Fabricating Photosensitive Polymer Insulation Layer By Spincoating For Through Silicon Vias

• doi: 10.1109/ICEPT.2016.7583171
• title: Fabricating photosensitive polymer insulation layer by spin-coating for through silicon vias
• publisher: IEEE
• isbn: 978-1-5090-1397-5
• issn:
• rank: 2469
• access_type: LOCKED
• content_type: Conferences
• abstract: Through silicon via (TSV) is an enabling technology for 3D interconnection. The insulation layer at the bottom of the via usually needs to be removed in order to expose the pad so that the electrical interconnection from the front side to the back side can be realized. This removal may be implemented by plasma etching, laser drilling, or photolithography. Compared with the other two methods, photolithography is considered having the merits of high efficiency, high reliability and low cost. In this study, we developed a photosensitive polymer insulation material that can be deposited with the spin-coating process. The photosensitive material at the bottom of the TSV was developed with potassium hydroxide (KOH) solution after exposure to thr 365 nm UV light. At last, the residual photosensitive polymer was cured via a preset heating procedure. The resulting polymer insulation layer exhibited excellent thermal stability, good chemical resistance, good adhesion and good thickness uniformity. Such a material may be considered a promising candidate for the insulation layer for the applications of CMOS image sensor (CIS) and fingerprint identification sensor with TSVs having a low aspect ratio.
• article_number: 7583171
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7583171
• html_url: https://ieeexplore.ieee.org/document/7583171/
• abstract_url: https://ieeexplore.ieee.org/document/7583171/
• publication_title: 2016 17th International Conference on Electronic Packaging Technology (ICEPT)
• conference_location: Wuhan, China
• conference_dates: 16-19 Aug. 2016
• publication_number: 7574980
• is_number: 7583073
• publication_year: 2016
• publication_date: 16-19 Aug. 2016
• start_page: 439
• end_page: 442
• citing_paper_count: 0
• citing_patent_count: 0
• download_count: 276
• insert_date: 20161006
• index_terms:
  • ieee_terms:
    • Insulation
    • Polymers
    • Curing
    • Through-silicon vias
    • Thermal stability
    • Films
    • Lithography
  • author_terms:
    • through silicon via
    • insulation layer
    • electrical interconnection
    • photosensitive polymer
    • spin-coating
  • dynamic_index_terms:
    • Dielectric Layer
    • Insulation Layer
    • Polymer Insulation
    • Polymer Dielectrics
    • Through Silicon Via
    • Photosensitive Polymer
    • Photosensitive Layer
    • Silicon Vias
    • Thermal Stability
    • Potassium Hydroxide
    • Photolithography
    • Optical Lithography
    • Plasma Etching
    • Low Aspect Ratio
    • Photosensitive Materials
    • Electrical Interconnection
    • Scanning Electron Microscopy
    • Film Thickness
    • Thermogravimetric Analysis
    • Thermal Gravimetric Analysis
    • Thermogravimetry
    • Differential Scanning Calorimetry
    • Differential Scanning Calorimeter
    • Chemical Vapor Deposition
    • Vapor Deposition
    • Chemical Deposition
    • Thermal Expansion
    • Coefficient Of Thermal Expansion
    • Sidewall
    • Side Walls
    • Spinning Speed
    • Propylene Glycol Monomethyl Ether
    • Curing Temperature
    • Solidus Temperature
    • Solid Temperature
    • Set Temperature
    • Photoresist
    • Liquid Polymer
    • Polymeric Liquids
    • Physical Vapor Deposition
    • SiO2 Nanoparticles
    • Basic Solution
    • Adhesion Strength
    • Shear Rate
• isbn_formats:
  • format: Print on Demand(PoD) ISBN, value: 978-1-5090-1397-5, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-5090-1396-8, isbnType: New-2005
• authors:
  • Author Name: Qiang Liu
    Affiliation: Chinese Academy of Sciences, Shenzhen Institutes of Advanced Technology, Shenzhen, China
    Author URL: https://ieeexplore.ieee.org/author/37085420891
    ID: 37085420891
    Order: 1
    Author Affiliations:
    • Chinese Academy of Sciences, Shenzhen Institutes of Advanced Technology, Shenzhen, China
  • Author Name: Guoping Zhang
    Affiliation: Chinese Academy of Sciences, Shenzhen Institutes of Advanced Technology, Shenzhen, China
    Author URL: https://ieeexplore.ieee.org/author/38562636800
    ID: 38562636800
    Order: 2
    Author Affiliations:
    • Chinese Academy of Sciences, Shenzhen Institutes of Advanced Technology, Shenzhen, China
  • Author Name: Rong Sun
    Affiliation: Chinese Academy of Sciences, Shenzhen Institutes of Advanced Technology, Shenzhen, China
    Author URL: https://ieeexplore.ieee.org/author/37395446800
    ID: 37395446800
    Order: 3
    Author Affiliations:
    • Chinese Academy of Sciences, Shenzhen Institutes of Advanced Technology, Shenzhen, China
  • Author Name: S. W. Ricky Lee
    Affiliation: Department of Mechanical and Aerospace Engineering, Hong Kong University of Science and Technology Hong Kong, China
    Author URL: https://ieeexplore.ieee.org/author/37281135500
    ID: 37281135500
    Order: 4
    Author Affiliations:
    • Department of Mechanical and Aerospace Engineering, Hong Kong University of Science and Technology Hong Kong, China
  • Author Name: C. P. Wong
    Affiliation: Department of Electronic Engineering Faculty of Engineering, The Chinese University of Hong Kong, Hong Kong, China
    Author URL: https://ieeexplore.ieee.org/author/37280661900
    ID: 37280661900
    Order: 5
    Author Affiliations:
    • Department of Electronic Engineering Faculty of Engineering, The Chinese University of Hong Kong, Hong Kong, China
    • School of Materials Science and Engineering, Georgia Institube of Technology Atlanta, Georgia, USA

Image Sensor

• sensor_type: CMOS
• resolution: Not specified
• dynamic_range: Not specified
• pixel_size: Not specified
• dark_current: Not specified

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

Applications & Benefits

• cell_imaging: Used in CMOS image sensors for applications such as smartphones and fingerprint identification sensors
• benefits: Enhances sensitivity and resolution with design considerations like microlenses and backside illumination.

Supporting Organizations

• supported_by: National Natural Science Foundation of China, Guangdong and Shenzhen Innovative Research Team Program, Key Laboratory of Guangdong Province, R&D Funds for basic Research Program of Shenzhen.

Manuscript Details

• publication_date: 16-19 Aug. 2016

Relevancy Score

• score: 8
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise

Processed JSON Filename

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