Highspeed Cmos Image Sensor Circuits With In Situ Frame Storage

• doi: 10.1109/TNS.2004.832584
• title: High-speed CMOS image sensor circuits with in situ frame storage
• publisher: IEEE
• isbn:
• issn: 1558-1578
• rank: 2644
• access_type: LOCKED
• content_type: Journals
• abstract: Two CMOS image sensor circuit prototypes equipped with in situ frame storage have been fabricated and tested. Capable of 4-400 M-frames/s and between 66 and 79 dB rms dynamic range, these developments are intended for the capture of fast, brief, transient events with high resolution. Applications include accelerator-based flash radiography such as proton radiography. The first is a small two-dimensional (2-D) prototype in which each pixel includes either a capacitive trans-impedance amplifier or a direct-integration source-follower front end, followed by an array of 64 frame storage sample capacitors and associated readout electronics. The acquisition of either 32 frames using correlated double sampling (CDS) at 4 M-frames/s, or 64 frames without CDS at up to 10.5 M-frames/s (-3 dB), and up to 13 b dynamic range was achieved. The second is a monolithic solid state "streak camera", a 1-D linear array of 150 photodiodes, with a 150-frame analog storage array. This device reached 400-M-frames/s operation with electrical test inputs, at least 100-M-frames/s operation with optical inputs, and achieves over 11 b of dynamic range. These circuits demonstrate the high performance possible with CMOS sensor circuits containing in situ frame storage.
• article_number: 1323745
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=1323745
• html_url: https://ieeexplore.ieee.org/document/1323745/
• abstract_url: https://ieeexplore.ieee.org/document/1323745/
• publication_title: IEEE Transactions on Nuclear Science
• conference_location:
• conference_dates:
• publication_number: 23
• is_number: 29304
• publication_year: 2004
• publication_date: Aug. 2004
• start_page: 1648
• end_page: 1656
• citing_paper_count: 36
• citing_patent_count: 7
• download_count: 1004
• insert_date: 20040816
• index_terms:
  • ieee_terms:
    • Image storage
    • CMOS image sensors
    • Circuit testing
    • Dynamic range
    • Prototypes
    • Radiography
    • Acceleration
    • Protons
    • Two dimensional displays
    • Optical amplifiers
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Sensor Circuit
    • High-speed CMOS
    • Dynamic Range
    • Front End
    • Electrical Input
    • Streak Camera
    • Time Constant
    • Frame Rate
    • Sample Holder
    • Power Distribution
    • Focal Plane
    • Back Focal Plane
    • Noise Sources
    • Thermal Noise
    • Current Noise
    • Noise Power
    • Capacity Of Samples
    • Equivalent Resistance
    • Shot Noise
    • Poisson Noise
    • Inductive Load
    • Load Capacitance
    • Noise Analysis
    • Maximum Frame Rate
    • Maximal Frame
    • Noise Spectral Density
    • Small-signal Model
    • Noise Density
    • Dominant Pole
    • Unity Gain
    • Resistive Switching
    • Noise Contribution
• authors:
  • Author Name: S. Kleinfelder
    Affiliation: Department of Electrical and Computer Engineering, University of California, Irvine, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/37278135600
    ID: 37278135600
    Order: 1
    Author Affiliations:
    • Department of Electrical and Computer Engineering, University of California, Irvine, CA, USA
  • Author Name: Yandong Chen
    Affiliation: Department of Electrical and Computer Engineering, University of California, Irvine, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/37085965828
    ID: 37085965828
    Order: 2
    Author Affiliations:
    • Department of Electrical and Computer Engineering, University of California, Irvine, CA, USA
  • Author Name: K. Kwiatkowski
    Affiliation: Physics Division, Los Alamos National Laboratory, Los Alamos, NM, USA
    Author URL: https://ieeexplore.ieee.org/author/37278107800
    ID: 37278107800
    Order: 3
    Author Affiliations:
    • Physics Division, Los Alamos National Laboratory, Los Alamos, NM, USA
  • Author Name: A. Shah
    Affiliation: Department of Electrical and Computer Engineering, University of California, Irvine, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/37277569900
    ID: 37277569900
    Order: 4
    Author Affiliations:
    • Department of Electrical and Computer Engineering, University of California, Irvine, CA, USA

Image Sensor

• sensor_type: CMOS
• resolution: 12x12 pixels
• dynamic_range: 79 dB
• pixel_size: 200 µm
• dark_current: not specified

Optical Data

• focal_length: not specified
• aperture: not specified
• field_of_view: not specified
• distortion: not specified

Performance Metrics

• frame_rate: up to 10.5 MHz (with 3 dB gain attenuation) and 4 MHz (CDS mode)
• sensitivity: 13 b dynamic range (specifically mentioned for various modes)
• power_consumption: 26 µW per CTIA pixel and 10 µW per source-follower pixel
• noise: 201 µV

Applications & Benefits

• cell_imaging: intended for fast, brief, transient events such as proton radiography
• benefits: high-speed imaging with in situ frame storage, reduced output bandwidth bottlenecks

Supporting Organizations

• supported_by: University of California, Irvine; Los Alamos National Laboratory

Manuscript Details

• publication_date: Aug. 2004

Relevancy Score

• score: 10
• missing_fields:
  • fill factor
  • quantum efficiency
  • readout speed
  • noise sources
  • analog-to-digital conversion techniques
  • microlenses
  • on-chip color filters
  • global or rolling shutters
  • backside illumination

Processed JSON Filename

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