Effect Of High Energy Implantation On The Photoresist For Smaller Size Cmos Image Sensor

• doi: 10.1109/CSTIC55103.2022.9856751
• title: Effect of High Energy Implantation on the Photoresist for Smaller Size CMOS Image Sensor
• publisher: IEEE
• isbn: 978-1-6654-9759-6
• issn:
• rank: 2346
• access_type: LOCKED
• content_type: Conferences
• abstract: High energy implantation has become a key process to form n- and p-type well structures in small size CMOS image sensors (CIS) for higher full well capacity (FWC) purpose. However, high energy application needs relatively thicker photo-resist (PR) above 3µm in thickness than conventional ion implantation process depending on the ion energy and ion dosages. This thick PR will shrink during the ion implantation, which contribute additional side effect on the PR critical dimension and PR effective thickness to against next implantation step. Such effect will has an impact on the CIS performance, especially on smaller pixel products. To study the effect of high energy implantation on the PR for small size CIS, the shrinkage behavior of 3µm PR under different implantation energy and dosages was investigated in this work.
• article_number: 9856751
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9856751
• html_url: https://ieeexplore.ieee.org/document/9856751/
• abstract_url: https://ieeexplore.ieee.org/document/9856751/
• publication_title: 2022 China Semiconductor Technology International Conference (CSTIC)
• conference_location: Shanghai, China
• conference_dates: 20-21 June 2022
• publication_number: 9856647
• is_number: 9856709
• publication_year: 2022
• publication_date: 20-21 June 2022
• start_page: 1
• end_page: 3
• citing_paper_count: 0
• citing_patent_count: 0
• download_count: 499
• insert_date: 20220823
• index_terms:
  • ieee_terms:
    • Ion implantation
    • Correlation
    • Resists
    • CMOS image sensors
    • Ions
    • Behavioral sciences
  • dynamic_index_terms:
    • Image Sensor
    • Camera Sensor
    • High-energy Implantation
    • Ionizing Radiation
    • Ion Irradiation
    • Ion Implantation
    • Ionization Energy
    • Ionization Potential
    • Critical Thickness
    • Small Pixel
    • Total Work
• isbn_formats:
  • format: Print on Demand(PoD) ISBN, value: 978-1-6654-9759-6, isbnType: New-2005
  • format: USB ISBN, value: 978-1-6654-9757-2, isbnType: New-2005
  • format: Electronic ISBN, value: 978-1-6654-9758-9, isbnType: New-2005
• authors:
  • Author Name: Hui Chen
    Affiliation: Shanghai Huali Microelectronics Corporation, Shanghai, China
    Author URL: https://ieeexplore.ieee.org/author/37088899837
    ID: 37088899837
    Order: 1
    Author Affiliations:
    • Shanghai Huali Microelectronics Corporation, Shanghai, China
  • Author Name: Xiaoyu Li
    Affiliation: Shanghai Huali Microelectronics Corporation, Shanghai, China
    Author URL: https://ieeexplore.ieee.org/author/37088900960
    ID: 37088900960
    Order: 2
    Author Affiliations:
    • Shanghai Huali Microelectronics Corporation, Shanghai, China
  • Author Name: Zhengying Wei
    Affiliation: Shanghai Huali Microelectronics Corporation, Shanghai, China
    Author URL: https://ieeexplore.ieee.org/author/37086097203
    ID: 37086097203
    Order: 3
    Author Affiliations:
    • Shanghai Huali Microelectronics Corporation, Shanghai, China
  • Author Name: Chang Sun
    Affiliation: Shanghai Huali Microelectronics Corporation, Shanghai, China
    Author URL: https://ieeexplore.ieee.org/author/37086094297
    ID: 37086094297
    Order: 4
    Author Affiliations:
    • Shanghai Huali Microelectronics Corporation, Shanghai, China
  • Author Name: Jiong Xu
    Affiliation: Shanghai Huali Microelectronics Corporation, Shanghai, China
    Author URL: https://ieeexplore.ieee.org/author/37088901479
    ID: 37088901479
    Order: 5
    Author Affiliations:
    • Shanghai Huali Microelectronics Corporation, Shanghai, China
  • Author Name: Yufei Peng
    Affiliation: Shanghai Huali Microelectronics Corporation, Shanghai, China
    Author URL: https://ieeexplore.ieee.org/author/37086387072
    ID: 37086387072
    Order: 6
    Author Affiliations:
    • Shanghai Huali Microelectronics Corporation, Shanghai, China

Image Sensor

• sensor_type: CMOS
• resolution: Not specified in the text
• dynamic_range: Not specified in the text
• pixel_size: < 0.7 µm
• dark_current: Not specified in the text

Optical Data

• focal_length: Not specified in the text
• aperture: Not specified in the text
• field_of_view: Not specified in the text
• distortion: Not specified in the text

Performance Metrics

• frame_rate: Not specified in the text
• signal_to_noise_ratio: Not specified in the text
• sensitivity: Not specified in the text
• shutter_speed: Not specified in the text
• power_consumption: Not specified in the text
• noise: Not specified in the text

Applications & Benefits

• cell_imaging: The research primarily focuses on CMOS image sensors to improve full well capacity (FWC) for smaller pixel sizes in digital imaging applications.
• benefits: Improved FWC performance by influencing photoresist (PR) shrinkage during high energy implantation.

Supporting Organizations

• supported_by: Shanghai Huali Microelectronics Corporation

Manuscript Details

• publication_date: 20-21 June 2022

Relevancy Score

• score: 9
• missing_fields:
  • resolution
  • dynamic_range
  • dark_current
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise

Processed JSON Filename

request_1fb598c8-4832-4793-8878-f271108f23d1-effect_of_high_energy_implantation_on_the_photoresist_for_smaller_size_cmos_image_sensor.json