Lag Free Transfer Transistor In Cmos Image Sensor Pixel With A Nonuniform Doped Gate

• doi: 10.1109/EDSSC.2011.6117730
• title: Lag free transfer transistor in CMOS image sensor pixel with a non-uniform doped gate
• publisher: IEEE
• isbn: 978-1-4577-1996-7
• issn:
• partnum: 11EX5873
• rank: 2856
• access_type: LOCKED
• content_type: Conferences
• abstract: A transfer transistor structure achieving complete charge transfer in a CMOS image sensor pixel is proposed to eliminate image lag. This structure adopted double N implants for photodiode to ensure a wide channel of charge transfer, a surface P type preventing from dark current and especially a non-uniform doped poly-silicon gate to adjust the potential profile in channel. The simulation results show that if a light pulse of 10000lux illuminates for one integration cycle, the signal voltage of the following frame drops to 1/50000 of the first one. The electron density in N buried layer after charge transfer is around 108/cm3, far below the intrinsic value.
• article_number: 6117730
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6117730
• html_url: https://ieeexplore.ieee.org/document/6117730/
• abstract_url: https://ieeexplore.ieee.org/document/6117730/
• publication_title: 2011 IEEE International Conference of Electron Devices and Solid-State Circuits
• conference_location: Tianjin, China
• conference_dates: 17-18 Nov. 2011
• publication_number: 6108454
• is_number: 6117556
• publication_year: 2011
• publication_date: 17-18 Nov. 2011
• start_page: 1
• end_page: 2
• citing_paper_count: 2
• citing_patent_count: 0
• download_count: 694
• insert_date: 20111229
• index_terms:
  • ieee_terms:
    • Logic gates
    • Charge transfer
    • CMOS image sensors
    • Electric potential
    • Doping
    • Photodiodes
    • Transistors
  • author_terms:
    • charge transfer
    • CMOS Image sensor
    • Image lag
    • non-uniform doped gate
    • transfer gate
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Potential Profile
    • Dark Current
    • Complete Transfer
    • Buried Layer
    • Non-uniform Structure
    • Potential Pocket
    • PIN Photodiode
• isbn_formats:
  • format: Online ISBN, value: 978-1-4577-1996-7, isbnType: New-2005
  • format: Print ISBN, value: 978-1-4577-1998-1, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-4577-1997-4, isbnType: New-2005
• authors:
  • Author Name: Gao Zhiyuan
    Affiliation: School of Electronic Information and Engineering, Tianjin University, TJU, Tianjin, China
    Author URL: https://ieeexplore.ieee.org/author/37531742500
    ID: 37531742500
    Order: 1
    Author Affiliations:
    • School of Electronic Information and Engineering, Tianjin University, TJU, Tianjin, China
  • Author Name: Yao Suying
    Affiliation: School of Electronic Information and Engineering, Tianjin University, TJU, Tianjin, China
    Author URL: https://ieeexplore.ieee.org/author/37298371600
    ID: 37298371600
    Order: 2
    Author Affiliations:
    • School of Electronic Information and Engineering, Tianjin University, TJU, Tianjin, China
  • Author Name: Xu Jiangtao
    Affiliation: School of Electronic Information and Engineering, Tianjin University, TJU, Tianjin, China
    Author URL: https://ieeexplore.ieee.org/author/37541601300
    ID: 37541601300
    Order: 3
    Author Affiliations:
    • School of Electronic Information and Engineering, Tianjin University, TJU, Tianjin, China
  • Author Name: Li Binqiao
    Affiliation: School of Electronic Information and Engineering, Tianjin University, TJU, Tianjin, China
    Author URL: https://ieeexplore.ieee.org/author/37541298300
    ID: 37541298300
    Order: 4
    Author Affiliations:
    • School of Electronic Information and Engineering, Tianjin University, TJU, Tianjin, China
  • Author Name: Gao Cen
    Affiliation: School of Electronic Information and Engineering, Tianjin University, TJU, Tianjin, China
    Author URL: https://ieeexplore.ieee.org/author/38235914500
    ID: 38235914500
    Order: 5
    Author Affiliations:
    • School of Electronic Information and Engineering, Tianjin University, TJU, Tianjin, China

Image Sensor

• sensor_type: CMOS
• resolution: Not specified
• dynamic_range: Not specified
• pixel_size: Not specified
• dark_current: Not specified

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

Applications & Benefits

• cell_imaging: Enables digital imaging in various applications such as smartphones, medical devices, and automotive systems.
• benefits: Eliminates image lag, allowing for better performance in dynamic environments.

Supporting Organizations

• supported_by: National Nature Science Foundation of China under Grant (61036004), ASIC design centre of Tianjin University.

Manuscript Details

• publication_date: 17-18 Nov. 2011

Relevancy Score

• score: 9
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • dark_current
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise
  • focal_length
  • aperture
  • field_of_view
  • distortion

Processed JSON Filename

request_0ee0ad09-c01c-47b4-a3ac-b4d90c13bba7-lag_free_transfer_transistor_in_cmos_image_sensor_pixel_with_a_nonuniform_doped_gate.json