Fabrication Of Stacked Cmos Image Sensor With Nioga2o3 Uv Photoconversion Films Using Lowoxygen Rfsputtered Nio For Transparent Image Sensor

• doi: 10.1109/LSENS.2023.3275189
• title: Fabrication of Stacked CMOS Image Sensor With NiO/Ga2O3 UV Photoconversion Films Using Low-Oxygen RF-Sputtered NiO for Transparent Image Sensor
• publisher: IEEE
• isbn:
• issn: 2475-1472
• rank: 2475
• access_type: LOCKED
• content_type: Journals
• abstract: This letter demonstrated a stacked complementary metal-oxide-semiconductor (CMOS) image sensor utilizing nickel oxide (NiO)/gallium oxide (Ga2O3) photoconversion films. The combination of the ultrawide bandgap p-type NiO and n-type Ga2O3 enables a photodiode sensitive to UV but not to visible light, thereby realizing a transparent image sensor in combination with transparent circuits in the future. To fabricate a highly efficient image sensor, one of the most crucial challenges is to reduce the dark current in the photodiodes, which deteriorates the image quality. NiO and Ga2O3 are materials with immense potential to significantly suppress the dark current owing to their heteroepitaxial growth and the ability to control the carrier concentration through impurity doping while suppressing defects. This letter fabricated a CMOS image sensor overlaid with NiO/Ga2O3 photoconversion films to reduce the dark current to 2 nA/cm2 with an applied voltage of 20 V by optimizing the deposition conditions during sputtering and successfully confirmed the photo response under UV irradiation.
• article_number: 10123129
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10123129
• html_url: https://ieeexplore.ieee.org/document/10123129/
• abstract_url: https://ieeexplore.ieee.org/document/10123129/
• publication_title: IEEE Sensors Letters
• conference_location:
• conference_dates:
• publication_number: 7782634
• is_number: 10129999
• publication_year: 2023
• publication_date: June 2023
• start_page: 1
• end_page: 4
• citing_paper_count: 0
• citing_patent_count: 0
• download_count: 415
• insert_date: 20230511
• index_terms:
  • ieee_terms:
    • Dark current
    • Photodiodes
    • Sensors
    • Films
    • Nickel
    • Radiation effects
    • Indium tin oxide
  • author_terms:
    • Electromagnetic wave sensors
    • transparent image sensors
    • gallium oxide
    • nickel oxide
    • photoconversion films
    • photodiodes
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Nickel Oxide
    • Transparent Sensor
    • Band Gap
    • Ultraviolet Irradiation
    • Ultraviolet Rays
    • UV Light Irradiation
    • Carrier Concentration
    • Charge Carrier Density
    • Dark Current
    • Impurity Doping
    • X-ray Photoelectron Spectroscopy
    • X-ray Photoelectron
    • Internet Of Things
    • Glass Substrate
    • Photocurrent
    • I-V Curves
    • Current Voltage Characteristics
    • I-V Characteristics
    • O2 Concentration
    • Indium Tin Oxide
    • Internet Of Things Devices
    • IoT Devices
    • Mercury Lamp
    • Mercury Arc Lamp
    • Mercury Vapor
    • Hg Lamp
    • Depletion Region
    • Space Charge Region
    • Depletion Layer
    • Depletion Zone
    • Distance Sensor
    • High-pressure Mercury Lamp
    • Industrial Camera
• authors:
  • Author Name: Keitada Mineo
    Affiliation: NHK Science & Technology Research Laboratories, Japan Broadcasting Corporation, Tokyo, Japan
    Author URL: https://ieeexplore.ieee.org/author/37086289419
    ID: 37086289419
    Order: 1
    Author Affiliations:
    • NHK Science & Technology Research Laboratories, Japan Broadcasting Corporation, Tokyo, Japan
  • Author Name: Shigeyuki Imura
    Affiliation: NHK Science & Technology Research Laboratories, Japan Broadcasting Corporation, Tokyo, Japan
    Author URL: https://ieeexplore.ieee.org/author/37085575377
    ID: 37085575377
    Order: 2
    Author Affiliations:
    • NHK Science & Technology Research Laboratories, Japan Broadcasting Corporation, Tokyo, Japan
  • Author Name: Yuji Miyamoto
    Affiliation: NHK Science & Technology Research Laboratories, Japan Broadcasting Corporation, Tokyo, Japan
    Author URL: https://ieeexplore.ieee.org/author/37088370901
    ID: 37088370901
    Order: 3
    Author Affiliations:
    • NHK Science & Technology Research Laboratories, Japan Broadcasting Corporation, Tokyo, Japan
  • Author Name: Masahide Goto
    Affiliation: NHK Science & Technology Research Laboratories, Japan Broadcasting Corporation, Tokyo, Japan
    Author URL: https://ieeexplore.ieee.org/author/37330360100
    ID: 37330360100
    Order: 4
    Author Affiliations:
    • NHK Science & Technology Research Laboratories, Japan Broadcasting Corporation, Tokyo, Japan

Image Sensor

• sensor_type: CMOS
• resolution: 96x96 pixels
• dynamic_range: Not specified
• pixel_size: 61 µm
• dark_current: 2 nA/cm² at 20 V

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• frame_rate: 30 fps

Applications & Benefits

• cell_imaging: Can capture UV-responsive images for various applications.
• benefits: Enables the development of transparent image sensors for professional, consumer, industrial cameras, and IoT devices.

Supporting Organizations

• supported_by: NHK Science & Technology Research Laboratories, Japan Broadcasting Corporation

Manuscript Details

• publication_date: June 2023

Relevancy Score

• score: 9
• missing_fields:
  • fill factor
  • quantum efficiency
  • readout speed
  • temporal noise
  • fixed-pattern noise
  • analog-to-digital conversion techniques
  • microlenses
  • on-chip colour filters
  • global or rolling shutters
  • backside illumination

Processed JSON Filename

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