Displacement Damage Effects Due To Neutron And Proton Irradiations On Cmos Image Sensors Manufactured In Deep Submicron Technology

• doi: 10.1109/TNS.2010.2085448
• title: Displacement Damage Effects Due to Neutron and Proton Irradiations on CMOS Image Sensors Manufactured in Deep Submicron Technology
• publisher: IEEE
• isbn:
• issn: 1558-1578
• rank: 2305
• access_type: LOCKED
• content_type: Journals
• abstract: Displacement damage effects due to proton and neutron irradiations of CMOS image sensors dedicated to imaging are presented through the analysis of the dark current behavior in pixel arrays and isolated photodiodes. The mean dark current increase and the dark current nonuniformity are investigated. Dark current histogram observations are compared to damage energy distributions based on GEANT 4 calculations. We also discuss, through annealing analysis, which defects could be responsible for the dark current in CMOS image sensors.
• article_number: 5658069
• pdf_url: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5658069
• html_url: https://ieeexplore.ieee.org/document/5658069/
• abstract_url: https://ieeexplore.ieee.org/document/5658069/
• publication_title: IEEE Transactions on Nuclear Science
• conference_location:
• conference_dates:
• publication_number: 23
• is_number: 5657993
• publication_year: 2010
• publication_date: Dec. 2010
• start_page: 3101
• end_page: 3108
• citing_paper_count: 46
• citing_patent_count: 0
• download_count: 1487
• insert_date: 20101213
• index_terms:
  • ieee_terms:
    • Active pixel sensors
    • CMOS image sensors
    • Ionization
    • Dark current
  • author_terms:
    • Active pixel sensor (APS)
    • CMOS image sensor (CIS)
    • displacement damage
    • hot pixels
    • ionization
    • monolithic active pixel sensor (MAPS)
    • non-ionizing energy loss (NIEL)
  • dynamic_index_terms:
    • Neutron Irradiation
    • Neutron Radiation
    • Displacement Damage
    • Deep Submicron
    • Submicron Technology
    • Dark Current
    • Pixel Array
    • Activation Energy
    • Perimeter
    • Probability Density Function
    • Effect Of Ions
    • Space Charge
    • Dose Concentration
    • Absorbed Dose
    • Total Ionizing Dose
    • Point Defects
    • Secondary Ion Mass Spectrometry
    • Interface States
    • Interface Conditions
    • Displacement Effect
    • Displacement Events
    • Discrete Random Variable
    • Linear Energy Transfer
    • Mean Gaussian
    • Electric Field Enhancement
    • Ray Irradiation
    • Ray Radiation
    • Defect Clusters
    • Inelastic Collisions
    • Inelastic Interactions
    • Dark Signal
    • Average Number Of Events
    • Bulk Silicon
    • Dark Energy
    • Current Distribution
    • Temperature Step
    • Space Applications
• authors:
  • Author Name: Cedric Virmontois
    Affiliation: Universite de Toulouse, UPS, Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/38327725000
    ID: 38327725000
    Order: 1
    Author Affiliations:
    • Universite de Toulouse, UPS, Toulouse, France
  • Author Name: Vincent Goiffon
    Affiliation: Universite de Toulouse, UPS, Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/37593862700
    ID: 37593862700
    Order: 2
    Author Affiliations:
    • Universite de Toulouse, UPS, Toulouse, France
  • Author Name: Pierre Magnan
    Affiliation: Universite de Toulouse, UPS, Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/37400751600
    ID: 37400751600
    Order: 3
    Author Affiliations:
    • Universite de Toulouse, UPS, Toulouse, France
  • Author Name: Sylvain Girard
    Affiliation: CEA, DAM, DIF, Arpajon, France
    Author URL: https://ieeexplore.ieee.org/author/37272737300
    ID: 37272737300
    Order: 4
    Author Affiliations:
    • CEA, DAM, DIF, Arpajon, France
  • Author Name: Christophe Inguimbert
    Affiliation: ONERA/DESP, Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/37267732100
    ID: 37267732100
    Order: 5
    Author Affiliations:
    • ONERA/DESP, Toulouse, France
  • Author Name: Sophie Petit
    Affiliation: CNES, Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/37587030900
    ID: 37587030900
    Order: 6
    Author Affiliations:
    • CNES, Toulouse, France
  • Author Name: Guy Rolland
    Affiliation: CNES, Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/37424863500
    ID: 37424863500
    Order: 7
    Author Affiliations:
    • CNES, Toulouse, France
  • Author Name: Olivier Saint-Pe
    Affiliation: EADS Astrium GmbH, Toulouse, France
    Author URL: https://ieeexplore.ieee.org/author/38274783700
    ID: 38274783700
    Order: 8
    Author Affiliations:
    • EADS Astrium GmbH, Toulouse, France

Image Sensor

• sensor_type: CMOS image sensor (CIS)
• resolution: 128x128 pixels
• dynamic_range: Not specified
• pixel_size: Not specified
• dark_current: Increases significantly due to displacement damage effects after radiation exposure, specific values not provided in the text because of a focus on the increase rather than absolute numbers.

Optical Data

• focal_length: Not specified
• aperture: Not specified
• field_of_view: Not specified
• distortion: Not specified

Performance Metrics

• noise: Sent to be affected by displacement damage meaning an increase in dark current can affect noise but specific values not mentioned.

Applications & Benefits

• cell_imaging: Dedicated to imaging applications, particularly in space environments where radiation effects are significant.
• benefits: Enabled by studies focusing on radiation-induced damage and defect analysis for better performance in harsh conditions.

Supporting Organizations

• supported_by: Supported by EADS Astrium, CNES, and ONERA among others.

Manuscript Details

• publication_date: Dec. 2010

Relevancy Score

• score: 9
• missing_fields:
  • dynamic_range
  • pixel_size
  • focal_length
  • aperture
  • field_of_view
  • distortion
  • frame_rate
  • signal_to_noise_ratio
  • sensitivity
  • shutter_speed
  • power_consumption

Processed JSON Filename

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