Exploration Of Pinned Photodiode Radiation Hardening Solutions Through Tcad Simulations

• doi: 10.1109/TED.2019.2922755
• title: Exploration of Pinned Photodiode Radiation Hardening Solutions Through TCAD Simulations
• publisher: IEEE
• isbn:
• issn: 1557-9646
• rank: 2434
• access_type: LOCKED
• content_type: Journals
• abstract: The use of pinned photodiode (PPD)-based CMOS image sensors (CIS) in harsh radiation environment (such as space) is limited by their tolerance to ionizing radiation. Technology computer-aided design (TCAD) simulations are performed to reproduce the radiation-induced defect and therefore the dark current increase in PPD pixels up to 1 kGy (i.e., 100 krad) of total ionizing dose (TID). To do so, the TCAD models are calibrated with measurements performed on irradiated pixels. Then, the influence on the PPD radiation hardness of various manufacturing process and pixel design modifications are explored. This work shows that the proposed modification can improve the radiation hardness of PPD CIS against ionizing.
• article_number: 8755315
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8755315
• html_url: https://ieeexplore.ieee.org/document/8755315/
• abstract_url: https://ieeexplore.ieee.org/document/8755315/
• publication_title: IEEE Transactions on Electron Devices
• conference_location:
• conference_dates:
• publication_number: 16
• is_number: 8768425
• publication_year: 2019
• publication_date: Aug. 2019
• start_page: 3411
• end_page: 3416
• citing_paper_count: 10
• citing_patent_count: 0
• download_count: 702
• insert_date: 20190703
• index_terms:
  • ieee_terms:
    • Dark current
    • Photodiodes
    • Doping
    • Radiation hardening (electronics)
    • Current measurement
    • Semiconductor process modeling
    • Radiation effects
  • author_terms:
    • CMOS
    • CMOS Image Sensors (CIS)
    • dark current
    • pinned photodiode (PPD)
    • radiation effects
    • radiation hardening
    • simulation
    • total ionizing dose (TID)
  • dynamic_index_terms:
    • Radiation Tolerance
    • Radiation-tolerant
    • Radiation Hardness
    • PIN Photodiode
    • Technology Computer-aided Design
    • Technology Computer Aided Design
    • Technology CAD
    • Ionizing Radiation
    • Ion Irradiation
    • Ion Implantation
    • Image Sensor
    • Camera Sensor
    • Dose Concentration
    • Absorbed Dose
    • Total Ionizing Dose
    • Dark Current
    • Positively Charged
    • Effects Of Radiation
    • Effects Of Radiotherapy
    • Effect Of Irradiation
    • Surface Oxidation
    • Process Flow
    • Doping Concentration
    • Set Of Techniques
    • Depletion Region
    • Space Charge Region
    • Depletion Layer
    • Depletion Zone
    • Secondary Ion Mass Spectrometry
    • Interface States
    • Interface Conditions
    • Charge Trapping
    • Charge-trapping
    • Oxide Thickness
    • Charge Concentration
    • Gate Oxide
    • Gate-oxide
    • Accumulation Regime
    • Electron Current Density
    • Oxide Interface
    • Single Gate
• authors:
  • Author Name: Olivier Marcelot
    Affiliation: ISAE, Image Sensor Research Team, Université de Toulouse, Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/37643741500
    ID: 37643741500
    Order: 1
    Author Affiliations:
    • ISAE, Image Sensor Research Team, Université de Toulouse, Toulouse, France
  • Author Name: Vincent Goiffon
    Affiliation: ISAE, Image Sensor Research Team, Université de Toulouse, Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/37593862700
    ID: 37593862700
    Order: 2
    Author Affiliations:
    • ISAE, Image Sensor Research Team, Université de Toulouse, Toulouse, France
  • Author Name: Pierre Magnan
    Affiliation: ISAE, Image Sensor Research Team, Université de Toulouse, Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/37400751600
    ID: 37400751600
    Order: 3
    Author Affiliations:
    • ISAE, Image Sensor Research Team, Université de Toulouse, Toulouse, France

Image Sensor

• sensor_type: CMOS
• resolution: Not specified
• dynamic_range: Not specified
• pixel_size: Not specified
• dark_current: 13 e−·s−1·μm−2 (after calibration)

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• noise: Dark current increased by a factor of 40 after 1 kGy irradiation.

Applications & Benefits

• cell_imaging: Applications include smartphones, scientific applications, and harsh radiation environments.
• benefits: High performance, low dark current, and enhanced charge transfer.

Supporting Organizations

• supported_by: ISAE, Université de Toulouse

Manuscript Details

• publication_date: Aug. 2019

Relevancy Score

• score: 9
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise

Processed JSON Filename

request_3333261c-4bf7-41fa-a9f0-6ac623eaddbf-exploration_of_pinned_photodiode_radiation_hardening_solutions_through_tcad_simulations.json