Effects Of Negativebias Operation And Optical Stress On Dark Current In Cmos Image Sensors

• doi: 10.1109/TED.2010.2049220
• title: Effects of Negative-Bias Operation and Optical Stress on Dark Current in CMOS Image Sensors
• publisher: IEEE
• isbn:
• issn: 1557-9646
• rank: 2354
• access_type: LOCKED
• content_type: Journals
• abstract: A negative-bias operation of the transfer gate has revealed a major origin of dark current defects of CMOS image sensors. Charge injection from the photodiode to the substrate at the negative-bias operation has been avoided by an improved well structure. A strong visible light has been observed to cause damage with an increase in the dark current under the normal operating condition, and the damage has been annealed in the power-off mode. This indicates that the strong light possibly causes a threshold voltage shift, which is explained by the photon-assisted tunneling or emission mechanisms. Multiple stress-and-anneal cycles have been found to cause an optical hardening effect, which can be explained by immobile trapped holes.
• article_number: 5467174
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5467174
• html_url: https://ieeexplore.ieee.org/document/5467174/
• abstract_url: https://ieeexplore.ieee.org/document/5467174/
• publication_title: IEEE Transactions on Electron Devices
• conference_location:
• conference_dates:
• publication_number: 16
• is_number: 5491381
• publication_year: 2010
• publication_date: July 2010
• start_page: 1512
• end_page: 1518
• citing_paper_count: 25
• citing_patent_count: 1
• download_count: 1335
• insert_date: 20100520
• index_terms:
  • ieee_terms:
    • Annealing
    • Optical sensors
    • Photonics
    • Optical imaging
    • Dark current
    • Stress
    • Pixel
  • author_terms:
    • CMOS image sensor (CIS)
    • dark current
    • negative bias
    • optical stress
    • tunneling
  • dynamic_index_terms:
    • Dark Current
    • Visible Light
    • Visible Region
    • Visible Spectrum
    • Current Increases
    • Strong Light
    • Charge Injection
    • Hole Trapping
    • Positive Bias
    • Positive Consequences
    • Positive Events
    • Integration Time
    • Surface Potential
    • Valence Band
    • Negative Bias
    • Negative Shift
    • Gate Oxide
    • Generate Electron Hole Pairs
    • Generation Of Electron-hole Pairs
    • Dark Signal
    • Sensor Pixel
• authors:
  • Author Name: Takashi Watanabe
    Affiliation: Brookman Technology, Inc., Hamamatsu, Japan
    Author URL: https://ieeexplore.ieee.org/author/37068458100
    ID: 37068458100
    Order: 1
    Author Affiliations:
    • Brookman Technology, Inc., Hamamatsu, Japan
  • Author Name: Jong-Ho Park
    Affiliation: Brookman Technology, Inc., Hamamatsu, Japan
    Author URL: https://ieeexplore.ieee.org/author/37085661138
    ID: 37085661138
    Order: 2
    Author Affiliations:
    • Brookman Technology, Inc., Hamamatsu, Japan
  • Author Name: Satoshi Aoyama
    Affiliation: Brookman Technology, Inc., Hamamatsu, Japan
    Author URL: https://ieeexplore.ieee.org/author/37408090900
    ID: 37408090900
    Order: 3
    Author Affiliations:
    • Brookman Technology, Inc., Hamamatsu, Japan
  • Author Name: Keigo Isobe
    Affiliation: Brookman Technology, Inc., Hamamatsu, Japan
    Author URL: https://ieeexplore.ieee.org/author/37409394900
    ID: 37409394900
    Order: 4
    Author Affiliations:
    • Brookman Technology, Inc., Hamamatsu, Japan
  • Author Name: Shoji Kawahito
    Affiliation: Research Institute of Electronics, Shizuoka University, Hamamatsu, Japan
    Author URL: https://ieeexplore.ieee.org/author/37300195700
    ID: 37300195700
    Order: 5
    Author Affiliations:
    • Research Institute of Electronics, Shizuoka University, Hamamatsu, Japan

Image Sensor

• sensor_type: CMOS
• resolution: 640(H) × 428(V)
• dynamic_range: 71dB
• pixel_size: 5.6 μm
• dark_current: < 0.1 e-

Optical Data

• focal_length: not specified
• aperture: not specified
• field_of_view: not specified
• distortion: not specified

Performance Metrics

• noise: 4.7 e- (read noise)

Applications & Benefits

• cell_imaging: Applications include digital imaging in smartphones, medical devices, and automotive systems.
• benefits: Enables low dark current and true correlated double-sampling operation.

Supporting Organizations

• supported_by: Brookman Technology, Inc.

Manuscript Details

• publication_date: July 2010

Relevancy Score

• score: 9
• missing_fields:
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption

Processed JSON Filename

request_2c9bf4a4-59fa-4e46-8545-a78d748c8fc5-effects_of_negativebias_operation_and_optical_stress_on_dark_current_in_cmos_image_sensors.json