Extremelylownoise Cmos Image Sensor With High Saturation Capacity

• doi: 10.1109/IEDM.2011.6131511
• title: Extremely-low-noise CMOS Image Sensor with high saturation capacity
• publisher: IEEE
• isbn: 978-1-4577-0504-5
• issn: 0163-1918
• partnum: 11CH38869
• rank: 2448
• access_type: LOCKED
• content_type: Conferences
• abstract: We have developed a flat device structure, which we call “FLAT”, with no isolation grooves/ridges and no Si substrate etching in the imaging area of the CMOS Image Sensor (CIS). We employed this FLAT structure to achieve a 1.12 μm pitch pixel CIS with a 1.25 transistor/pixel architecture and excellent image quality. It uses FLAT transistors(Trs) that generate greatly-reduced 1/f noise, and FLAT isolators (Isos) that increase the saturation capacity (Qs) due to increasing both effective photodiode (PD) area and PD potential under low dark current.
• article_number: 6131511
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6131511
• html_url: https://ieeexplore.ieee.org/document/6131511/
• abstract_url: https://ieeexplore.ieee.org/document/6131511/
• publication_title: 2011 International Electron Devices Meeting
• conference_location: Washington, DC, USA
• conference_dates: 5-7 Dec. 2011
• publication_number: 6123666
• is_number: 6131464
• publication_year: 2011
• publication_date: 5-7 Dec. 2011
• start_page: 8.1.1
• end_page: 8.1.4
• citing_paper_count: 12
• citing_patent_count: 14
• download_count: 2028
• insert_date: 20120116
• index_terms:
  • ieee_terms:
    • Noise
    • Dark current
    • Silicon
    • Thermal noise
    • Transistors
    • Layout
    • Logic gates
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • Saturated Capacity
    • Device Structure
    • Dark Current
    • Flat Structure
    • Low Dark Current
    • Excellent Image Quality
    • Random Noise
    • Channel Noise
    • Low Noise
    • Thermal Noise
    • Current Noise
    • Pixel Area
    • Current Components
    • Pixels In Region
• isbn_formats:
  • format: Online ISBN, value: 978-1-4577-0504-5, isbnType: New-2005
  • format: Print ISBN, value: 978-1-4577-0506-9, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-4577-0505-2, isbnType: New-2005
• authors:
  • Author Name: K. Itonaga
    Affiliation: Semiconductor Technology Development Division, Core Device Development Group, Research and Development Platform, Sony Corporation, Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37398255400
    ID: 37398255400
    Order: 1
    Author Affiliations:
    • Semiconductor Technology Development Division, Core Device Development Group, Research and Development Platform, Sony Corporation, Kanagawa, Japan
  • Author Name: K. Mizuta
    Affiliation: Semiconductor Technology Development Division, Core Device Development Group, Research and Development Platform, Sony Corporation, Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37392936200
    ID: 37392936200
    Order: 2
    Author Affiliations:
    • Semiconductor Technology Development Division, Core Device Development Group, Research and Development Platform, Sony Corporation, Kanagawa, Japan
  • Author Name: T. Kataoka
    Affiliation: Semiconductor Technology Development Division, Core Device Development Group, Research and Development Platform, Sony Corporation, Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37289048100
    ID: 37289048100
    Order: 3
    Author Affiliations:
    • Semiconductor Technology Development Division, Core Device Development Group, Research and Development Platform, Sony Corporation, Kanagawa, Japan
  • Author Name: M. Yanagita
    Affiliation: Semiconductor Technology Development Division, Core Device Development Group, Research and Development Platform, Sony Corporation, Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37407873600
    ID: 37407873600
    Order: 4
    Author Affiliations:
    • Semiconductor Technology Development Division, Core Device Development Group, Research and Development Platform, Sony Corporation, Kanagawa, Japan
  • Author Name: H. Ikeda
    Affiliation: Semiconductor Technology Development Division, Core Device Development Group, Research and Development Platform, Sony Corporation, Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37406716100
    ID: 37406716100
    Order: 5
    Author Affiliations:
    • Semiconductor Technology Development Division, Core Device Development Group, Research and Development Platform, Sony Corporation, Kanagawa, Japan
  • Author Name: H. Ishiwata
    Affiliation: Semiconductor Technology Development Division, Core Device Development Group, Research and Development Platform, Sony Corporation, Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37088610039
    ID: 37088610039
    Order: 6
    Author Affiliations:
    • Semiconductor Technology Development Division, Core Device Development Group, Research and Development Platform, Sony Corporation, Kanagawa, Japan
  • Author Name: Y. Tanaka
    Affiliation: Semiconductor Technology Development Division, Core Device Development Group, Research and Development Platform, Sony Corporation, Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37065131900
    ID: 37065131900
    Order: 7
    Author Affiliations:
    • Semiconductor Technology Development Division, Core Device Development Group, Research and Development Platform, Sony Corporation, Kanagawa, Japan
  • Author Name: T. Wakano
    Affiliation: Semiconductor Technology Development Division, Core Device Development Group, Research and Development Platform, Sony Corporation, Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/38233488600
    ID: 38233488600
    Order: 8
    Author Affiliations:
    • Semiconductor Technology Development Division, Core Device Development Group, Research and Development Platform, Sony Corporation, Kanagawa, Japan
  • Author Name: Y. Matoba
    Affiliation: Semiconductor Technology Development Division, Core Device Development Group, Research and Development Platform, Sony Corporation, Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/38235618100
    ID: 38235618100
    Order: 9
    Author Affiliations:
    • Semiconductor Technology Development Division, Core Device Development Group, Research and Development Platform, Sony Corporation, Kanagawa, Japan
  • Author Name: T. Oishi
    Affiliation: Semiconductor Technology Development Division, Core Device Development Group, Research and Development Platform, Sony Corporation, Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37970888000
