Gateallarround Singlecrystalline Silicon Nanowire Optical Sensor

• doi: 10.1109/TRANSDUCERS.2011.5969830
• title: Gate-all-arround single-crystalline silicon nanowire optical sensor
• publisher: IEEE
• isbn: 978-1-4577-0155-9
• issn: 2159-547X
• partnum: 11TH9206
• rank: 2539
• access_type: LOCKED
• content_type: Conferences
• abstract: In this paper, we demonstrate gate-all-around (GAA) single crystalline nanowires (SiNWs) that are fabricated using top-down standard CMOS front-end processes. The GAA silicon nanowires are fabricated in well-defined locations with high-quality electrical contacts, and controlled geometry and alignment. Individual SiNWs are good candidates for high resolution optical sensing and allow for tuning of optical absorption by precise control of the nanowire geometry and orientation. The p-i-n silicon nanowires are highly sensitive to the intensity and polarization of the incident light. These top-down fabricated SiNWs can be easily integrated in high density arrays for enhanced light absorption, resulting in imaging sensors with nanoscale spatial resolution.
• article_number: 5969830
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5969830
• html_url: https://ieeexplore.ieee.org/document/5969830/
• abstract_url: https://ieeexplore.ieee.org/document/5969830/
• publication_title: 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference
• conference_location: Beijing, China
• conference_dates: 5-9 June 2011
• publication_number: 5958191
• is_number: 5969118
• publication_year: 2011
• publication_date: 5-9 June 2011
• start_page: 1757
• end_page: 1760
• citing_paper_count: 2
• citing_patent_count: 0
• download_count: 240
• insert_date: 20110801
• index_terms:
  • ieee_terms:
    • Silicon
    • Nanobioscience
    • Optical sensors
    • Logic gates
    • Optical polarization
    • Photodetectors
    • Photoconductivity
  • author_terms:
    • Silicon nanowire
    • gate-all-around nanowire FET
    • photodetector
    • p-i-n photodiode
    • optical sensor
  • dynamic_index_terms:
    • Optical Sensors
    • Silicon Nanowires
    • Si Nanowires
    • Polarized Light
    • Image Sensor
    • Camera Sensor
    • Top-down Processes
    • Electrical Contact
    • Single Nanowire
    • Enhanced Light Absorption
    • Control Of Geometry
    • Optical Properties
    • Optical System
    • Optical Devices
    • Field-effect Transistors
    • Electron Hole Pairs
    • Focused Ion Beam
    • Polar Angle
    • Brewster Angle
    • Depletion Region
    • Space Charge Region
    • Depletion Layer
    • Depletion Zone
    • Reactive Ion Etching
    • Dark Current
    • P-n Junction
    • Carrier Lifetime
    • Etching Step
    • Optical Polarization
    • Silicon-on-insulator
    • Buried Oxide
    • Nanowire Length
    • Semiconductor Nanowires
    • Resonance Enhancement
• isbn_formats:
  • format: CD, value: 978-1-4577-0155-9, isbnType: New-2005
  • format: Print ISBN, value: 978-1-4577-0157-3, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-4577-0156-6, isbnType: New-2005
• authors:
  • Author Name: M. Ziaei-Moayyed
    Affiliation: Department of Advanced MEMS, Sandia National Laboratories, Albuquerque, NM, USA
    Author URL: https://ieeexplore.ieee.org/author/38311846600
    ID: 38311846600
    Order: 1
    Author Affiliations:
    • Department of Advanced MEMS, Sandia National Laboratories, Albuquerque, NM, USA
  • Author Name: B. Draper
    Affiliation: Department of Advanced MEMS, Sandia National Laboratories, Albuquerque, NM, USA
    Author URL: https://ieeexplore.ieee.org/author/37282981900
    ID: 37282981900
    Order: 2
    Author Affiliations:
    • Department of Advanced MEMS, Sandia National Laboratories, Albuquerque, NM, USA
  • Author Name: M. Okandan
    Affiliation: Department of Advanced MEMS, Sandia National Laboratories, Albuquerque, NM, USA
    Author URL: https://ieeexplore.ieee.org/author/37281554500
    ID: 37281554500
    Order: 3
    Author Affiliations:
    • Department of Advanced MEMS, Sandia National Laboratories, Albuquerque, NM, USA

Image Sensor

• sensor_type: CMOS
• resolution: Not specified
• dynamic_range: Not specified
• pixel_size: 75nm
• dark_current: <1pA to 1.2nA as intensity increases 0.15µW to 2.27µW so not absolute value available for dark current specifically mentioned but performance shown with this range of illumination levels observed from the experimental results described in the discussion section of the paper. It shows photocurrent indicating features of the sensor under varying light conditions, which can affect dynamics of dark current too therefore likely in lower limits than indicated in experiment. This must be considered while generalizing system dynamic performance related metrics as results show direct observable effects on sensor responsivity from both continuous and pulsed light cases described and detailed throughout results section between figures 6 and 8. Doing so shows how otherwise varying parameters also impacted dark current during sensor characterizations or overall tests.

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

Applications & Benefits

• cell_imaging: Highly sensitive intensity and polarization optical sensors for imaging applications
• benefits: Ability to achieve high spatial resolution in imaging applications with enhanced light absorption and potentially capable of single photon detection.

Supporting Organizations

• supported_by: Sandia National Laboratories, United States Department of Energy’s Nuclear National Security Administration

Manuscript Details

• publication_date: 5-9 June 2011

Relevancy Score

• score: 9
• missing_fields:
  • resolution
  • dynamic_range
  • fill_factor
  • quantum_efficiency
  • pixel_size (detailed)
  • dark_current (specific)
  • signal-to-noise ratio
  • power consumption
  • frame_rate
  • sensitivity
  • shutter_speed
  • noise

Processed JSON Filename

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