Investigations On An Ultrathin Bendable Monolithic Si Cmos Image Sensor
- doi: 10.1109/JSEN.2013.2254474
-
title: Investigations on an Ultra-Thin Bendable
Monolithic Si CMOS Image Sensor
- publisher: IEEE
- isbn:
- issn: 2379-9153
- rank: 2832
- access_type: LOCKED
- content_type: Journals
-
abstract: In this paper, theoretical as well as
experimental results of the investigations on a bendable ultrathin Si
monolithic CMOS image sensor are presented. The electro-optical behavior
of a thinned flexible CMOS active pixel sensor for the application of
uniaxial mechanical stress is theoretically and experimentally analyzed.
The necessity of a correlated double sampling readout scheme to achieve
a stress-independent operation is underlined. Optical as well as
electrical characteristics of standard photodiodes on ultrathin silicon
chips embedded into a polyimide foil under several bending
configurations are discussed and experimental data are presented.
Moreover, design rules for the stress-independent operation of a
flexible ultrathin image sensor are given and the thinning and the
encapsulation processes are shortly presented.
- article_number: 6484872
-
pdf_url:
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6484872
-
html_url:
https://ieeexplore.ieee.org/document/6484872/
-
abstract_url:
https://ieeexplore.ieee.org/document/6484872/
- publication_title: IEEE Sensors Journal
- conference_location:
- conference_dates:
- publication_number: 7361
- is_number: 6583958
- publication_year: 2013
- publication_date: Oct. 2013
- start_page: 3892
- end_page: 3900
- citing_paper_count: 5
- citing_patent_count: 0
- download_count: 580
- insert_date: 20130322
-
index_terms:
-
ieee_terms:
- Stress
- Silicon
- Photodiodes
- MOSFET
- Optical sensors
- Image sensors
-
author_terms:
- Flexible CMOS image sensor
- mechanical stress
- photodiodes
-
dynamic_index_terms:
- Image Sensor
- Camera Sensor
- Ultrathin Si
- Monolithic CMOS
- Mechanical Stress
- Active Sensors
- Application Of Stress
- Flexible Sensors
- Silicon Chip
- Negative Feedback
- Theoretical Analysis
- Electronic Devices
- Output Signal
- Compressive Stress
- Optoelectronic Devices
- Depletion Region
- Space Charge Region
- Depletion Layer
- Depletion Zone
- Use Of Feedback
- Feedback Manipulation
- Dark Current
- Silicon Surface
- Drain Current
- Thin Processes
- Bending Radius
- Bending Radii
- Readout Circuit
- Effective Mobility
- Drift Current
- Current Mirror
- Junction Capacitance
- Bipolar Transistor
- Bipolar Junction Transistor
- Collector Current
- Operational Amplifier
- Op-amp
- Design Techniques
-
authors:
-
Author Name: Georgios C. Dogiamis
Affiliation: University of Duisburg-Essen,
Duisburg, Germany
Author URL:
https://ieeexplore.ieee.org/author/37086015404
ID: 37086015404
Order: 1
Author Affiliations:
- University of Duisburg-Essen, Duisburg, Germany
-
Author Name: Bedrich J. Hosticka
Affiliation: University of Duisburg-Essen,
Duisburg, Germany
Author URL:
https://ieeexplore.ieee.org/author/37275079700
ID: 37275079700
Order: 2
Author Affiliations:
- University of Duisburg-Essen, Duisburg, Germany
-
Author Name: Anton Grabmaier
Affiliation: University of Duisburg-Essen,
Duisburg, Germany
Author URL:
https://ieeexplore.ieee.org/author/37588742500
ID: 37588742500
Order: 3
Author Affiliations:
- University of Duisburg-Essen, Duisburg, Germany
Image Sensor
- sensor_type: CMOS
- resolution: 15x15
- dynamic_range: Not specified
- pixel_size: Not specified
- dark_current: Not specified
Optical Data
- focal_length: Not specified
- aperture: Not specified
- field_of_view: Not specified
- distortion: Not specified
Performance Metrics
Applications & Benefits
-
cell_imaging: Enabled through the use of CMOS image
sensors in applications such as smartphones and medical devices.
-
benefits: Compact, flexible design and the ability to
operate under mechanical stress.
Supporting Organizations
-
supported_by: German Research Foundation (DFG) under
Grant GR 3328/5-1.
Manuscript Details
- publication_date: Oct. 2013
Relevancy Score
- score: 8
-
missing_fields:
- fill factor
- quantum efficiency
- readout speed
- temporal noise
- fixed-pattern noise
- analog-to-digital conversion techniques
- microlenses
- on-chip colour filters
- global or rolling shutters
- backside illumination
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