Highsensitivity And Nocrosstalk Pixel Technology For Embedded Cmos Image Sensor

• doi: 10.1109/16.954458
• title: High-sensitivity and no-crosstalk pixel technology for embedded CMOS image sensor
• publisher: IEEE
• isbn:
• issn: 1557-9646
• rank: 2641
• access_type: LOCKED
• content_type: Journals
• abstract: A high-photosensitivity and no-crosstalk pixel technology has been developed for an embedded active-pixel CMOS image sensor, by using a 0.35-/spl mu/m CMOS logic process. To increase the photosensitivity, we developed a deep p-well photodiode and an antireflective film, consisting of Si/sub 3/N/sub 4/ film, for the photodiode surface. To eliminate the high voltage required for the reset transistor in the pixel, we used a depletion-type transistor as the reset transistor. The reset transistor also operates as an overflow control gate, which enables antiblooming overflow when excess charge is generated in the photodiode by high-illumination conditions. To suppress pixel crosstalk caused by obliquely incident light, a double-metal photoshield was used, while crosstalk caused by electron diffusion in the substrate was suppressed by using the deep p-well photodiode. A 1/3-in 330-k-pixel active-pixel CMOS image sensor was fabricated using this technology. A sensitivity improvement of 110% for 550-nm incident light was obtained by using the deep p-well photodiode, while an improvement of 24% was obtained by using the antireflective film. The pixel crosstalk was suppressed to less than 1% throughout the range of visible light.
• article_number: 954458
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=954458
• html_url: https://ieeexplore.ieee.org/document/954458/
• abstract_url: https://ieeexplore.ieee.org/document/954458/
• publication_title: IEEE Transactions on Electron Devices
• conference_location:
• conference_dates:
• publication_number: 16
• is_number: 20640
• publication_year: 2001
• publication_date: Oct. 2001
• start_page: 2221
• end_page: 2227
• citing_paper_count: 42
• citing_patent_count: 43
• download_count: 1524
• insert_date: 20020807
• index_terms:
  • ieee_terms:
    • Photodiodes
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • High Voltage
    • Higher Tendency
    • Antireflection
    • Excess Charge
    • Visible Light Range
    • Electron Diffusion
    • Voltage-gated
    • Gate Voltage
    • Surface States
    • Surface Conditions
    • Analog-to-digital Converter
    • Analog-to-digital
    • Digital-to-analog Converter
    • Longer Wavelengths
    • Deep Structure
    • Metal Layer
    • Spectral Response
    • Deep Regions
    • Small Pixel
• authors:
  • Author Name: M. Furumiya
    Affiliation: ULSI Device Development Division, NEC Corporation Limited, Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37351893600
    ID: 37351893600
    Order: 1
    Author Affiliations:
    • ULSI Device Development Division, NEC Corporation Limited, Kanagawa, Japan
  • Author Name: H. Ohkubo
    Affiliation: ULSI Device Development Division, NEC Corporation Limited, Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37346373200
    ID: 37346373200
    Order: 2
    Author Affiliations:
    • ULSI Device Development Division, NEC Corporation Limited, Kanagawa, Japan
  • Author Name: Y. Muramatsu
    Affiliation: ULSI Device Development Division, NEC Corporation Limited, Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37739351100
    ID: 37739351100
    Order: 3
    Author Affiliations:
    • ULSI Device Development Division, NEC Corporation Limited, Kanagawa, Japan
  • Author Name: S. Kurosawa
    Affiliation: ULSI Device Development Division, NEC Corporation Limited, Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37337818000
    ID: 37337818000
    Order: 4
    Author Affiliations:
    • ULSI Device Development Division, NEC Corporation Limited, Kanagawa, Japan
  • Author Name: F. Okamoto
    Affiliation: ULSI Device Development Division, NEC Corporation Limited, Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37346415800
    ID: 37346415800
    Order: 5
    Author Affiliations:
    • ULSI Device Development Division, NEC Corporation Limited, Kanagawa, Japan
  • Author Name: Y. Fujimoto
    Affiliation: ULSI Device Development Division, NEC Corporation Limited, Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37734139200
    ID: 37734139200
    Order: 6
    Author Affiliations:
    • ULSI Device Development Division, NEC Corporation Limited, Kanagawa, Japan
  • Author Name: Y. Nakashiba
    Affiliation: ULSI Device Development Division, NEC Corporation Limited, Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37351891600
    ID: 37351891600
    Order: 7
    Author Affiliations:
    • ULSI Device Development Division, NEC Corporation Limited, Kanagawa, Japan

Image Sensor

• sensor_type: CMOS
• resolution: 330k pixels
• dynamic_range: 51 dB
• pixel_size: 7.4 µm
• dark_current: not specified

Optical Data

• focal_length: not specified
• aperture: not specified
• field_of_view: not specified
• distortion: not specified

Performance Metrics

• frame_rate: 12.27 MHz
• sensitivity: 1090 mV/lx·s
• power_consumption: 69 mW

Applications & Benefits

• cell_imaging: active-pixel CMOS image sensors are suitable for various applications including smartphones and medical devices.
• benefits: high sensitivity, low power consumption, and no crosstalk

Supporting Organizations

• supported_by: NEC Corporation

Manuscript Details

• publication_date: Oct. 2001

Relevancy Score

• score: 10

Processed JSON Filename

request_29eefd7f-29b9-474d-b9ce-07ada90130cb-highsensitivity_and_nocrosstalk_pixel_technology_for_embedded_cmos_image_sensor.json