Highperformance Backilluminated Threedimensional Stacked Singlephoton Avalanche Diode Implemented In 45Nm Cmos Technology

• doi: 10.1109/JSTQE.2018.2827669
• title: High-Performance Back-Illuminated Three-Dimensional Stacked Single-Photon Avalanche Diode Implemented in 45-nm CMOS Technology
• publisher: IEEE
• isbn:
• issn: 1558-4542
• rank: 2622
• access_type: OPEN_ACCESS
• content_type: Journals
• abstract: We present a high-performance back-illuminated three-dimensional stacked single-photon avalanche diode (SPAD), which is implemented in 45-nm CMOS technology for the first time. The SPAD is based on a P+/Deep N-well junction with a circular shape, for which N-well is intentionally excluded to achieve a wide depletion region, thus enabling lower tunneling noise and better timing jitter as well as a higher photon detection efficiency and a wider spectrum. In order to prevent premature edge breakdown, a P-type guard ring is formed at the edge of the junction, and it is optimized to achieve a wider photon-sensitive area. In addition, metal-1 is used as a light reflector to improve the detection efficiency further in backside illumination. With the optimized 3-D stacked 45-nm CMOS technology for back-illuminated image sensors, the proposed SPAD achieves a dark count rate of 55.4 cps/μm2 and a photon detection probability of 31.8% at 600 nm and over 5% in the 420-920 nm wavelength range. The jitter is 107.7 ps full width at half-maximum with negligible exponential diffusion tail at 2.5 V excess bias voltage at room temperature. To the best of our knowledge, these are the best results ever reported for any back-illuminated 3-D stacked SPAD technologies.
• article_number: 8338386
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8338386
• html_url: https://ieeexplore.ieee.org/document/8338386/
• abstract_url: https://ieeexplore.ieee.org/document/8338386/
• publication_title: IEEE Journal of Selected Topics in Quantum Electronics
• conference_location:
• conference_dates:
• publication_number: 2944
• is_number: 8310969
• publication_year: 2018
• publication_date: Nov.-Dec. 2018
• start_page: 1
• end_page: 9
• citing_paper_count: 60
• citing_patent_count: 0
• download_count: 7650
• insert_date: 20180416
• index_terms:
  • ieee_terms:
    • CMOS technology
    • Photonics
    • Junctions
    • Standards
    • Tunneling
    • Three-dimensional displays
    • Doping
  • author_terms:
    • Avalanche photodiode (APD)
    • CMOS image sensor
    • detector
    • Geiger-mode avalanche photodiode (G-APD)
    • image sensor
    • integrated optics device
    • integrated photonics
    • light detection and ranging (LiDAR)
    • low light level
    • optical sensor
    • photodiode
    • photomultiplier
    • photon counting
    • photon timing
    • semiconductor
    • sensor
    • silicon
    • single-photon avalanche diode (SPAD)
    • single-photon imaging
    • standard CMOS technology
    • three-dimensional fabrication
    • three-dimensional vision
  • dynamic_index_terms:
    • CMOS Technology
    • Single-photon Avalanche Diode
    • Single Photon Avalanche Diode
    • 45-nm Technology
    • 45-nm CMOS Technology
    • Wide Spectrum
    • Detection Efficiency
    • Image Sensor
    • Camera Sensor
    • Depletion Region
    • Space Charge Region
    • Depletion Layer
    • Depletion Zone
    • Timing Jitter
    • High Detection Efficiency
    • Dark Count Rate
    • High Voltage
    • Higher Tendency
    • Active Region
    • Activation Energy
    • Single-photon Emission Computed Tomography
    • SPECT
    • Doping Concentration
    • Dead Time
    • Fill Factor
    • Standard Technology
    • Parasitic Capacitance
    • Doping Profile
    • 65-nm CMOS
    • TCAD Simulation
    • Fluorescence Lifetime Imaging Microscopy
    • FLIM
    • Fluorescence Lifetime Imaging
    • Technology Node
    • Advanced Driver Assistance Systems
