High Total Ionizing Dose Effects On Backsideilluminated Cmos Image Sensors

• doi: 10.1109/TNS.2024.3466180
• title: High Total Ionizing Dose Effects on Backside-Illuminated CMOS Image Sensors
• publisher: IEEE
• isbn:
• issn: 1558-1578
• rank: 2590
• access_type: LOCKED
• content_type: Journals
• abstract: We recently evaluate the high total ionizing dose (TID) effects on 0.18- $\mu $ m backside-illuminated CMOS image sensors (BSI CISs) with different epitaxial layer thicknesses and backside oxide passivation techniques. $\gamma $ -irradiated device exhibits a huge dark current increase and quantum efficiency (QE) degradation. Moreover, a significant dark current nonuniformity on the whole array is observed at high TID. Results show that the BSI CIS does not capture images and all the functionality is lost after 4 Mrad(SiO2). It is observed that BSI CIS using Al2O3 film as the passivation technique is proven to be more efficient in mitigating high TID effects compared to the imagers using boron implant, suggesting that passivation technique options play a crucial role in determining the performance of BSI CIS at high TID level.
• article_number: 10689447
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10689447
• html_url: https://ieeexplore.ieee.org/document/10689447/
• abstract_url: https://ieeexplore.ieee.org/document/10689447/
• publication_title: IEEE Transactions on Nuclear Science
• conference_location:
• conference_dates:
• publication_number: 23
• is_number: 10754783
• publication_year: 2024
• publication_date: Nov. 2024
• start_page: 2393
• end_page: 2399
• citing_paper_count: 0
• citing_patent_count: 0
• download_count: 223
• insert_date: 20240923
• index_terms:
  • ieee_terms:
    • Degradation
    • Dark current
    • Transistors
    • Electrons
    • Dielectrics
    • Passivation
    • Epitaxial layers
  • author_terms:
    • Backside-illuminated CMOS image sensors (BSI CISs)
    • charge-to-voltage conversion factor (CVF)
    • dark current
    • dark current nonuniformity
    • high total ionizing dose (TID)
    • quantum efficiency (QE)
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Dose Concentration
    • Absorbed Dose
    • Total Ionizing Dose
    • Total Ionizing Dose Effect
    • Irradiation
    • Quantum Efficiency
    • Dark Current
    • Epitaxial Layer
    • Epilayer
    • Passive Techniques
    • Al2O3 Film
    • Important Impact
    • Space Exploration
    • Space Missions
    • Metal Layer
    • Nuclear Power Plant
    • Nuclear Facilities
    • Nuclear Plant
    • Depletion Region
    • Space Charge Region
    • Depletion Layer
    • Depletion Zone
    • Number Of Charges
    • Interface States
    • Interface Conditions
    • Charge Trapping
    • Pixel Array
    • Gate Oxide
    • Readout Circuit
    • Output Pixel
    • PIN Photodiode
• authors:
  • Author Name: Bingkai Liu
    Affiliation: State Key Laboratory of Functional Materials and Devices for Special Environmental Conditions, Xinjiang Key Laboratory of Extreme Environment Electronics, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Ürümqi, China
    Author URL: https://ieeexplore.ieee.org/author/37088465688
    ID: 37088465688
    Order: 1
    Author Affiliations:
    • State Key Laboratory of Functional Materials and Devices for Special Environmental Conditions, Xinjiang Key Laboratory of Extreme Environment Electronics, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Ürümqi, China
  • Author Name: Yudong Li
    Affiliation: State Key Laboratory of Functional Materials and Devices for Special Environmental Conditions, Xinjiang Key Laboratory of Extreme Environment Electronics, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Ürümqi, China
    Author URL: https://ieeexplore.ieee.org/author/37085889938
    ID: 37085889938
    Order: 2
    Author Affiliations:
    • State Key Laboratory of Functional Materials and Devices for Special Environmental Conditions, Xinjiang Key Laboratory of Extreme Environment Electronics, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Ürümqi, China
  • Author Name: Lin Wen
    Affiliation: State Key Laboratory of Functional Materials and Devices for Special Environmental Conditions, Xinjiang Key Laboratory of Extreme Environment Electronics, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Ürümqi, China
    Author URL: https://ieeexplore.ieee.org/author/37086255778
    ID: 37086255778
    Order: 3
    Author Affiliations:
    • State Key Laboratory of Functional Materials and Devices for Special Environmental Conditions, Xinjiang Key Laboratory of Extreme Environment Electronics, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Ürümqi, China
  • Author Name: Jie Feng
    Affiliation: State Key Laboratory of Functional Materials and Devices for Special Environmental Conditions, Xinjiang Key Laboratory of Extreme Environment Electronics, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Ürümqi, China
    Author URL: https://ieeexplore.ieee.org/author/37090004431
    ID: 37090004431
    Order: 4
    Author Affiliations:
    • State Key Laboratory of Functional Materials and Devices for Special Environmental Conditions, Xinjiang Key Laboratory of Extreme Environment Electronics, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Ürümqi, China
  • Author Name: Yulong Cai
    Affiliation: Innovation Academy for Microsatellites of Chinese Academy of Sciences, Shanghai, China
    Author URL: https://ieeexplore.ieee.org/author/37088466146
    ID: 37088466146
    Order: 5
    Author Affiliations:
    • Innovation Academy for Microsatellites of Chinese Academy of Sciences, Shanghai, China
  • Author Name: Qi Guo
    Affiliation: State Key Laboratory of Functional Materials and Devices for Special Environmental Conditions, Xinjiang Key Laboratory of Extreme Environment Electronics, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Ürümqi, China
    Author URL: https://ieeexplore.ieee.org/author/37089389844
    ID: 37089389844
    Order: 6
    Author Affiliations:
    • State Key Laboratory of Functional Materials and Devices for Special Environmental Conditions, Xinjiang Key Laboratory of Extreme Environment Electronics, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Ürümqi, China

Image Sensor

• sensor_type: CMOS
• resolution: 2048x2048 pixels
• dynamic_range: Not specified
• pixel_size: 11 µm
• dark_current: 162.2 e-/s (CIS1), 312.5 e-/s (CIS2)

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

Applications & Benefits

• cell_imaging: Used in space imaging missions due to higher quantum efficiency and sensitivity
• benefits: Improved performance in high total ionizing dose environments with enhanced backside illumination techniques.

Supporting Organizations

• supported_by: National Natural Science Foundation of China, Tian Chi Ying Cai Project, West Light Talent Training Plan, Natural Science Foundation of Xinjiang Uygur Autonomous Region.

Manuscript Details

• publication_date: Nov. 2024

Relevancy Score

• score: 8
• missing_fields:
  • dynamic_range
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise

Processed JSON Filename

request_128b04c4-ee16-4665-8fff-8f205a0dfa8d-high_total_ionizing_dose_effects_on_backsideilluminated_cmos_image_sensors.json