Avalanche photodiodes
    • Photonics
    • Silicon
    • Image sensors
    • Electric breakdown
    • Laser radar
  • author_terms:
    • Image sensors
    • Geiger-mode avalanche photodiodes
    • photon counting
    • lidar
  • dynamic_index_terms:
    • Avalanche Photodiode
    • Readout Circuit
    • Geiger-mode Avalanche Photodiode
    • Geiger Mode Avalanche Photodiode
    • Event Detection
    • Image Sensor
    • Camera Sensor
    • Time Stamp
    • Optical Communication
    • Passive Imaging
    • Focal Plane
    • Back Focal Plane
    • Large Array
    • Single Photon
    • Optical Signal
    • Parasitic Capacitance
    • Molecular Beam Epitaxy
    • Molecular-beam Epitaxy
    • Germanium Detector
    • HPGe
    • Silicon Detector
    • Semiconductor Detector
    • Silicon Strip Detectors
    • Spurious Effects
    • Spurious Events
    • Use Of Arrays
    • Digital Circuits
    • Digital Circuitry
    • CMOS Process
    • Operating Wavelength
    • Operation Wavelengths
    • Single-photon Avalanche Diode
    • Single Photon Avalanche Diode
    • Dark Count Rate
    • 3D Integration
    • Pixel Pitch
    • Wavefront Sensor
    • Microlenses
    • Micro Lens
    • Micro-lens
    • Voltage Swing
    • Circuit Architecture
    • Timing Jitter
    • Raw Image Data
• authors:
  • Author Name: Brian F. Aull
    Affiliation: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
    Author URL: https://ieeexplore.ieee.org/author/37374480100
    ID: 37374480100
    Order: 1
    Author Affiliations:
    • Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
  • Author Name: Erik K. Duerr
    Affiliation: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
    Author URL: https://ieeexplore.ieee.org/author/37563666800
    ID: 37563666800
    Order: 2
    Author Affiliations:
    • Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
  • Author Name: Jonathan P. Frechette
    Affiliation: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
    Author URL: https://ieeexplore.ieee.org/author/37670632500
    ID: 37670632500
    Order: 3
    Author Affiliations:
    • Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
  • Author Name: K. Alexander McIntosh
    Affiliation: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
    Author URL: https://ieeexplore.ieee.org/author/37324935100
    ID: 37324935100
    Order: 4
    Author Affiliations:
    • Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
  • Author Name: Daniel R. Schuette
    Affiliation: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
    Author URL: https://ieeexplore.ieee.org/author/37424765100
    ID: 37424765100
    Order: 5
    Author Affiliations:
    • Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
  • Author Name: Richard D. Younger
    Affiliation: Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
    Author URL: https://ieeexplore.ieee.org/author/37428203700
    ID: 37428203700
    Order: 6
    Author Affiliations:
    • Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA

Image Sensor

• sensor_type: CMOS
• resolution: 256x256
• dynamic_range: Not specified
• pixel_size: 25 μm (for the latest passive imager)
• dark_current: 500/s (for InGaAsP/InP GmAPDs)

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• frame_rate: 150 kframes/s (for sparsest returns)
• power_consumption: 0.5 W (typical for R7 chip)
• noise: shot noise due to dark count rate variance

Applications & Benefits

• cell_imaging: Applications include lidar, laser communications, and biomedical imaging.
• benefits: High pixel density, photon counting capability, low readout noise, high-speed operation.

Supporting Organizations

• supported_by: U.S. Air Force under Contract FA8721-05-C-0002 and/or Contract FA8702-15-D-0001.

Manuscript Details

• publication_date: March-April 2018

Relevancy Score

• score: 10

Processed JSON Filename

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