Effect And Limitation Of Pinned Photodiode

• doi: 10.1109/TED.2015.2433532
• title: Effect and Limitation of Pinned Photodiode
• publisher: IEEE
• isbn:
• issn: 1557-9646
• rank: 2343
• access_type: LOCKED
• content_type: Journals
• abstract: The pinned photodiode (PPD) is the primary technology for image sensors and used in almost all charge-coupled device image sensors and CMOS image sensors. This paper discusses the effect and limitation of PPD, especially dark current and electronic shuttering. Even when the PPD is used and silicon surface is neutralized, the proposed model explains that generation-recombination (GR) centers at the silicon surface contribute the dark current. The temperature dependence is an activation type with activation energy, Eg, not Eg/2 . The model sheds light on the importance of GR center reduction for dark current decrease even at PPD. It is also noted that the vertical overflow drain shutter combined with the PPD has potential of high-speed shuttering with small skew.
• article_number: 7118147
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7118147
• html_url: https://ieeexplore.ieee.org/document/7118147/
• abstract_url: https://ieeexplore.ieee.org/document/7118147/
• publication_title: IEEE Transactions on Electron Devices
• conference_location:
• conference_dates:
• publication_number: 16
• is_number: 7365508
• publication_year: 2016
• publication_date: Jan. 2016
• start_page: 10
• end_page: 15
• citing_paper_count: 30
• citing_patent_count: 0
• download_count: 2317
• insert_date: 20150604
• index_terms:
  • ieee_terms:
    • Dark current
    • Electric potential
    • Substrates
    • Silicon
    • Capacitance
    • Photodiodes
    • Image sensors
  • author_terms:
    • Dark current
    • image sensor
    • lag
    • noise
    • pinned photodiode (PPD)
    • shutter
    • vertical overflow drain (VOD).
    • Dark current
    • image sensor
    • lag
    • noise
    • pinned photodiode (PPD)
    • shutter
    • vertical overflow drain (VOD)
  • dynamic_index_terms:
    • PIN Photodiode
    • Activation Energy
    • Temperature Dependence
    • Image Sensor
    • Camera Sensor
    • Dark Current
    • Silicon Surface
    • Pixel Size
    • Dotted Lines
    • Image Area
    • Recombination Rate
    • High-speed Camera
    • Resistant Parasites
    • Depletion Region
    • Space Charge Region
    • Depletion Layer
    • Depletion Zone
    • Potential Profile
    • P-n Junction
    • Inductive Load
    • Load Capacitance
    • Dead Zone
    • Neutral Regions
    • Low Dark Current
    • Diffusion Current
    • Intrinsic Density
• authors:
  • Author Name: Nobukazu Teranishi
    Affiliation: Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kobe, Japan
    Author URL: https://ieeexplore.ieee.org/author/37351891200
    ID: 37351891200
    Order: 1
    Author Affiliations:
    • Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kobe, Japan
    • Research Institute of Electronics, Shizuoka University, 432-8011, Japan

Image Sensor

• sensor_type: CMOS
• resolution: Not specified
• dynamic_range: Not specified
• pixel_size: 1.12 μm
• dark_current: 5.6 e-/s/μm² at 60 °C for front-side-illumination PPD CMOS image sensor (from reference)

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• noise: Fixed Pattern Noise (FPN) significantly suppressed

Applications & Benefits

• cell_imaging: Used in image sensors with low noise, high sensitivity, and electric shutter
• benefits: No image lag, low noise, low dark current, high sensitivity, realization of electric shutter

Supporting Organizations

• supported_by: Not specified

Manuscript Details

• publication_date: Jan. 2016

Relevancy Score

• score: 9
• missing_fields:
  • resolution
  • dynamic_range
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise

Processed JSON Filename

request_52e8ea08-3f6a-4e21-956f-68019230432c-effect_and_limitation_of_pinned_photodiode.json