Formation Of Polymer Insulation Layer Liner On Through Silicon Vias Tsv With High Aspect Ratio Over 51 By Direct Spin Coating

• doi: 10.1109/ECTC.2016.30
• title: Formation of Polymer Insulation Layer (Liner) on Through Silicon Vias (TSV) with High Aspect Ratio over 5:1 by Direct Spin Coating
• publisher: IEEE
• isbn: 978-1-5090-1205-3
• issn:
• rank: 2519
• access_type: LOCKED
• content_type: Conferences
• abstract: Through silicon vias (TSV) are the enabling components in the emerging 2.5D and 3D integration microelectronic packaging. The insulation layer, i.e. the liner, plays the key role in determining the performance of TSV. Polymer liner are receiving a growing attention for its more suitable properties and simpler processing compared to the tradition silicon dioxide (SiO2) liner. Recently we reported a novel low-k polymer that can be conformally coated on the surface of the holes as the TSV liner by spin coating. Theaspect ratio (depth over diameter) of TSV used in previous studied was 2:1. However, in many applications such as CMOS image sensor, Si interposer and 3D integrated circuits, TSV with higher aspect ratio have been broadly adopted. In this paper, we report the successful conformal coating of polymer liner in TSV with aspect ratio over 5:1 by spin coating. In atypical experiment, the polymer were coated on array of TSVs with diameter of 30 μm, depth of 160 μm and spacing of 80 μm. The thickness of polymer after hard baking were measured as8.0 μm on the top surface of Si, 3.5 μm at the corner of the TSV opening, 3.0 μm on the sidewall of TSV, and 9.0 μm at the bottom of the TSV. The top surface roughness of the polymer on the sidewall was measured to be below 5 nm by atomic force microscope, while the sidewall roughness was well below 50 nm under observation of high resolution SEM. The ultra-low surface roughness could facilitate the facile complete metal filling inside TSV. In the paper, we also demonstrate the conformal coating of the polymer in high-aspect-ratio TSV with various diameter from 30 μm to 100 μm. The challenges in the conformal coating as the aspect ratio of TSV increases are discussed. The dielectric constant of the polymer was measured to be 3.2 in frequency range of 10 to 100 kHz, with dissipation factor of 0.02. Thermogravimetric analysis showeda half decomposition temperature of 600 °C in the air. Differential scanning calorimetry showed a glass transitiontemperature of 230 °C. The reported results demonstrate thesuperior properties of the polymer as TSV liner in a broadrange of application. More importantly, the simple processapproach of the polymer using only spin coating make it apromising approach in TSV manufacturing with highthroughput and economic viability.
• article_number: 7545653
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7545653
• html_url: https://ieeexplore.ieee.org/document/7545653/
• abstract_url: https://ieeexplore.ieee.org/document/7545653/
• publication_title: 2016 IEEE 66th Electronic Components and Technology Conference (ECTC)
• conference_location: Las Vegas, NV, USA
• conference_dates: 31 May-3 June 2016
• publication_number: 7542794
• is_number: 7545393
• publication_year: 2016
• publication_date: 31 May-3 June 2016
• start_page: 1713
• end_page: 1719
• citing_paper_count: 7
• citing_patent_count: 0
• download_count: 757
• insert_date: 20160818
• index_terms:
  • ieee_terms:
    • Polymers
    • Through-silicon vias
    • Silicon
    • Substrates
    • Coatings
    • Etching
  • author_terms:
    • through silicon vias
    • polymer liner
    • spin coating
  • dynamic_index_terms:
    • Aspect Ratio
    • Spin-coated
    • Dielectric Layer
    • Insulation Layer
    • Through Silicon Via
    • Silicon Vias
    • Vitality
    • Vitrified
    • Glass Transition
    • Thermogravimetric Analysis
    • Thermal Gravimetric Analysis
    • Thermogravimetry
    • Atomic Force Microscopy
    • Thermal Decomposition
    • Decomposition Temperature
    • Thermal Degradation
    • Dielectric Constant
    • Relative Permittivity
    • Differential Scanning Calorimetry
    • Differential Scanning Calorimeter
    • Glass Transition Temperature
    • Broad Range Of Applications
    • Broader Range Of Applications
    • Si Surface
    • Polymer Thickness
    • Hole Surface
    • 3D Integration
    • Chemical Vapor Deposition
    • Vapor Deposition
    • Chemical Deposition
    • Thermal Expansion
    • Coefficient Of Thermal Expansion
    • TA Instruments
    • Si Substrate
    • Plasma-enhanced Chemical Vapor Deposition
    • PECVD
    • Thick Line
    • Piranha Solution
    • Au Thin Film
    • Deep Hole
    • Lining Material
    • Low Surface Roughness
    • Weight Retention
    • Electrical Performance
• isbn_formats:
  • format: Print on Demand(PoD) ISBN, value: 978-1-5090-1205-3, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-5090-1204-6, isbnType: New-2005
• authors:
  • Author Name: Liyi Li
    Affiliation: School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, USA
    Author URL: https://ieeexplore.ieee.org/author/37073156900
    ID: 37073156900
    Order: 1
    Author Affiliations:
    • School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, USA
  • Author Name: Guoping Zhang
    Affiliation: School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, USA
    Author URL: https://ieeexplore.ieee.org/author/38562636800
    ID: 38562636800
    Order: 2
    Author Affiliations:
    • School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, USA
  • Author Name: Chia-Chi Tuan
    Affiliation: School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, USA
    Author URL: https://ieeexplore.ieee.org/author/37085387695
    ID: 37085387695
    Order: 3
    Author Affiliations:
    • School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, USA
  • Author Name: Kyoung-Sik Moon
    Affiliation: Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, China
    Author URL: https://ieeexplore.ieee.org/author/37272778500
    ID: 37272778500
    Order: 4
    Author Affiliations:
    • Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, China
  • Author Name: Rong Sun
    Affiliation: Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, China
    Author URL: https://ieeexplore.ieee.org/author/37395446800
    ID: 37395446800
    Order: 5
    Author Affiliations:
    • Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, China

Image Sensor

• sensor_type: CMOS
• resolution: Not specified
• dynamic_range: Not specified
• pixel_size: Not specified
• dark_current: Not specified

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

Applications & Benefits

• cell_imaging: CMOS image sensors are used in various applications including smartphones, medical devices, and automotive systems.
• benefits: Enable digital imaging, allowing for high quality image capture in diverse fields.

Supporting Organizations

• supported_by: National Science Foundation (CMMI 1130876)

Manuscript Details

• publication_date: 31 May-3 June 2016

Relevancy Score

• score: 8
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise

Processed JSON Filename

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