    • Advanced Driver-assistance Systems
    • Driver Assistance Systems
    • Dark Current
    • Time-correlated Single-photon Counting
    • TCSPC
    • Time-correlated Single Photon Counting
    • Thermal Power Plants
    • Thermal Generation
    • Thermal Plants
    • Low Dark Current
• authors:
  • Author Name: Myung-Jae Lee
    Affiliation: Institute of Microengineering, École Polytechnique Fédérale de Lausanne, Neuchâtel, Switzerland
    Author URL: https://ieeexplore.ieee.org/author/37598674000
    ID: 37598674000
    Order: 1
    Author Affiliations:
    • Institute of Microengineering, École Polytechnique Fédérale de Lausanne, Neuchâtel, Switzerland
  • Author Name: Augusto Ronchini Ximenes
    Affiliation: Department of Quantum Engineering, Delft University of Technology, Delft, The Netherlands
    Author URL: https://ieeexplore.ieee.org/author/37945782200
    ID: 37945782200
    Order: 2
    Author Affiliations:
    • Department of Quantum Engineering, Delft University of Technology, Delft, The Netherlands
  • Author Name: Preethi Padmanabhan
    Affiliation: Institute of Microengineering, École Polytechnique Fédérale de Lausanne, Neuchâtel, Switzerland
    Author URL: https://ieeexplore.ieee.org/author/37086329690
    ID: 37086329690
    Order: 3
    Author Affiliations:
    • Institute of Microengineering, École Polytechnique Fédérale de Lausanne, Neuchâtel, Switzerland
  • Author Name: Tzu-Jui Wang
    Affiliation: Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
    Author URL: https://ieeexplore.ieee.org/author/38238881800
    ID: 38238881800
    Order: 4
    Author Affiliations:
    • Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
  • Author Name: Kuo-Chin Huang
    Affiliation: Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
    Author URL: https://ieeexplore.ieee.org/author/37085435994
    ID: 37085435994
    Order: 5
    Author Affiliations:
    • Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
  • Author Name: Yuichiro Yamashita
    Affiliation: Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
    Author URL: https://ieeexplore.ieee.org/author/37085635006
    ID: 37085635006
    Order: 6
    Author Affiliations:
    • Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
  • Author Name: Dun-Nian Yaung
    Affiliation: Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
    Author URL: https://ieeexplore.ieee.org/author/37283323200
    ID: 37283323200
    Order: 7
    Author Affiliations:
    • Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
  • Author Name: Edoardo Charbon
    Affiliation: Institute of Microengineering, École Polytechnique Fédérale de Lausanne, Neuchâtel, Switzerland
    Author URL: https://ieeexplore.ieee.org/author/37271353200
    ID: 37271353200
    Order: 8
    Author Affiliations:
    • Institute of Microengineering, École Polytechnique Fédérale de Lausanne, Neuchâtel, Switzerland

Image Sensor

• sensor_type: CMOS
• resolution: Not specified
• dynamic_range: Not specified
• pixel_size: 12.5 µm (active area diameter)
• dark_current: 55.4 cps/µm²

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• sensitivity: Maximum photon detection probability of 31.8% at 600 nm
• noise: Low dark current in the pA range; Jitter of 107.7 ps full width at half maximum (FWHM)

Applications & Benefits

• cell_imaging: Applications include LiDAR in advanced driver-assistance systems (ADAS), autonomous vehicles, service drones, and biomedical imaging techniques like PET and SPECT.
• benefits: High performance, low noise, high efficiency, and high timing resolution.

Supporting Organizations

• supported_by: Supported in part by the grant of the Swiss National Science Foundation.

Manuscript Details

• publication_date: Nov.-Dec. 2018

Relevancy Score

• score: 10

Processed JSON Filename

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