    ID: 37970888000
    Order: 10
    Author Affiliations:
    • Semiconductor Technology Development Division, Core Device Development Group, Research and Development Platform, Sony Corporation, Kanagawa, Japan
  • Author Name: R. Yamamoto
    Affiliation: Semiconductor Technology Development Division, Core Device Development Group, Research and Development Platform, Sony Corporation, Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37301381800
    ID: 37301381800
    Order: 11
    Author Affiliations:
    • Semiconductor Technology Development Division, Core Device Development Group, Research and Development Platform, Sony Corporation, Kanagawa, Japan
  • Author Name: S. Arakawa
    Affiliation: Semiconductor Technology Development Division, Core Device Development Group, Research and Development Platform, Sony Corporation, Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37088722715
    ID: 37088722715
    Order: 12
    Author Affiliations:
    • Semiconductor Technology Development Division, Core Device Development Group, Research and Development Platform, Sony Corporation, Kanagawa, Japan
  • Author Name: J. Komachi
    Affiliation: Semiconductor Technology Development Division, Core Device Development Group, Research and Development Platform, Sony Corporation, Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37088609997
    ID: 37088609997
    Order: 13
    Author Affiliations:
    • Semiconductor Technology Development Division, Core Device Development Group, Research and Development Platform, Sony Corporation, Kanagawa, Japan
  • Author Name: M. Katsumata
    Affiliation: Semiconductor Technology Development Division, Core Device Development Group, Research and Development Platform, Sony Corporation, Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37088610013
    ID: 37088610013
    Order: 14
    Author Affiliations:
    • Semiconductor Technology Development Division, Core Device Development Group, Research and Development Platform, Sony Corporation, Kanagawa, Japan
  • Author Name: S. Watanabe
    Affiliation: Semiconductor Technology Development Division, Core Device Development Group, Research and Development Platform, Sony Corporation, Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37292717500
    ID: 37292717500
    Order: 15
    Author Affiliations:
    • Semiconductor Technology Development Division, Core Device Development Group, Research and Development Platform, Sony Corporation, Kanagawa, Japan
  • Author Name: S. Saito
    Affiliation: Semiconductor Technology Development Division, Core Device Development Group, Research and Development Platform, Sony Corporation, Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/38238076100
    ID: 38238076100
    Order: 16
    Author Affiliations:
    • Semiconductor Technology Development Division, Core Device Development Group, Research and Development Platform, Sony Corporation, Kanagawa, Japan
  • Author Name: T. Haruta
    Affiliation: Semiconductor Technology Development Division, Core Device Development Group, Research and Development Platform, Sony Corporation, Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37392814600
    ID: 37392814600
    Order: 17
    Author Affiliations:
    • Semiconductor Technology Development Division, Core Device Development Group, Research and Development Platform, Sony Corporation, Kanagawa, Japan
  • Author Name: S. Matsumoto
    Affiliation: Semiconductor Technology Development Division, Core Device Development Group, Research and Development Platform, Sony Corporation, Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37275311200
    ID: 37275311200
    Order: 18
    Author Affiliations:
    • Semiconductor Technology Development Division, Core Device Development Group, Research and Development Platform, Sony Corporation, Kanagawa, Japan
  • Author Name: K. Ohno
    Affiliation: Semiconductor Technology Development Division, Core Device Development Group, Research and Development Platform, Sony Corporation, Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37264993900
    ID: 37264993900
    Order: 19
    Author Affiliations:
    • Semiconductor Technology Development Division, Core Device Development Group, Research and Development Platform, Sony Corporation, Kanagawa, Japan
  • Author Name: T. Ezaki
    Affiliation: Semiconductor Technology Development Division, Core Device Development Group, Research and Development Platform, Sony Corporation, Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/38235907400
    ID: 38235907400
    Order: 20
    Author Affiliations:
    • Semiconductor Technology Development Division, Core Device Development Group, Research and Development Platform, Sony Corporation, Kanagawa, Japan
  • Author Name: T. Nagano
    Affiliation: Semiconductor Technology Development Division, Core Device Development Group, Research and Development Platform, Sony Corporation, Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37740249100
    ID: 37740249100
    Order: 21
    Author Affiliations:
    • Semiconductor Technology Development Division, Core Device Development Group, Research and Development Platform, Sony Corporation, Kanagawa, Japan
  • Author Name: T. Hirayama
    Affiliation: Semiconductor Technology Development Division, Core Device Development Group, Research and Development Platform, Sony Corporation, Kanagawa, Japan
    Author URL: https://ieeexplore.ieee.org/author/37397997900
    ID: 37397997900
    Order: 22
    Author Affiliations:
    • Semiconductor Technology Development Division, Core Device Development Group, Research and Development Platform, Sony Corporation, Kanagawa, Japan

Image Sensor

• sensor_type: CMOS
• resolution: 1.12 μm pitch
• dynamic_range: Not specified
• pixel_size: 1.12 μm
• dark_current: Low dark current achieved through FLAT structure

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• noise: Low random noise due to FLAT technology

Applications & Benefits

• cell_imaging: High-quality imaging for mobile devices and other applications
• benefits: Excellent image quality, high saturation capacity, low dark current, and low noise

Supporting Organizations

• supported_by: Sony Corporation

Manuscript Details

• publication_date: 5-7 Dec. 2011

Relevancy Score

• score: 10

Processed JSON Filename

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