Inpixel Buriedchannel Source Follower In Cmos Image Sensors Exposed To Xray Radiation

• doi: 10.1109/ICSENS.2010.5689953
• title: In-pixel buried-channel source follower in CMOS image sensors exposed to X-ray radiation
• publisher: IEEE
• isbn: 978-1-4244-8168-2
• issn: 1930-0395
• partnum: 10CH38272
• rank: 2768
• access_type: LOCKED
• content_type: Conferences
• abstract: This paper presents a CMOS image sensor (CIS) with pinned-photodiode 5T active pixels which use an in-pixel buried channel source follower (BSF) with an optimized row selector (RS). According to our previous work, using in-pixel BSFs with optimized RS can achieve significant pixel dark random noise reduction, i.e. 50% reduction, specially for random telegraph signal (RTS) noise, and an increase of the pixel output swing and dynamic range. With significant dark random noise reduction, in order to evaluate the performance for perspective space or medical imaging application, this proposed pixel structure using 0.18μm CMOS image sensor process is also further characterized under X-ray radiation. The results show that X-ray radiation induces additional acceptor-like interface traps which will increase dark random noise of the BSF pixels, to make BSF pixels less sensitive to radiation exposure, further optimization is necessary.
• article_number: 5689953
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5689953
• html_url: https://ieeexplore.ieee.org/document/5689953/
• abstract_url: https://ieeexplore.ieee.org/document/5689953/
• publication_title: SENSORS, 2010 IEEE
• conference_location: Waikoloa, HI, USA
• conference_dates: 1-4 Nov. 2010
• publication_number: 5678851
• is_number: 5689839
• publication_year: 2010
• publication_date: 1-4 Nov. 2010
• start_page: 1649
• end_page: 1652
• citing_paper_count: 2
• citing_patent_count: 0
• download_count: 535
• insert_date: 20110120
• index_terms:
  • ieee_terms:
    • Pixel
    • Noise
    • Current measurement
    • Logic gates
    • CMOS image sensors
    • MOSFETs
  • dynamic_index_terms:
    • X-ray Irradiation
    • X-ray Radiation
    • Random Noise
    • Channel Noise
    • Radiation Exposure
    • Medical Imaging Applications
    • Dark Noise
    • Interface Trap
    • Output Pixel
    • Quantum Efficiency
    • Depletion Region
    • Space Charge Region
    • Depletion Layer
    • Depletion Zone
    • Gate Electrode
    • Increase In Noise
    • Gate Bias
    • CMOS Process
    • Average Noise
    • Node Voltage
• isbn_formats:
  • format: Online ISBN, value: 978-1-4244-8168-2, isbnType: New-2005
  • format: Print ISBN, value: 978-1-4244-8170-5, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-4244-8169-9, isbnType: New-2005
• authors:
  • Author Name: Yue Chen
    Affiliation: Electronic Instrumentation Laboratory, Delft University of Technnology, Delft, Netherlands
    Author URL: https://ieeexplore.ieee.org/author/37900416600
    ID: 37900416600
    Order: 1
    Author Affiliations:
    • Electronic Instrumentation Laboratory, Delft University of Technnology, Delft, Netherlands
  • Author Name: Jiaming Tan
    Affiliation: Electronic Instrumentation Laboratory, Delft University of Technnology, Delft, Netherlands
    Author URL: https://ieeexplore.ieee.org/author/37592981800
    ID: 37592981800
    Order: 2
    Author Affiliations:
    • Electronic Instrumentation Laboratory, Delft University of Technnology, Delft, Netherlands
  • Author Name: Xinyang Wang
    Affiliation: CMOSIS nv, Antwerp, Belgium
    Author URL: https://ieeexplore.ieee.org/author/37293620200
    ID: 37293620200
    Order: 3
    Author Affiliations:
    • CMOSIS nv, Antwerp, Belgium
  • Author Name: Adri J. Mierop
    Affiliation: DALSA B.V., Eindhoven, Netherlands
    Author URL: https://ieeexplore.ieee.org/author/37294018800
    ID: 37294018800
    Order: 4
    Author Affiliations:
    • DALSA B.V., Eindhoven, Netherlands
  • Author Name: Albert J.P. Theuwissen
    Affiliation: Harvest Imaging, Bree, Belgium
    Author URL: https://ieeexplore.ieee.org/author/37282956500
    ID: 37282956500
    Order: 5
    Author Affiliations:
    • Harvest Imaging, Bree, Belgium
    • Electronic Instrumentation Laboratory, Delft University of Technnology, Delft, Netherlands

Image Sensor

• sensor_type: CMOS
• resolution: 200 rows × 150 columns
• dynamic_range: 41.6 dB
• pixel_size: 10 μm
• dark_current: not specified

Optical Data

• focal_length: not specified
• aperture: not specified
• field_of_view: not specified
• distortion: not specified

Performance Metrics

• frame_rate: 17 fps
• signal_to_noise_ratio: 41.6 dB
• noise: 270 μVrms (before radiation), 700 μVrms (after 31 krad radiation)

Applications & Benefits

• cell_imaging: The sensor is characterized for medical imaging applications.
• benefits: The proposed pixels improve output swing by nearly 100% compared to standard nMOS transistor SSF, enhancing image quality in low-light conditions.

Supporting Organizations

• supported_by: Dutch technology foundation IOP Photonic Devices project; Philips Health Care; DALSA B.V.; TSMC.

Manuscript Details

• publication_date: 1-4 Nov. 2010

Relevancy Score

• score: 10

Processed JSON Filename

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