Ion Implantation Technology For Image Sensors
- doi: 10.1109/IIT.2016.7882888
-
title: Ion Implantation Technology for Image Sensors
- publisher: IEEE
- isbn: 978-1-5090-2025-6
- issn:
- rank: 2836
- access_type: LOCKED
- content_type: Conferences
-
abstract: Image sensor technologies have been advanced
drastically and they brought fruitful success in the market. During the
image sensor development, ion implantation technologies have played
important roles; 1) Many ion implantation steps are applied to fabricate
specific structures, such as PPD (pinned photodiode), special isolation
structure, and to tune transistors at pixels. PPD, primary technology
for CCD (charge-coupled device) and CMOS image sensors, realizes low
dark current together with no image lag, low noise, and large
saturation. 2) High energy and precise angle implantations are needed to
obtain deep PD and deep doping isolation. 3) Image sensors are sensitive
to metal contamination. Therefore, the dark current spectroscopy using
image sensors can identify the metals and evaluate the metal density
precisely. To reduce dark current, less metal contamination is required,
together with the gettering technologies.
- article_number: 7882888
-
pdf_url:
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7882888
-
html_url:
https://ieeexplore.ieee.org/document/7882888/
-
abstract_url:
https://ieeexplore.ieee.org/document/7882888/
-
publication_title: 2016 21st International Conference
on Ion Implantation Technology (IIT)
- conference_location: Tainan, Taiwan
- conference_dates: 26-30 Sept. 2016
- publication_number: 7879975
- is_number: 7882830
- publication_year: 2016
- publication_date: 26-30 Sept. 2016
- start_page: 1
- end_page: 6
- citing_paper_count: 1
- citing_patent_count: 0
- download_count: 746
- insert_date: 20170323
-
index_terms:
-
ieee_terms:
- Dark current
- Metals
- Ion implantation
- CMOS image sensors
- Contamination
- Photodiodes
-
dynamic_index_terms:
- Ionizing Radiation
- Ion Irradiation
- Ion Implantation
- Image Sensor
- Camera Sensor
- Ion Implantation Technology
- CCD Camera
- Charge-coupled Device
- Low Noise
- Metal Contamination
- Dark Current
- Market Success
- Low Dark Current
- PIN Photodiode
- Digital Camera
- Recombination Rate
- Electron Hole Pairs
- Depletion Region
- Space Charge Region
- Depletion Layer
- Depletion Zone
- Smartphone Camera
- Phone Camera
- P-n Junction
- polySia
- Polycrystalline Silicon
- Polysilicon
- Complete Transfer
- Neutral Regions
- Attenuation Length
- Absorption Lengths
-
isbn_formats:
-
format: Print on Demand(PoD) ISBN,
value: 978-1-5090-2025-6,
isbnType: New-2005
-
format: Electronic ISBN,
value: 978-1-5090-2024-9,
isbnType: New-2005
-
authors:
-
Author Name: Nobukazu Teranishi
Affiliation: University of Hyogo, Hyogo, Japan
Author URL:
https://ieeexplore.ieee.org/author/37351891200
ID: 37351891200
Order: 1
Author Affiliations:
- University of Hyogo, Hyogo, Japan
- Shizuoka University, Hamamatsu, Japan
Image Sensor
- sensor_type: CMOS
- resolution: 1 μm-pixel
- dynamic_range: not specified
- pixel_size: 1 μm
- dark_current: 0.2 e- rms noise achieved
Optical Data
- focal_length: not specified
- aperture: not specified
- field_of_view: not specified
- distortion: not specified
Performance Metrics
Applications & Benefits
-
cell_imaging: Used in various applications such as
smartphones, medical devices, and automotive systems.
-
benefits: Conversion of light to electrical signals
enables digital imaging.
Supporting Organizations
-
supported_by: Sumitomo Heavy Industrials Ion Technology
Manuscript Details
- publication_date: 26-30 Sept. 2016
Relevancy Score
- score: 10
-
missing_fields:
- dynamic_range
- fill_factor
- quantum_efficiency
- readout_speed
- noise_sources
- analog_to_digital_conversion_techniques
- microlenses
- on_chip_colour_filters
- global_or_rolling_shutters
- backside_illumination
Processed JSON Filename
request_800f723d-33fe-4b16-8af5-a694f7a6af26-ion_implantation_technology_for_image_sensors.json