Enhanced Silicon Singlephoton Avalanche Diode Based On Light Trapping

• doi:
• title: Enhanced silicon single-photon avalanche diode based on light trapping
• publisher: IEEE
• isbn: 978-1-5386-5733-1
• issn:
• rank: 2398
• access_type: LOCKED
• content_type: Conferences
• abstract: We present a nano-structured light-trapping Si SPAD with improved detection efficiency, without sacrificing jitter distribution or dark count rate. The design can be adopted for CMOS-compatible SPAD image sensors and silicon photomultipliers.
• article_number: 8427916
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8427916
• html_url: https://ieeexplore.ieee.org/document/8427916/
• abstract_url: https://ieeexplore.ieee.org/document/8427916/
• publication_title: 2018 Conference on Lasers and Electro-Optics (CLEO)
• conference_location: San Jose, CA, USA
• conference_dates: 13-18 May 2018
• publication_number: 8425625
• is_number: 8426208
• publication_year: 2018
• publication_date: 13-18 May 2018
• start_page: 1
• end_page: 2
• citing_paper_count: 0
• citing_patent_count: 0
• download_count: 235
• insert_date: 20180809
• index_terms:
  • ieee_terms:
    • Silicon
    • Photonics
    • Light trapping
    • Jitter
    • Absorption
    • Surface waves
    • Image sensors
  • dynamic_index_terms:
    • Light Traps
    • Avalanche Diode
    • Single-photon Avalanche Diode
    • Single Photon Avalanche Diode
    • Silicon Single-photon Avalanche Diode
    • Silicon Photomultiplier
    • SiPM
    • Dark Count Rate
    • Nanostructured Surfaces
    • Si Layer
    • Photon Distribution
• isbn_formats:
  • format: Print on Demand(PoD) ISBN, value: 978-1-5386-5733-1, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-943580-42-2, isbnType: New-2005
• authors:
  • Author Name: Kai Zang
    Affiliation: Department of Electrical Engineering, Stanford University, Stanford, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/38490613200
    ID: 38490613200
    Order: 1
    Author Affiliations:
    • Department of Electrical Engineering, Stanford University, Stanford, CA, USA
  • Author Name: Xiao Jiang
    Affiliation: CAS center jor Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, Hejei, Anhui, China
    Author URL: https://ieeexplore.ieee.org/author/37713599100
    ID: 37713599100
    Order: 2
    Author Affiliations:
    • CAS center jor Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, Hejei, Anhui, China
  • Author Name: Yijie Huo
    Affiliation: Department of Electrical Engineering, Stanford University, Stanford, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/37606349800
    ID: 37606349800
    Order: 3
    Author Affiliations:
    • Department of Electrical Engineering, Stanford University, Stanford, CA, USA
  • Author Name: Tianzhe Zheng
    Affiliation: CAS center jor Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, Hejei, Anhui, China
    Author URL: https://ieeexplore.ieee.org/author/37088741982
    ID: 37088741982
    Order: 4
    Author Affiliations:
    • CAS center jor Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, Hejei, Anhui, China
  • Author Name: Yueyang Fei
    Affiliation: CAS center jor Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, Hejei, Anhui, China
    Author URL: https://ieeexplore.ieee.org/author/37088728255
    ID: 37088728255
    Order: 5
    Author Affiliations:
    • CAS center jor Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, Hejei, Anhui, China
  • Author Name: Xun Ding
    Affiliation: CAS center jor Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, Hejei, Anhui, China
    Author URL: https://ieeexplore.ieee.org/author/37088722982
    ID: 37088722982
    Order: 6
    Author Affiliations:
    • CAS center jor Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, Hejei, Anhui, China
  • Author Name: Matthew Morea
    Affiliation: Department of Electrical Engineering, Stanford University, Stanford, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/37085722083
    ID: 37085722083
    Order: 7
    Author Affiliations:
    • Department of Electrical Engineering, Stanford University, Stanford, CA, USA
  • Author Name: Muyu Xue
    Affiliation: Department of Materials Science and Engineering, Stanford University, Stanford, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/37085349237
    ID: 37085349237
    Order: 8
    Author Affiliations:
    • Department of Materials Science and Engineering, Stanford University, Stanford, CA, USA
  • Author Name: Ching-Ying Lu
    Affiliation: Department of Electrical Engineering, Stanford University, Stanford, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/37085355404
    ID: 37085355404
    Order: 9
    Author Affiliations:
    • Department of Electrical Engineering, Stanford University, Stanford, CA, USA
  • Author Name: Theodore I. Kamins
    Affiliation: Department of Electrical Engineering, Stanford University, Stanford, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/37313320400
    ID: 37313320400
    Order: 10
    Author Affiliations:
    • Department of Electrical Engineering, Stanford University, Stanford, CA, USA
  • Author Name: Qiang Zhang
    Affiliation: University of Science and Technology of China, Hefei, Anhui, CN
    Author URL: https://ieeexplore.ieee.org/author/37712172800
    ID: 37712172800
    Order: 11
    Author Affiliations:
    • University of Science and Technology of China, Hefei, Anhui, CN
  • Author Name: Jian-Wei Pan
    Affiliation: University of Science and Technology of China, Hefei, Anhui, CN
    Author URL: https://ieeexplore.ieee.org/author/37439028600
    ID: 37439028600
    Order: 12
    Author Affiliations:
    • University of Science and Technology of China, Hefei, Anhui, CN
  • Author Name: James S. Harris
    Affiliation: Department of Materials Science and Engineering, Stanford University, Stanford, CA, USA
    Author URL: https://ieeexplore.ieee.org/author/37276485700
    ID: 37276485700
    Order: 13
    Author Affiliations:
    • Department of Materials Science and Engineering, Stanford University, Stanford, CA, USA

Image Sensor

• sensor_type: CMOS
• resolution: not specified
• dynamic_range: not specified
• pixel_size: not specified
• dark_current: not specified

Optical Data

• focal_length: not specified
• aperture: not specified
• field_of_view: not specified
• distortion: not specified

Performance Metrics

Applications & Benefits

• cell_imaging: The research discusses enhancements in photon detection efficiency for applications in quantum science and imaging.
• benefits: Improved photon detection efficiency without sacrificing timing performance or dark count rate.

Supporting Organizations

• supported_by: Stanford University, USTC, CAS Center for Excellence in Quantum Information and Quantum Physics

Manuscript Details

• publication_date: 13-18 May 2018

Relevancy Score

• score: 9
• missing_fields:
  • resolution
  • dynamic_range
  • pixel_size
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise

Processed JSON Filename

request_7d8c826a-b8b9-4c99-849f-1409b1d69727-enhanced_silicon_singlephoton_avalanche_diode_based_on_light_trapping.json