Engineering Breakdown Probability Profile For Pdp And Dcr Optimization In A Spad Fabricated In A Standard 55 Nm Bcd Process

• doi: 10.1109/JSTQE.2021.3114346
• title: Engineering Breakdown Probability Profile for PDP and DCR Optimization in a SPAD Fabricated in a Standard 55 nm BCD Process
• publisher: IEEE
• isbn:
• issn: 1558-4542
• rank: 2390
• access_type: OPEN_ACCESS
• content_type: Journals
• abstract: CMOS single-photon avalanche diodes (SPADs) have broken into the mainstream by enabling the adoption of imaging, timing, and security technologies in a variety of applications within the consumer, medical and industrial domains. The continued scaling of technology nodes creates many benefits but also obstacles for SPAD-based systems. Maintaining and/or improving upon the high-sensitivity, low-noise, and timing performance of demonstrated SPADs in custom technologies or well-established CMOS image sensor processes remains a challenge. In this paper, we present SPADs based on DPW/BNW junctions in a standard Bipolar-CMOS-DMOS (BCD) technology with results comparable to the state-of-the-art in terms of sensitivity and noise in a deep sub-micron process. Technology CAD (TCAD) simulations demonstrate the improved PDP with the simple addition of a single existing implant, which allows for an engineered performance without modifications to the process. The result is an 8.8 $\mu$m diameter SPAD exhibiting $\sim$2.6 cps/$\mu$m$^2$ DCR at 20 $^{\circ}$C with 7 V excess bias. The improved structure obtains a PDP of 62% and $\sim$4.2% at 530 nm and 940 nm, respectively. Afterpulsing probability is $\sim$0.97% and the timing response is 52 ps FWHM when measured with integrated passive quench/active recharge circuitry at 3 V excess bias.
• article_number: 9543572
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9543572
• html_url: https://ieeexplore.ieee.org/document/9543572/
• abstract_url: https://ieeexplore.ieee.org/document/9543572/
• publication_title: IEEE Journal of Selected Topics in Quantum Electronics
• conference_location:
• conference_dates:
• publication_number: 2944
• is_number: 9497052
• publication_year: 2022
• publication_date: March-April 2022
• start_page: 1
• end_page: 10
• citing_paper_count: 30
• citing_patent_count: 0
• download_count: 4979
• insert_date: 20210921
• index_terms:
  • ieee_terms:
    • Single-photon avalanche diodes
    • Junctions
    • Electric breakdown
    • Implants
    • Doping
    • Photonics
    • Timing
  • author_terms:
    • Single-photon avalanche diodes (SPADs)
    • photon counting
    • depth-sensing
    • BCD
    • time-correlated single-photon counting(TCSPC)
    • LIDAR
    • three-dimensional (3-D) ranging
    • FLIM
    • QRNG
  • dynamic_index_terms:
    • Single-photon Avalanche Diode
    • Single Photon Avalanche Diode
    • Dark Count Rate
    • Bipolar-CMOS-DMOS Process
    • Bipolar CMOS DMOS Process
    • Variety Of Technologies
    • Technological Diversity
    • Multiple Regions
    • Detection Efficiency
    • Quantum Efficiency
    • Oscilloscope
    • Longer Wavelengths
    • Longer Wavelength
    • I-V Curves
    • Current Voltage Characteristics
    • I-V Characteristics
    • Current-voltage Characteristics
    • Space Charge
    • Space-charge
    • Depletion Region
    • Space Charge Region
    • Depletion Layer
    • Depletion Zone
    • Noise Characteristics
    • Noise Features
    • Time-correlated Single-photon Counting
    • TCSPC
    • Time-correlated Single Photon Counting
    • Thermal Power Plants
    • Thermal Generation
    • Thermal Plants
    • Fluorescence Lifetime Imaging Microscopy
    • FLIM
    • Fluorescence Lifetime Imaging
    • Band Diagram
    • Timing Jitter
    • Time-to-digital Converter
    • Device Physics
    • Doping Profile
• authors:
  • Author Name: Francesco Gramuglia
    Affiliation: Advanced Quantum Architecture Laboratory (AQUA), École Polytechnique Fédérale de Lausanne (EPFL), Neuchâtel, Switzerland
    Author URL: https://ieeexplore.ieee.org/author/37086064963
    ID: 37086064963
    Order: 1
    Author Affiliations:
    • Advanced Quantum Architecture Laboratory (AQUA), École Polytechnique Fédérale de Lausanne (EPFL), Neuchâtel, Switzerland
  • Author Name: Pouyan Keshavarzian
    Affiliation: Advanced Quantum Architecture Laboratory (AQUA), École Polytechnique Fédérale de Lausanne (EPFL), Neuchâtel, Switzerland
    Author URL: https://ieeexplore.ieee.org/author/37087240832
    ID: 37087240832
    Order: 2
    Author Affiliations:
    • Advanced Quantum Architecture Laboratory (AQUA), École Polytechnique Fédérale de Lausanne (EPFL), Neuchâtel, Switzerland
  • Author Name: Ekin Kizilkan
    Affiliation: Advanced Quantum Architecture Laboratory (AQUA), École Polytechnique Fédérale de Lausanne (EPFL), Neuchâtel, Switzerland
    Author URL: https://ieeexplore.ieee.org/author/37086345143
    ID: 37086345143
    Order: 3
    Author Affiliations:
    • Advanced Quantum Architecture Laboratory (AQUA), École Polytechnique Fédérale de Lausanne (EPFL), Neuchâtel, Switzerland
  • Author Name: Claudio Bruschini
    Affiliation: Advanced Quantum Architecture Laboratory (AQUA), École Polytechnique Fédérale de Lausanne (EPFL), Neuchâtel, Switzerland
    Author URL: https://ieeexplore.ieee.org/author/37274823200
    ID: 37274823200
    Order: 4
    Author Affiliations:
    • Advanced Quantum Architecture Laboratory (AQUA), École Polytechnique Fédérale de Lausanne (EPFL), Neuchâtel, Switzerland
  • Author Name: Shyue Seng Tan
    Affiliation: GLOBALFOUNDRIES Singapore Pte. Ltd.,, Singapore, Singapore
    Author URL: https://ieeexplore.ieee.org/author/37088993409
    ID: 37088993409
    Order: 5
    Author Affiliations:
    • GLOBALFOUNDRIES Singapore Pte. Ltd.,, Singapore, Singapore
  • Author Name: Michelle Tng
    Affiliation: GLOBALFOUNDRIES Singapore Pte. Ltd.,, Singapore, Singapore
    Author URL: https://ieeexplore.ieee.org/author/37088472552
    ID: 37088472552
    Order: 6
    Author Affiliations:
    • GLOBALFOUNDRIES Singapore Pte. Ltd.,, Singapore, Singapore
  • Author Name: Elgin Quek
    Affiliation: GLOBALFOUNDRIES Singapore Pte. Ltd.,, Singapore, Singapore
    Author URL: https://ieeexplore.ieee.org/author/37377421400
    ID: 37377421400
    Order: 7
    Author Affiliations:
    • GLOBALFOUNDRIES Singapore Pte. Ltd.,, Singapore, Singapore
  • Author Name: Myung-Jae Lee
    Affiliation: Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37598674000
    ID: 37598674000
    Order: 8
    Author Affiliations:
    • Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, South Korea
  • Author Name: Edoardo Charbon
    Affiliation: Advanced Quantum Architecture Laboratory (AQUA), École Polytechnique Fédérale de Lausanne (EPFL), Neuchâtel, Switzerland
    Author URL: https://ieeexplore.ieee.org/author/37271353200
    ID: 37271353200
    Order: 9
    Author Affiliations:
    • Advanced Quantum Architecture Laboratory (AQUA), École Polytechnique Fédérale de Lausanne (EPFL), Neuchâtel, Switzerland

