Fabrication Of 3D Packaging Tsv Using Drie
- doi: 10.1109/DTIP.2008.4752963
-
title: Fabrication of 3D packaging TSV using DRIE
- publisher: IEEE
- isbn: 978-2-35500-006-5
- issn:
- partnum: 08EX2209
- rank: 2472
- access_type: LOCKED
- content_type: Conferences
-
abstract: 3D stacking of die with TSV (through Silicon
Via) connection as well as wafer level packaging of CMOS image sensors
(CIS) are becoming very hot topics. While TSV of CIS is definitively a
back-end technique, 3D stacking of die through TSV can be done with
different strategies: from the via first approach, a front-end process,
to the via last approach, a back-end process. Each of these different
ways of elaborating the vias has its advantages and drawbacks in terms
of electrical performances, refilling materials and cost. They have in
common the need to etch the vias. In this paper, we will review the DRIE
performances for the definition of the different via shapes, depths, and
sizes. A very low temperature (< 150 degC) PECVD process has also been
characterized and will be presented for the high demanding packaging of
CIS.
- article_number: 4752963
-
pdf_url:
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=4752963
-
html_url:
https://ieeexplore.ieee.org/document/4752963/
-
abstract_url:
https://ieeexplore.ieee.org/document/4752963/
-
publication_title: 2008 Symposium on Design, Test,
Integration and Packaging of MEMS/MOEMS
- conference_location: Nice, France
- conference_dates: 9-11 April 2008
- publication_number: 4731228
- is_number: 4752931
- publication_year: 2008
- publication_date: 9-11 April 2008
- start_page: 109
- end_page: 114
- citing_paper_count: 42
- citing_patent_count: 1
- download_count: 2035
- insert_date: 20090119
-
index_terms:
-
ieee_terms:
- Fabrication
- Packaging
- Through-silicon vias
- Computational Intelligence Society
- Wafer scale integration
- Stacking
- Silicon
- CMOS image sensors
- Costs
- Etching
-
author_terms:
- TSV
- Via first
- Via last
- Packaging
- DRIE
- Silicon etching
- Bosch process
- Tapered profile
- Oxide etching
- PECVD
-
dynamic_index_terms:
- Through Silicon Via
- Back-end Processing
- Aspect Ratio
- Fabrication Process
- Oxide Layer
- Layer Deposition
- High Aspect Ratio
- Microfabrication
- Micromachining
- Dielectric Layer
- Insulation Layer
- Uniform Temperature
- Silicon-on-insulator
- Buried Oxide
- Halogen Groups
- Halide Groups
- Fluorine Groups
- Machine System
- Etching Rate
- High-density Plasma
-
isbn_formats:
-
format: Print ISBN,
value: 978-2-35500-006-5,
isbnType: New-2005
-
authors:
-
Author Name: M. Puech
Affiliation: Alcatel Micro Machining Systems,
Annecy-le-Vieux, France
Author URL:
https://ieeexplore.ieee.org/author/37419016700
ID: 37419016700
Order: 1
Author Affiliations:
- Alcatel Micro Machining Systems, Annecy-le-Vieux, France
-
Author Name: J.M. Thevenoud
Affiliation: Alcatel Micro Machining Systems,
Annecy-le-Vieux, France
Author URL:
https://ieeexplore.ieee.org/author/37662341700
ID: 37662341700
Order: 2
Author Affiliations:
- Alcatel Micro Machining Systems, Annecy-le-Vieux, France
-
Author Name: J.M. Gruffat
Affiliation: Alcatel Micro Machining Systems,
Annecy-le-Vieux, France
Author URL:
https://ieeexplore.ieee.org/author/37662342300
ID: 37662342300
Order: 3
Author Affiliations:
- Alcatel Micro Machining Systems, Annecy-le-Vieux, France
-
Author Name: N. Launay
Affiliation: Alcatel Micro Machining Systems,
Annecy-le-Vieux, France
Author URL:
https://ieeexplore.ieee.org/author/37662341900
ID: 37662341900
Order: 4
Author Affiliations:
- Alcatel Micro Machining Systems, Annecy-le-Vieux, France
-
Author Name: N. Arnal
Affiliation: Alcatel Micro Machining Systems,
Annecy-le-Vieux, France
Author URL:
https://ieeexplore.ieee.org/author/37085446873
ID: 37085446873
Order: 5
Author Affiliations:
- Alcatel Micro Machining Systems, Annecy-le-Vieux, France
-
Author Name: P. Godinat
Affiliation: Alcatel Micro Machining Systems,
Annecy-le-Vieux, France
Author URL:
https://ieeexplore.ieee.org/author/37662344800
ID: 37662344800
Order: 6
Author Affiliations:
- Alcatel Micro Machining Systems, Annecy-le-Vieux, France
Image Sensor
- sensor_type: CMOS
- resolution: not specified
- dynamic_range: not specified
- pixel_size: not specified
- dark_current: not specified
Optical Data
- focal_length: not specified
- aperture: not specified
- field_of_view: not specified
- distortion: not specified
Performance Metrics
Applications & Benefits
-
cell_imaging: used in CMOS image sensors (CIS) for
high-performance applications
-
benefits: high demand for smaller size packages and
higher memory density in devices like smartphones and medical systems
Supporting Organizations
-
supported_by: Alcatel MicroMachining Systems, EMC3D
consortium, STMicroelectronics
Manuscript Details
- publication_date: 9-11 April 2008
Relevancy Score
- score: 8
-
missing_fields:
- resolution
- dynamic_range
- pixel_size
- dark_current
- focal_length
- aperture
- field_of_view
- distortion
- frame_rate
- signal_to_noise_ratio
- sensitivity
- shutter_speed
- power_consumption
- noise
Processed JSON Filename
request_b722e926-26af-4887-a52d-35ad0b8decb5-fabrication_of_3d_packaging_tsv_using_drie.json