Junctionoptimized Spad With 506 Peak Pdp And 064 Cpsm2 Dcr At 2 V Excess Bias Voltage In 130 Nm Cmos

• doi: 10.1109/LED.2024.3356123
• title: Junction-Optimized SPAD With 50.6% Peak PDP and 0.64 cps/μm2 DCR at 2 V Excess Bias Voltage in 130 nm CMOS
• publisher: IEEE
• isbn:
• issn: 1558-0563
• rank: 2846
• access_type: LOCKED
• content_type: Journals
• abstract: This letter presents a frontside-illuminated single-photon avalanche diode (SPAD) with high peak photon detection probability (PDP), low dark count rate and low jitter. A retrograde doped and separated deep n-well (DNW) combined with a junction-optimized p-well within the photosensitive region achieves an STI-free structure, significantly minimizing the dark count rate caused by the etching traps and surface states. The visible spectrum’s high PDP is realized through the wide depletion region generated between the carefully modulated p-well and the DNW. Through a globally shared DNW structure, a ${16}\times {8}.{5}\,\,\mu \text{m}$ SPAD array is fabricated and characterized in a 130 nm CMOS process. The measured median breakdown voltage is 16.08 V. The proposed SPAD has a peak PDP of 50.6%, a DCR of 0.64 cps/ $\mu \text{m}^{{2}}$ , an afterpulse probability of 0.16%, and a jitter of 56 ps at an excess bias voltage of 2 V. Therefore, the proposed structure shows excellent potential for time-gated time-of-flight (ToF) and high dynamic range image sensor applications.
• article_number: 10409166
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10409166
• html_url: https://ieeexplore.ieee.org/document/10409166/
• abstract_url: https://ieeexplore.ieee.org/document/10409166/
• publication_title: IEEE Electron Device Letters
• conference_location:
• conference_dates:
• publication_number: 55
• is_number: 10449685
• publication_year: 2024
• publication_date: March 2024
• start_page: 308
• end_page: 311
• citing_paper_count: 4
• citing_patent_count: 0
• download_count: 923
• insert_date: 20240119
• index_terms:
  • ieee_terms:
    • Single-photon avalanche diodes
    • Electric fields
    • Photonics
    • Jitter
    • Electric breakdown
    • Junctions
    • Lasers
  • author_terms:
    • Light detection and ranging (LiDAR)
    • single photon avalanche diode (SPAD)
    • frontside-illuminated (FSI)
    • CMOS sensor
  • dynamic_index_terms:
    • Single-photon Avalanche Diode
    • Dark Count Rate
    • Excess Voltage
    • Excess Bias Voltage
    • Visible Light
    • Visible Region
    • Visible Spectrum
    • Surface States
    • Surface Conditions
    • Depletion Region
    • Space Charge Region
    • Depletion Layer
    • Depletion Zone
    • High Dynamic Range
    • CMOS Process
    • Avalanche Diode
    • Low Jitter
    • Oscilloscope
    • Dead Time
    • Lateral Diffusion
    • Inter-arrival Time
    • Peak Electric Field
    • Doping Profile
• authors:
  • Author Name: Yang Liu
    Affiliation: Key Laboratory of Analog Integrated Circuits and Systems (Ministry of Education), School of Integrated Circuits, Xidian University, Xi’an, China
    Author URL: https://ieeexplore.ieee.org/author/37085469390
    ID: 37085469390
    Order: 1
    Author Affiliations:
    • Key Laboratory of Analog Integrated Circuits and Systems (Ministry of Education), School of Integrated Circuits, Xidian University, Xi’an, China
  • Author Name: Ruiqi Fan
    Affiliation: Key Laboratory of Analog Integrated Circuits and Systems (Ministry of Education), School of Integrated Circuits, Xidian University, Xi’an, China
    Author URL: https://ieeexplore.ieee.org/author/37089907456
    ID: 37089907456
    Order: 2
    Author Affiliations:
    • Key Laboratory of Analog Integrated Circuits and Systems (Ministry of Education), School of Integrated Circuits, Xidian University, Xi’an, China
  • Author Name: Yihan Zhao
    Affiliation: Key Laboratory of Analog Integrated Circuits and Systems (Ministry of Education), School of Integrated Circuits, Xidian University, Xi’an, China
    Author URL: https://ieeexplore.ieee.org/author/37089682387
    ID: 37089682387
    Order: 3
    Author Affiliations:
    • Key Laboratory of Analog Integrated Circuits and Systems (Ministry of Education), School of Integrated Circuits, Xidian University, Xi’an, China
  • Author Name: Jin Hu
    Affiliation: Key Laboratory of Analog Integrated Circuits and Systems (Ministry of Education), School of Integrated Circuits, Xidian University, Xi’an, China
    Author URL: https://ieeexplore.ieee.org/author/37085868293
    ID: 37085868293
    Order: 4
    Author Affiliations:
    • Key Laboratory of Analog Integrated Circuits and Systems (Ministry of Education), School of Integrated Circuits, Xidian University, Xi’an, China
  • Author Name: Rui Ma
    Affiliation: Key Laboratory of Analog Integrated Circuits and Systems (Ministry of Education), School of Integrated Circuits, Xidian University, Xi’an, China
    Author URL: https://ieeexplore.ieee.org/author/37086336477
    ID: 37086336477
    Order: 5
    Author Affiliations:
    • Key Laboratory of Analog Integrated Circuits and Systems (Ministry of Education), School of Integrated Circuits, Xidian University, Xi’an, China
  • Author Name: Zhangming Zhu
    Affiliation: Key Laboratory of Analog Integrated Circuits and Systems (Ministry of Education), School of Integrated Circuits, Xidian University, Xi’an, China
    Author URL: https://ieeexplore.ieee.org/author/37407461600
    ID: 37407461600
    Order: 6
    Author Affiliations:
    • Key Laboratory of Analog Integrated Circuits and Systems (Ministry of Education), School of Integrated Circuits, Xidian University, Xi’an, China

Image Sensor

• sensor_type: CMOS
• resolution: 16 × 8.5 µm SPAD array
• dynamic_range: over 140 dB
• pixel_size: 1.5 µm
• dark_current: 0.64 cps/µm²

Optical Data

• focal_length: not specified
• aperture: not specified
• field_of_view: not specified
• distortion: not specified

Performance Metrics

Applications & Benefits

• cell_imaging: This SPAD shows potential for time-gated time-of-flight (ToF) and high dynamic range imaging applications.
• benefits: High peak photon detection probability (PDP) of 50.6%, low dark count rate (DCR) of 0.64 cps/µm², and low jitter measured at 56 ps.

Supporting Organizations

• supported_by: Scientific and Technological Innovation 2030 of China, National Natural Science Foundation of China, Fundamental Research Funds for the Central Universities

Manuscript Details

• publication_date: March 2024

Relevancy Score

• score: 9
• missing_fields:
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise

Processed JSON Filename

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