Doping Engineering For Pdp Optimization In Spads Implemented In 55Nm Bcd Process

• doi: 10.1109/JSTQE.2024.3351676
• title: Doping Engineering for PDP Optimization in SPADs Implemented in 55-nm BCD Process
• publisher: IEEE
• isbn:
• issn: 1558-4542
• rank: 2313
• access_type: CCBY - IEEE is not the copyright holder of this material. Please follow the instructions via https://creativecommons.org/licenses/by/4.0/ to obtain full-text articles and stipulations in the API documentation.
• content_type: Journals
• abstract: We introduce a new family of single-photon avalanche diodes (SPADs) with enhanced depletion regions in a 55-nm Bipolar-CMOS-DMOS (BCD) technology. We demonstrate how to systematically engineer doping profiles in the main junction and in deep p-well layers to achieve high sensitivity and low timing jitter. A family of sub 10 $\mu$m SPADs was designed and fully characterized. With the increase of the well-defined depletion region, the breakdown voltages of three variants are 17.1, 20.6, and 23.0 V, respectively, the peak PDP wavelengths are 450 nm, 540 nm, and 640 nm, respectively. The timing jitter below 50 ps (FWHM) at 5 V excess bias voltage are achieved in SPAD1 and SPAD2. SPAD3 shows a high PDP over a wide spectral range, with a peak PDP of 41.3% at 640 nm, and 22.3% at 850 nm, and the timing jitter 96 ps at 3 V excess bias voltage. The proposed SPADs are suitable to low-pitch, large-format image sensors for high-speed, time-resolved applications and quantum imaging.
• article_number: 10384687
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10384687
• html_url: https://ieeexplore.ieee.org/document/10384687/
• abstract_url: https://ieeexplore.ieee.org/document/10384687/
• publication_title: IEEE Journal of Selected Topics in Quantum Electronics
• conference_location:
• conference_dates:
• publication_number: 2944
• is_number: 10363134
• publication_year: 2024
• publication_date: Jan.-Feb. 2024
• start_page: 1
• end_page: 7
• citing_paper_count: 3
• citing_patent_count: 0
• download_count: 1080
• insert_date: 20240109
• index_terms:
  • ieee_terms:
    • Single-photon avalanche diodes
    • Temperature measurement
    • Junctions
    • Doping
    • Timing jitter
    • Photonics
    • Lenses
    • CMOS technology
    • Bipolar integrated circuits
  • author_terms:
    • Single-photon avalanche diode (SPAD)
    • Bipolar-CMOS-DMOS (BCD)
    • doping engineering
    • single-photon imaging
    • quantum imaging
  • dynamic_index_terms:
    • Single-photon Avalanche Diode
    • Bipolar-CMOS-DMOS Process
    • Depletion Region
    • Space Charge Region
    • Depletion Layer
    • Depletion Zone
    • Wide Spectral Range
    • Timing Jitter
    • Avalanche Diode
    • Quantum State Tomography
    • Quantum Process Tomography
    • Quantum Image
    • Quantum Tomography
    • Doping Profile
    • Low Jitter
    • Activation Energy
    • Temperature Dependence
    • I-V Curves
    • Current Voltage Characteristics
    • I-V Characteristics
    • Temperature Coefficient
    • Fill Factor
    • Function Of Voltage
    • CMOS Technology
    • Photo-generated Carriers
    • Microlenses
    • Micro Lens
    • High Fill Factor
    • Dark Count Rate
• authors:
  • Author Name: Feng Liu
    Affiliation: Advanced Quantum Architecture Laboratory (AQUA), École Polytechnique Fédérale de Lausanne (EPFL), Neuchâtel, Switzerland
    Author URL: https://ieeexplore.ieee.org/author/37275918900
    ID: 37275918900
    Order: 1
    Author Affiliations:
