Exploration Of The Epitaxial Layer Affecting Behaviors Of Cmos Photodiodes

• doi: 10.1109/ISDRS.2003.1272111
• title: Exploration of the epitaxial layer affecting behaviors of CMOS photodiodes
• publisher: IEEE
• isbn: 0-7803-8139-4
• issn:
• partnum: 03EX741
• rank: 2435
• access_type: LOCKED
• content_type: Conferences
• abstract: In this paper the method to deposit an epitaxial layer on the substrate of silicon-based image sensor to overcome the higher resposivity (A/W) at the infrared region due to energy gap, 1.12eV, of the silicon is explored. The measurement results demonstrate that the CMOS photodiode without epitaxial layer have the maximum responsivity at the infrared region but the photodiode with epitaxial layer reduces the responsivity at the infrared region efficiently. The model of the CMOS photodiode is utilized to analyze the characteristics of the epitaxial layer. The simulation results of the photo-responses of the epitaxial layers are also presented.
• article_number: 1272111
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=1272111
• html_url: https://ieeexplore.ieee.org/document/1272111/
• abstract_url: https://ieeexplore.ieee.org/document/1272111/
• publication_title: International Semiconductor Device Research Symposium, 2003
• conference_location: Washington, DC, USA
• conference_dates: 10-12 Dec. 2003
• publication_number: 8974
• is_number: 28477
• publication_year: 2003
• publication_date: 10-12 Dec. 2003
• start_page: 310
• end_page: 311
• citing_paper_count: 0
• citing_patent_count: 0
• download_count: 155
• insert_date: 20040315
• index_terms:
  • ieee_terms:
    • Epitaxial layers
    • Photodiodes
    • Semiconductor device modeling
    • Equations
    • Semiconductor process modeling
    • Infrared image sensors
    • Image sensors
    • CMOS process
    • Wavelength measurement
    • Doping
  • dynamic_index_terms:
    • Photodiode
    • Epitaxial Layer
    • Epilayer
    • Image Pixels
    • Maximum Response
    • Image Sensor
    • Camera Sensor
    • Homogeneous Layer
    • Derivation Process
    • Visible Wavelength Range
    • Wavelengths In The Visible Range
    • Light In The Wavelength Range
    • Range Of Light Wavelengths
• isbn_formats:
  • format: Print ISBN, value: 0-7803-8139-4, isbnType: Historical
• authors:
  • Author Name: Wei-Jean Liu
    Affiliation: Dept. of Electrical Engineering, National Chung Cheng University, Chia-Yi, Taiwan
    Author URL: https://ieeexplore.ieee.org/author/37087558760
    ID: 37087558760
    Order: 1
    Author Affiliations:
    • Dept. of Electrical Engineering, National Chung Cheng University, Chia-Yi, Taiwan
  • Author Name: O.T.-C. Chen
    Affiliation: Dept. of Electrical Engineering, National Chung Cheng University, Chia-Yi, Taiwan
    Author URL: https://ieeexplore.ieee.org/author/37271445000
    ID: 37271445000
    Order: 2
    Author Affiliations:
    • Dept. of Electrical Engineering, National Chung Cheng University, Chia-Yi, Taiwan
  • Author Name: Li-Kuo Dai
    Affiliation: Solid-State Devices Materials Section, Chung-Shan Institute of Science & Technology, Tao-Yuan, Taiwan
    Author URL: https://ieeexplore.ieee.org/author/37087710441
    ID: 37087710441
    Order: 3
    Author Affiliations:
    • Solid-State Devices Materials Section, Chung-Shan Institute of Science & Technology, Tao-Yuan, Taiwan
  • Author Name: Ping-Kuo Weng
    Affiliation: Solid-State Devices Materials Section, Chung-Shan Institute of Science & Technology, Tao-Yuan, Taiwan
    Author URL: https://ieeexplore.ieee.org/author/37087269086
    ID: 37087269086
    Order: 4
    Author Affiliations:
    • Solid-State Devices Materials Section, Chung-Shan Institute of Science & Technology, Tao-Yuan, Taiwan
  • Author Name: Far-Wen Jih
    Affiliation: Solid-State Devices Materials Section, Chung-Shan Institute of Science & Technology, Tao-Yuan, Taiwan
    Author URL: https://ieeexplore.ieee.org/author/37087248596
    ID: 37087248596
    Order: 5
    Author Affiliations:
    • Solid-State Devices Materials Section, Chung-Shan Institute of Science & Technology, Tao-Yuan, Taiwan

Image Sensor

• sensor_type: CMOS
• resolution: not specified
• dynamic_range: not specified
• pixel_size: not specified
• dark_current: not specified

Optical Data

• focal_length: not specified
• aperture: not specified
• field_of_view: not specified
• distortion: not specified

Performance Metrics

Applications & Benefits

• cell_imaging: not specified
• benefits: not specified

Supporting Organizations

• supported_by: Taiwan Semiconductor Manufacturing Company (TSMC), National Chung Cheng University, Chung-Shan Institute of Science & Technology

Manuscript Details

• publication_date: 10-12 Dec. 2003

Relevancy Score

• score: 8
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise
  • cell_imaging
  • benefits

Processed JSON Filename

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