Electronic Global Shutter Cmos Image Sensor Using Oxide Semiconductor Fet
With Extremely Low Offstate Current
- doi:
-
title: Electronic global shutter CMOS image sensor
using oxide semiconductor FET with extremely low off-state current
- publisher: IEEE
- isbn: 978-4-86348-166-4
- issn: 0743-1562
- partnum: 11CH38819
- rank: 2371
- access_type: LOCKED
- content_type: Conferences
-
abstract: A novel CMOS image sensor including a pixel
with a hybrid structure of an oxide semiconductor FET (OS-FET) and
Si(SOI)-FETs has been developed. The OS-FET has an extremely low
off-state current, and thus can form a highly insulating charge storage
node in combination with SOI. We have therefore applied the OS-FET to an
electronic global shutter CMOS image sensor and confirmed improvement in
imaging quality.
- article_number: 5984691
-
pdf_url:
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5984691
-
html_url:
https://ieeexplore.ieee.org/document/5984691/
-
abstract_url:
https://ieeexplore.ieee.org/document/5984691/
-
publication_title: 2011 Symposium on VLSI Technology -
Digest of Technical Papers
- conference_location: Kyoto, Japan
- conference_dates: 14-16 June 2011
- publication_number: 5976318
- is_number: 5984315
- publication_year: 2011
- publication_date: 14-16 June 2011
- start_page: 174
- end_page: 175
- citing_paper_count: 2
- citing_patent_count: 6
- download_count: 847
- insert_date: 20110818
-
index_terms:
-
ieee_terms:
- CMOS image sensors
- Transistors
- Voltage measurement
- Leakage current
- Films
- Silicon
- Logic gates
-
dynamic_index_terms:
- Electron Tomography
- EM Images
- Electron Images
- Oxide Semiconductor
- Global Image
- Electronic Sensors
- Global Shutter
- Off-state Current
- Hybrid Structure
- Image Capture
- Rolling Shutter
-
isbn_formats:
-
format: CD,
value: 978-4-86348-166-4,
isbnType: New-2005
-
format: Print ISBN,
value: 978-1-4244-9949-6,
isbnType: New-2005
-
authors:
-
Author Name: Takeshi Aoki
Affiliation: Semiconductor Energy Laboratory
Company Limited, Atsugi, Kanagawa, Japan
Author URL:
https://ieeexplore.ieee.org/author/37962729200
ID: 37962729200
Order: 1
Author Affiliations:
-
Semiconductor Energy Laboratory Company Limited, Atsugi,
Kanagawa, Japan
-
Author Name: Masataka Ikeda
Affiliation: Semiconductor Energy Laboratory
Company Limited, Atsugi, Kanagawa, Japan
Author URL:
https://ieeexplore.ieee.org/author/37957271700
ID: 37957271700
Order: 2
Author Affiliations:
-
Semiconductor Energy Laboratory Company Limited, Atsugi,
Kanagawa, Japan
-
Author Name: Munehiro Kozuma
Affiliation: Semiconductor Energy Laboratory
Company Limited, Atsugi, Kanagawa, Japan
Author URL:
https://ieeexplore.ieee.org/author/37698366600
ID: 37698366600
Order: 3
Author Affiliations:
-
Semiconductor Energy Laboratory Company Limited, Atsugi,
Kanagawa, Japan
-
Author Name: Hikaru Tamura
Affiliation: Semiconductor Energy Laboratory
Company Limited, Atsugi, Kanagawa, Japan
Author URL:
https://ieeexplore.ieee.org/author/37960432200
ID: 37960432200
Order: 4
Author Affiliations:
-
Semiconductor Energy Laboratory Company Limited, Atsugi,
Kanagawa, Japan
-
Author Name: Yoshiyuki Kurokawa
Affiliation: Semiconductor Energy Laboratory
Company Limited, Atsugi, Kanagawa, Japan
Author URL:
https://ieeexplore.ieee.org/author/38513030700
ID: 38513030700
Order: 5
Author Affiliations:
-
Semiconductor Energy Laboratory Company Limited, Atsugi,
Kanagawa, Japan
-
Author Name: Takayuki Ikeda