Image Sensor

• sensor_type: CMOS
• resolution: 8.8 µm diameter
• dynamic_range: Not explicitly mentioned.
• pixel_size: 8.8 µm
• dark_current: ∼2.6 cps/µm² at 20°C with 7 V excess bias (DCR)

Optical Data

• focal_length: Not mentioned.
• aperture: Not mentioned.
• field_of_view: Not mentioned.
• distortion: Not mentioned.

Performance Metrics

• frame_rate: Not mentioned.
• signal_to_noise_ratio: Not mentioned.
• sensitivity: PDP of 62% at 530 nm and ∼4.2% at 940 nm.
• shutter_speed: Not mentioned.
• power_consumption: Not mentioned.
• noise: DCR of ∼2.6 cps/µm² at 7 V excess bias.

Applications & Benefits

• cell_imaging: Enables applications in fluorescence lifetime imaging microscopy (FLIM), LiDAR/Time-of-flight (ToF), and quantum random number generation (QRNG).
• benefits: High sensitivity and low noise performance suitable for various applications in consumer, medical, and industrial domains.

Supporting Organizations

• supported_by: Swiss National Science Foundation under Grant 200021-169465; Qrypt Inc.

Manuscript Details

• publication_date: March-April 2022

Relevancy Score

• score: 10

Processed JSON Filename

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