    • Advanced Quantum Architecture Laboratory (AQUA), École Polytechnique Fédérale de Lausanne (EPFL), Neuchâtel, Switzerland
  • Author Name: Claudio Bruschini
    Affiliation: Advanced Quantum Architecture Laboratory (AQUA), École Polytechnique Fédérale de Lausanne (EPFL), Neuchâtel, Switzerland
    Author URL: https://ieeexplore.ieee.org/author/37274823200
    ID: 37274823200
    Order: 2
    Author Affiliations:
    • Advanced Quantum Architecture Laboratory (AQUA), École Polytechnique Fédérale de Lausanne (EPFL), Neuchâtel, Switzerland
  • Author Name: Eng-Huat Toh
    Affiliation: GlobalFoundries Singapore Pte., Ltd., Singapore
    Author URL: https://ieeexplore.ieee.org/author/37293849900
    ID: 37293849900
    Order: 3
    Author Affiliations:
    • GlobalFoundries Singapore Pte., Ltd., Singapore
  • Author Name: Ping Zheng
    Affiliation: GlobalFoundries Singapore Pte., Ltd., Singapore
    Author URL: https://ieeexplore.ieee.org/author/37088572322
    ID: 37088572322
    Order: 4
    Author Affiliations:
    • GlobalFoundries Singapore Pte., Ltd., Singapore
  • Author Name: Yongshun Sun
    Affiliation: GlobalFoundries Singapore Pte., Ltd., Singapore
    Author URL: https://ieeexplore.ieee.org/author/37087366028
    ID: 37087366028
    Order: 5
    Author Affiliations:
    • GlobalFoundries Singapore Pte., Ltd., Singapore
  • Author Name: Vinit Dhulla
    Affiliation: GlobalFoundries Singapore Pte., Ltd., Singapore
    Author URL: https://ieeexplore.ieee.org/author/37714054800
    ID: 37714054800
    Order: 6
    Author Affiliations:
    • GlobalFoundries Singapore Pte., Ltd., Singapore
  • Author Name: Elgin Quek
    Affiliation: GlobalFoundries Singapore Pte., Ltd., Singapore
    Author URL: https://ieeexplore.ieee.org/author/37377421400
    ID: 37377421400
    Order: 7
    Author Affiliations:
    • GlobalFoundries Singapore Pte., Ltd., Singapore
  • Author Name: Myung-Jae Lee
    Affiliation: Post-Silicon Semiconductor Institute (PSI), Korea Institute of Science and Technology (KIST), Seoul, South Korea
    Author URL: https://ieeexplore.ieee.org/author/37598674000
    ID: 37598674000
    Order: 8
    Author Affiliations:
    • Post-Silicon Semiconductor Institute (PSI), Korea Institute of Science and Technology (KIST), Seoul, South Korea
  • Author Name: Edoardo Charbon
    Affiliation: Advanced Quantum Architecture Laboratory (AQUA), École Polytechnique Fédérale de Lausanne (EPFL), Neuchâtel, Switzerland
    Author URL: https://ieeexplore.ieee.org/author/37271353200
    ID: 37271353200
    Order: 9
    Author Affiliations:
    • Advanced Quantum Architecture Laboratory (AQUA), École Polytechnique Fédérale de Lausanne (EPFL), Neuchâtel, Switzerland

Image Sensor

• sensor_type: CMOS
• resolution: Not specified
• dynamic_range: Not specified
• pixel_size: 8.5 µm (pitch)
• dark_current: In the pA range for all three variants

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• noise: Not explicitly stated

Applications & Benefits

• cell_imaging: Biomedical imaging applications
• benefits: Suitable for low-pitch, large-format image sensors for high-speed, time-resolved applications and quantum imaging.

Supporting Organizations

• supported_by: GlobalFoundries Singapore Pte., Ltd.

Manuscript Details

• publication_date: Jan.-Feb. 2024

Relevancy Score

• score: 9
• missing_fields:
  • resolution
  • dynamic_range
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption
  • noise

Processed JSON Filename

request_3853d0ed-d98a-4db9-8b27-a7ca915c2b68-doping_engineering_for_pdp_optimization_in_spads_implemented_in_55nm_bcd_process.json