High Responsivity Photosensor Using Gatebody Tied Soi Mosfet

• doi: 10.1109/SOI.1998.723155
• title: High responsivity photo-sensor using gate-body tied SOI MOSFET
• publisher: IEEE
• isbn: 0-7803-4500-2
• issn: 1078-621X
• partnum: 98CH36199
• rank: 2605
• access_type: LOCKED
• content_type: Conferences
• abstract: SOI technology has proven to be advantageous in many applications compared to conventional bulk technology. However, the progress for use of SOI technology in low power imaging applications is relatively slow, despite the significant advancements achieved in bulk CMOS active pixel sensing circuits. It is difficult to fabricate optical sensors on SOI substrates due to the limited depth of silicon available on the top film, resulting in limited photon absorption capability. To overcome such limitations, CMOS compatible devices with self-amplification have been reported (Zhang et al. 1997; Yamamoto et al. 1996). However, the amplification is still not very satisfactory. In this paper, we have investigated the performance of a newly developed gate-body tied SOI MOSFET optical sensor fabricated with a DTMOS (dynamic threshold MOSFET) process (Assaderaghil et al. IEDM94, pp. 809-12, 1994). With dimensions of 5 /spl mu/m width by 2 /spl mu/m length, the optical current generated is of the order of micro-amperes, which can be directly read out for processing. The optical current can be further increased by reducing the channel length, and thus dimension reduction and performance enhancement can be achieved at the same time.
• article_number: 723155
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=723155
• html_url: https://ieeexplore.ieee.org/document/723155/
• abstract_url: https://ieeexplore.ieee.org/document/723155/
• publication_title: 1998 IEEE International SOI Conference Proceedings (Cat No.98CH36199)
• conference_location: Stuart, FL, USA
• conference_dates: 5-8 Oct. 1998
• publication_number: 5870
• is_number: 15630
• publication_year: 1998
• publication_date: 5-8 Oct. 1998
• start_page: 149
• end_page: 150
• citing_paper_count: 0
• citing_patent_count: 1
• download_count: 185
• insert_date: 20020806
• index_terms:
  • ieee_terms:
    • MOSFET circuits
    • Optical sensors
    • CMOS technology
    • Optical films
    • CMOS image sensors
    • Optical imaging
    • Pixel
    • Substrates
    • Silicon
    • Semiconductor films
  • dynamic_index_terms:
    • Optical Sensors
    • Channel Length
    • Current Injection
    • Dark Current
    • Amplification Factor
    • Optical Illumination
• isbn_formats:
  • format: Print ISBN, value: 0-7803-4500-2, isbnType: Historical
• authors:
  • Author Name: W. Zhang
    Affiliation: Department of EEE, Hong Kong University of Science and Technology, Hong Kong, China
    Author URL: https://ieeexplore.ieee.org/author/37089092890
    ID: 37089092890
    Order: 1
    Author Affiliations:
    • Department of EEE, Hong Kong University of Science and Technology, Hong Kong, China
  • Author Name: M. Chan
    Affiliation: Department of EEE, Hong Kong University of Science and Technology, Hong Kong, China
    Author URL: https://ieeexplore.ieee.org/author/37275216900
    ID: 37275216900
    Order: 2
    Author Affiliations:
    • Department of EEE, Hong Kong University of Science and Technology, Hong Kong, China
  • Author Name: R. Huang
    Affiliation: Department of EEE, Hong Kong University of Science and Technology, Hong Kong, China
    Author URL: https://ieeexplore.ieee.org/author/37089113038
    ID: 37089113038
    Order: 3
    Author Affiliations:
    • Department of EEE, Hong Kong University of Science and Technology, Hong Kong, China
  • Author Name: P.K. Ko
    Affiliation: Institute of Microelectronics, Peking University, China
    Author URL: https://ieeexplore.ieee.org/author/37276180500
    ID: 37276180500
    Order: 4
    Author Affiliations:
    • Institute of Microelectronics, Peking University, China

Image Sensor

• sensor_type: CMOS
• resolution: Not specified
• dynamic_range: Not specified
• pixel_size: Not specified
• dark_current: < 6nA

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

Applications & Benefits

• cell_imaging: Suitable for applications like cell imaging due to high responsivity and low dark current.
• benefits: Advantages in digital imaging for smartphones, medical devices, and automotive systems.

Supporting Organizations

• supported_by: Not specified

Manuscript Details

• publication_date: 5-8 Oct. 1998

Relevancy Score

• score: 8
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise
  • supported_by
  • authors

Processed JSON Filename

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