Affiliation: Semiconductor Energy Laboratory
Company Limited, Atsugi, Kanagawa, Japan
Author URL:
https://ieeexplore.ieee.org/author/37694620500
ID: 37694620500
Order: 6
Author Affiliations:
-
Semiconductor Energy Laboratory Company Limited, Atsugi,
Kanagawa, Japan
-
Author Name: Yuta Endo
Affiliation: Semiconductor Energy Laboratory
Company Limited, Atsugi, Kanagawa, Japan
Author URL:
https://ieeexplore.ieee.org/author/37085831418
ID: 37085831418
Order: 7
Author Affiliations:
-
Semiconductor Energy Laboratory Company Limited, Atsugi,
Kanagawa, Japan
-
Author Name: Tetsunori Maruyama
Affiliation: Semiconductor Energy Laboratory
Company Limited, Atsugi, Kanagawa, Japan
Author URL:
https://ieeexplore.ieee.org/author/37087690204
ID: 37087690204
Order: 8
Author Affiliations:
-
Semiconductor Energy Laboratory Company Limited, Atsugi,
Kanagawa, Japan
-
Author Name: Noriko Matsumoto
Affiliation: Semiconductor Energy Laboratory
Company Limited, Atsugi, Kanagawa, Japan
Author URL:
https://ieeexplore.ieee.org/author/37954636900
ID: 37954636900
Order: 9
Author Affiliations:
-
Semiconductor Energy Laboratory Company Limited, Atsugi,
Kanagawa, Japan
-
Author Name: Yoshinori Ieda
Affiliation: Semiconductor Energy Laboratory
Company Limited, Atsugi, Kanagawa, Japan
Author URL:
https://ieeexplore.ieee.org/author/37947589300
ID: 37947589300
Order: 10
Author Affiliations:
-
Semiconductor Energy Laboratory Company Limited, Atsugi,
Kanagawa, Japan
-
Author Name: Atsuo Isobe
Affiliation: Semiconductor Energy Laboratory
Company Limited, Atsugi, Kanagawa, Japan
Author URL:
https://ieeexplore.ieee.org/author/37968173800
ID: 37968173800
Order: 11
Author Affiliations:
-
Semiconductor Energy Laboratory Company Limited, Atsugi,
Kanagawa, Japan
-
Author Name: Jun Koyama
Affiliation: Semiconductor Energy Laboratory
Company Limited, Atsugi, Kanagawa, Japan
Author URL:
https://ieeexplore.ieee.org/author/37949950900
ID: 37949950900
Order: 12
Author Affiliations:
-
Semiconductor Energy Laboratory Company Limited, Atsugi,
Kanagawa, Japan
-
Author Name: Shunpei Yamazaki
Affiliation: Semiconductor Energy Laboratory
Company Limited, Atsugi, Kanagawa, Japan
Author URL:
https://ieeexplore.ieee.org/author/37687628100
ID: 37687628100
Order: 13
Author Affiliations:
-
Semiconductor Energy Laboratory Company Limited, Atsugi,
Kanagawa, Japan
Image Sensor
- sensor_type: CMOS
- resolution: 640×480
- dynamic_range: Not specified
- pixel_size: 126 μm×126 μm
- dark_current: Not specified
Optical Data
- focal_length: Not specified
- aperture: Not specified
- field_of_view: Not specified
- distortion: Not specified
Performance Metrics
Applications & Benefits
-
cell_imaging: Global shutter application in imaging of
rotating objects
-
benefits: The hybrid structure allows for improved
charge retention and image quality, specifically in dynamic scenes.
Supporting Organizations
-
supported_by: Semiconductor Energy Laboratory Co., Ltd.
Manuscript Details
- publication_date: 14-16 June 2011
Relevancy Score
- score: 10
-
missing_fields:
- fill factor
- quantum efficiency
- other optical data
- readout speed
- temporal noise
- fixed-pattern noise
- analog-to-digital conversion techniques
- microlenses
- on-chip colour filters
- backside illumination
Processed JSON Filename
request_43cdf9f1-a5f5-4573-8185-1d1ff3b9eb08-electronic_global_shutter_cmos_image_sensor_using_oxide_semiconductor_fet_with_extremely_low_offstate_current.json