Isfets In Cmos And Emergent Trends In Instrumentation A Review

• doi: 10.1109/JSEN.2016.2585920
• title: ISFETs in CMOS and Emergent Trends in Instrumentation: A Review
• publisher: IEEE
• isbn:
• issn: 2379-9153
• rank: 2683
• access_type: LOCKED
• content_type: Journals
• abstract: Over the past decade, ion-sensitive field-effect transistors (ISFETs) have played a major role in enabling the fabrication of fully integrated CMOS-based chemical sensing systems. This has allowed several new application areas, with the most promising being the fields of ion imaging and full genome sequencing. This paper reviews the new trends in front-end topologies toward the design of ISFET sensing arrays in CMOS for these new applications. More than a decade after the review of the ISFET by Bergveld which summarized the state of the art in terms of device and early readout circuity, we describe the evolution in terms of device macromodel and identify the main sensor challenges for current designers. We analyze the techniques that have been reported for both ISFET instrumentation and compensation, and conclude that topologies are focusing on device adaptation for offset and drift cancellation, as opposed to system compensation which are often not as robust. Guidelines are provided to build a tailored CMOS ISFET array, emphasizing that the needs in terms of applications are the keys to selecting the right pixel architecture. Over the next few years, the race for the largest and densest array is likely to be put on hold to allow the research to focus on new pixel topologies, ultimately leading to the development of reliable and scalable arrays. A wide range of new applications are expected to motivate this paper for at least another decade.
• article_number: 7501581
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7501581
• html_url: https://ieeexplore.ieee.org/document/7501581/
• abstract_url: https://ieeexplore.ieee.org/document/7501581/
• publication_title: IEEE Sensors Journal
• conference_location:
• conference_dates:
• publication_number: 7361
• is_number: 7534941
• publication_year: 2016
• publication_date: Sept.1, 2016
• start_page: 6496
• end_page: 6514
• citing_paper_count: 199
• citing_patent_count: 1
• download_count: 4856
• insert_date: 20160628
• index_terms:
  • ieee_terms:
    • Sensors
    • CMOS integrated circuits
    • Logic gates
    • Chemicals
    • Threshold voltage
    • Instruments
    • Fabrication
  • author_terms:
    • ISFET
    • review
    • chemical sensor
    • trapped charge
    • drift
    • ISFET instrumentation
  • dynamic_index_terms:
    • Instrumentation
    • Backtracking
    • Ion-sensitive Field-effect Transistor
    • Macro Model
    • Ion Images
    • DNA Sequencing
    • Frame Rate
    • Threshold Voltage
    • Effective Capacity
    • Effective Capacitance
    • Human Genome Project
    • Human Genome Sequence
    • Reduction In Sensitivity
    • Chemical Sensors
    • External Processes
    • Sensor Noise
    • pH Sensitivity
    • Compensation Method
    • Charge Trapping
    • CMOS Technology
    • Dense Array
    • Moore’s Law
    • Compensation Technique
    • Flicker Noise
    • Time-to-digital Converter
    • Silicon Area
    • Noise Immunity
    • Electrical Behavior
    • Chemical Signals
    • Operation Mode
    • Measurement Time
    • Electrical Noise
    • Electronic Noise
    • Readout Method
• authors:
  • Author Name: Nicolas Moser
    Affiliation: Department of Electrical and Electronic Engineering, Institute of Biomedical Engineering, London, U.K.
    Author URL: https://ieeexplore.ieee.org/author/37085398603
    ID: 37085398603
    Order: 1
    Author Affiliations:
    • Department of Electrical and Electronic Engineering, Institute of Biomedical Engineering, London, U.K.
  • Author Name: Tor Sverre Lande
    Affiliation: Department of Electrical and Electronic Engineering, Institute of Biomedical Engineering, London, U.K.
    Author URL: https://ieeexplore.ieee.org/author/37284121100
    ID: 37284121100
    Order: 2
    Author Affiliations:
    • Department of Electrical and Electronic Engineering, Institute of Biomedical Engineering, London, U.K.
  • Author Name: Christofer Toumazou
    Affiliation: Department of Electrical and Electronic Engineering, Institute of Biomedical Engineering, London, U.K.
    Author URL: https://ieeexplore.ieee.org/author/37271540100
    ID: 37271540100
    Order: 3
    Author Affiliations:
    • Department of Electrical and Electronic Engineering, Institute of Biomedical Engineering, London, U.K.
  • Author Name: Pantelis Georgiou
    Affiliation: Department of Electrical and Electronic Engineering, Institute of Biomedical Engineering, London, U.K.
    Author URL: https://ieeexplore.ieee.org/author/37302145800
    ID: 37302145800
    Order: 4
    Author Affiliations:
    • Department of Electrical and Electronic Engineering, Institute of Biomedical Engineering, London, U.K.

Image Sensor

• sensor_type: CMOS
• resolution: not specified
• dynamic_range: not specified
• pixel_size: not specified
• dark_current: not specified

Optical Data

• focal_length: not specified
• aperture: not specified
• field_of_view: not specified
• distortion: not specified

Performance Metrics

Applications & Benefits

• cell_imaging: not specified
• benefits: enabling digital imaging in a variety of applications such as smartphones, medical devices, and automotive systems.

Supporting Organizations

• supported_by: not specified

Manuscript Details

• publication_date: Sept.1, 2016

Relevancy Score

• score: 8
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise
  • cell_imaging
  • benefits

Processed JSON Filename

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