Feedforward Effect In Standard Cmos Pinned Photodiodes

• doi: 10.1109/TED.2013.2238675
• title: Feedforward Effect in Standard CMOS Pinned Photodiodes
• publisher: IEEE
• isbn:
• issn: 1557-9646
• rank: 2492
• access_type: LOCKED
• content_type: Journals
• abstract: The charge handling capacity or the full well of the photodiodes used in CMOS image sensors is a very important characteristic because it affects the saturation level and the dynamic range of the image sensor. The scaling of the pixel size to increase the spatial resolution is also reducing the barrier separating the photon detection and the collection node in a standard pinned photodiode (PPD). The barrier reduction and the thermionic emission of the electrons allow some of the charges from the photodiode well to feed into the collection node, resulting in a feedforward voltage. In conventional readout of the pixels, this feedforward voltage is neglected and lost when the collection node is reset. The barrier height of the transfer gate (TG) determines the quantity of electrons held back in the photodiode well. Thus, the knowledge of this barrier height is very important in determining the true charge handling capacity of the photodiode potential well. Experiments with standard PPDs showed that a barrier height of around 0.5 V is needed to hold the electrons in the photodiode potential well. This is analogous to the barrier potential for charge-coupled devices reported in the literature. Furthermore, the barrier height dependence on the charge storing time in the photodiode well and the structural dimensions of the TG and photodiode length are also explored in this paper.
• article_number: 6420923
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6420923
• html_url: https://ieeexplore.ieee.org/document/6420923/
• abstract_url: https://ieeexplore.ieee.org/document/6420923/
• publication_title: IEEE Transactions on Electron Devices
• conference_location:
• conference_dates:
• publication_number: 16
• is_number: 6466448
• publication_year: 2013
• publication_date: March 2013
• start_page: 1154
• end_page: 1161
• citing_paper_count: 23
• citing_patent_count: 0
• download_count: 1225
• insert_date: 20130125
• index_terms:
  • ieee_terms:
    • Photodiodes
    • Feedforward neural networks
    • Electric potential
    • CMOS integrated circuits
    • Thermionic emission
    • Dynamic range
    • Standards
  • author_terms:
    • Barrier height
    • charge transfer
    • CMOS image sensor
    • feedforward voltage
    • pinned photodiode (PPD)
  • dynamic_index_terms:
    • PIN Photodiode
    • CCD Camera
    • Charge-coupled Device
    • Dynamic Range
    • Image Sensor
    • Camera Sensor
    • Barrier Height
    • Potential Well
    • Thermionic Emission
    • Richardson Constant
    • Signal-to-noise
    • Signal-to-noise Ratio
    • Increase In Length
    • Boltzmann Constant
    • Absolute Temperature
    • Temperature In Kelvin
    • Thermodynamic Temperature
    • Voltage Levels
    • Open Phase
    • Reset Voltage
    • Minimum Barrier
    • Low Voltage Level
• authors:
  • Author Name: Mukul Sarkar
    Affiliation: Electrical Engineering Department, Indian Institute of Technology Delhi, New Delhi, India
    Author URL: https://ieeexplore.ieee.org/author/37394227700
    ID: 37394227700
    Order: 1
    Author Affiliations:
    • Electrical Engineering Department, Indian Institute of Technology Delhi, New Delhi, India
    • Electronic Instrumentation Laboratory, Delft University of Technology, Delft, Netherlands
  • Author Name: Bernhard Buttgen
    Affiliation: MESA Imaging AG, Zurich, Switzerland
    Author URL: https://ieeexplore.ieee.org/author/37595685500
    ID: 37595685500
    Order: 2
    Author Affiliations:
    • MESA Imaging AG, Zurich, Switzerland
  • Author Name: Albert J. P. Theuwissen
    Affiliation: Harvest Imaging, Bree, Belgium
    Author URL: https://ieeexplore.ieee.org/author/37282956500
    ID: 37282956500
    Order: 3
    Author Affiliations:
    • Harvest Imaging, Bree, Belgium
    • Electronic Instrumentation Laboratory, Delft University of Technology, Delft, Netherlands

Image Sensor

• sensor_type: CMOS
• resolution: Not specified in paper
• dynamic_range: Not specified in paper
• pixel_size: Not specified in paper
• dark_current: Not specified in paper

Optical Data

• focal_length: Not specified in paper
• aperture: Not specified in paper
• field_of_view: Not specified in paper
• distortion: Not specified in paper

Performance Metrics

• frame_rate: Not specified in paper
• signal_to_noise_ratio: Not specified in paper
• sensitivity: Not specified in paper
• shutter_speed: Not specified in paper
• power_consumption: Not specified in paper
• noise: Not specified in paper

Applications & Benefits

• cell_imaging: Not specified in paper
• benefits: Not specified in paper

Supporting Organizations

• supported_by: MESA Imaging

Manuscript Details

• publication_date: March 2013

Relevancy Score

• score: 10
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise
  • cell_imaging
  • benefits

Processed JSON Filename

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